Inventor · disambiguated record
Bor-Wen Chan
Also filed as: CHAN BOR-WEN
32 granted patents·5 pending applications·1,129 citations·filing 1999–2016
97Inventor score
Files withTAIWAN SEMICONDUCTOR MFG25CHAN BOR-WEN3LEE TAN-CHEN2TAIWAN SEMICONDUCTOR MFG CO LTD2HSIEH BOR CHIUAN1
Top patents by PatentIndex Score
37 records- 0198US7354847B2Method of trimming technologyTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Apr 8, 2008·528 cites·37 claims
- 0296US6110837AMethod for forming a hard mask of half critical dimensionWORLDWIDE SEMICONDUCTOR MANUFA·Filed 1999·Granted Aug 29, 2000·240 cites·16 claims
- 0389US8093117B2Method of forming a metal gateTSAU HSUEH WEN·Filed 2010·Granted Jan 10, 2012·11 cites·20 claims
- 0484US6764903B1Dual hard mask layer patterning methodTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Jul 20, 2004·32 cites·20 claims
- 0583US8513107B2Replacement gate FinFET devices and methods for forming the sameCHAN BOR-WEN·Filed 2010·Granted Aug 20, 2013·8 cites·17 claims
- 0682US6440875B1Masking layer method for forming a spacer layer with enhanced linewidth controlTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Aug 27, 2002·33 cites·14 claims
- 0779US8299508B2CMOS structure with multiple spacersHSIEH BOR CHIUAN·Filed 2010·Granted Oct 30, 2012·9 cites·20 claims
- 0878US8173540B2Methods of forming silicide regions and resulting MOS devicesLEE TAN-CHEN·Filed 2010·Granted May 8, 2012·4 cites·20 claims
- 0978US6656796B2Multiple etch method for fabricating split gate field effect transistor (FET) deviceTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Dec 2, 2003·30 cites·14 claims
- 1077US8357603B2Metal gate fill and method of makingTAIWAN SEMICONDUCTOR MFG·Filed 2009·Granted Jan 22, 2013·6 cites·20 claims
- 1177US7195969B2Strained channel CMOS device with fully silicided gate electrodeTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Mar 27, 2007·23 cites·21 claims
- 1275US7122484B2Process for removing organic materials during formation of a metal interconnectTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Oct 17, 2006·19 cites·31 claims
- 1374US7081413B2Method and structure for ultra narrow gateTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Jul 25, 2006·16 cites·16 claims
- 1473US6503848B1Method of forming a smooth polysilicon surface using a soft etch to enlarge the photo lithography windowTAIWAN SEMICONDUCTOR MFG·Filed 2001·Granted Jan 7, 2003·15 cites·21 claims
- 1572US6706591B1Method of forming a stacked capacitor structure with increased surface area for a DRAM deviceTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Mar 16, 2004·15 cites·27 claims
- 1667US6399286B1Method of fabricating reduced critical dimension for conductive line and spaceTAIWAN SEMICONDUCTOR MFG CORP·Filed 1999·Granted Jun 4, 2002·33 cites·21 claims
- 1767US6232175B1Method of manufacturing double-recess crown-shaped DRAM capacitorTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted May 15, 2001·32 cites·8 claims
- 1864US6352919B1Method of fabricating a borderless viaTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Mar 5, 2002·12 cites·19 claims
- 1963US8564072B2Semiconductor device having a blocking structure and method of manufacturing the sameCHAN BOR-WEN·Filed 2010·Granted Oct 22, 2013·1 cites·20 claims
- 2062US8841192B2Methods of forming silicide regions and resulting MOS devicesLEE TAN-CHEN·Filed 2012·Granted Sep 23, 2014·1 cites·35 claims
- 2162US6828237B1Sidewall polymer deposition method for forming a patterned microelectronic layerTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Dec 7, 2004·8 cites·20 claims
- 2261US6812044B2Advanced control for plasma processTAIWAN SEMICONDUCTOR MFG·Filed 2002·Granted Nov 2, 2004·7 cites·11 claims
- 2360US7241674B2Method of forming silicided gate structureTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Jul 10, 2007·7 cites·18 claims
- 2457US9899494B2Methods of forming silicide regions and resulting MOS devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2014·Granted Feb 20, 2018·0 cites·20 claims
- 2556US9947758B2Forming silicide regions and resulting MOS devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Apr 17, 2018·0 cites·20 claims
- 2656US8785313B2Method of manufacturing device having a blocking structureTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jul 22, 2014·0 cites·19 claims
- 2756US6291312B1Method for forming pullback opening above shallow trenc isolation structureTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Sep 18, 2001·20 cites·15 claims
- 2856US6218244B1Method of fabricating transistorTAIWAN SEMICONDUCTOR MFG·Filed 2000·Granted Apr 17, 2001·7 cites·14 claims
- 2952US7067391B2Method to form a metal silicide gate deviceTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Jun 27, 2006·6 cites·18 claims
- 3048US2007222000A1Method of forming silicided gate structureTAIWAN SEMICONDUCTOR MFG·Filed 2007·Application pending·0 cites
- 3148US2007296052A1Methods of forming silicide regions and resulting MOS devicesTAIWAN SEMICONDUCTOR MFG·Filed 2006·Application pending·0 cites
- 3246US7202172B2Microelectronic device having disposable spacerTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted Apr 10, 2007·2 cites·36 claims
- 3346US7023042B2Method of forming a stacked capacitor structure with increased surface area for a DRAM deviceTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted Apr 4, 2006·2 cites·8 claims
- 3437US2004214448A1Method of ashing a photoresistTAIWAN SEMICONDUCTOR MFG·Filed 2003·Application pending·0 cites
- 3535US2004266115A1Method of making a gate electrode on a semiconductor deviceFiled 2003·Application pending·0 cites
- 3632US6713398B2Method of planarizing polysillicon plugTAIWAN SEMICONDUCTOR MFG·Filed 1999·Granted Mar 30, 2004·2 cites·13 claims
- 3729US2006040481A1Methods and structures for preventing gate salicidation and for forming source and drain salicidation and for forming semiconductor deviceCHAN BOR-WEN·Filed 2004·Application pending·0 cites
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