Inventor · disambiguated record
Chung-Yen Chou
Also filed as: CHOU CHUNG-YEN
79 granted patents·3 pending applications·300 citations·filing 2003–2025
99Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD64TAIWAN SEMICONDUCTOR MFG9CHANGXIN MEMORY TECH INC3CHOU CHUNG-YEN2FUJIAN JINHUA INTEGRATED CIRCUIT CO LTD1
Top patents by PatentIndex Score
82 records- 0199US9431603B1RRAM deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 30, 2016·61 cites·20 claims
- 0298US9653682B1Resistive random access memory structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted May 16, 2017·22 cites·20 claims
- 0397US11581484B2Semiconductor structure, electrode structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Feb 14, 2023·2 cites·20 claims
- 0497US9711713B1Semiconductor structure, electrode structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Jul 18, 2017·14 cites·18 claims
- 0596US10049890B2Semiconductor structure and method of manufacturing the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Aug 14, 2018·15 cites·20 claims
- 0696US9853091B2Side bottom contact RRAM structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Dec 26, 2017·16 cites·20 claims
- 0795US10614948B2Method for forming inductor structure with magnetic materialTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 7, 2020·3 cites·20 claims
- 0894US9738516B2Structure to reduce backside silicon damageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Aug 22, 2017·9 cites·20 claims
- 0994US9219109B2Inductor structure with magnetic materialTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Dec 22, 2015·4 cites·20 claims
- 1093US10509169B2Semiconductor structure and manufacturing method of the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 17, 2019·8 cites·20 claims
- 1193US9159723B2Method for manufacturing semiconductor device and semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Oct 13, 2015·22 cites·19 claims
- 1292US8643074B2Semiconductor devicePAI CHIH-YANG·Filed 2012·Granted Feb 4, 2014·17 cites·20 claims
- 1391US9224615B2Noble gas bombardment to reduce scallops in bosch etchingTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Dec 29, 2015·12 cites·20 claims
- 1489US8928120B1Wafer edge protection structureTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Jan 6, 2015·8 cites·20 claims
- 1588US11088323B2Top electrode last scheme for memory cell to prevent metal redepositTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Aug 10, 2021·6 cites·20 claims
- 1688US9048128B2Inductor structure with magnetic materialTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Jun 2, 2015·4 cites·20 claims
- 1788US8759193B2Method of fabricating semiconductor deviceTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Jun 24, 2014·6 cites·20 claims
- 1887US10158073B2Manufacturing method of semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 18, 2018·4 cites·20 claims
- 1987US10138118B2Structure to reduce backside silicon damageTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 27, 2018·3 cites·20 claims
- 2087US9105759B2Capacitive device and method of making the sameTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Aug 11, 2015·7 cites·20 claims
- 2186US12225829B2Semiconductor structure, electrode structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Feb 11, 2025·0 cites·20 claims
- 2285US9614025B2Method of fabricating semiconductor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Apr 4, 2017·3 cites·19 claims
- 2384US12178144B2Top electrode last scheme for memory cell to prevent metal redepositTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Dec 24, 2024·0 cites·20 claims
- 2484US9865389B2Inductor structure with magnetic materialTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jan 9, 2018·1 cites·20 claims
- 2584US9269760B2Method of fabricating semiconductor deviceTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted Feb 23, 2016·3 cites·20 claims
- 2683US10741488B2Semiconductor device with integrated capacitor and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Aug 11, 2020·3 cites·8 claims
- 2783US10468587B2Semiconductor structure, electrode structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Nov 5, 2019·2 cites·20 claims
- 2883US9595521B2Capacitive deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Mar 14, 2017·3 cites·20 claims
- 2982US11143817B2Semiconductor structure and manufacturing method of the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Oct 12, 2021·2 cites·20 claims
- 3081US8969937B2Semiconductor deviceTAIWAN SEMICONDUCTOR MFG·Filed 2014·Granted Mar 3, 2015·3 cites·20 claims
- 3179US8501566B1Method for fabricating a recessed channel access transistor deviceCHOU CHUNG-YEN·Filed 2012·Granted Aug 6, 2013·6 cites·9 claims
- 3279US2025143190A1Semiconductor structure, electrode structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 3376US11167982B2Semiconductor arrangement and formation thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Nov 9, 2021·0 cites·20 claims
- 3476US9876169B2RRAM devices and methodsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Jan 23, 2018·4 cites·20 claims
- 3575US9944516B2High aspect ratio etch without upper wideningTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Granted Apr 17, 2018·2 cites·20 claims
- 3675US9825224B2RRAM deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Nov 21, 2017·3 cites·20 claims
- 3773US11800818B2Top electrode last scheme for memory cell to prevent metal redepositTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Oct 24, 2023·0 cites·20 claims
- 3873US11742262B2Integrated circuit having a resistor layer partially overlapping endcapsTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted Aug 29, 2023·0 cites·20 claims
- 3973US9911734B2Semiconductor device containing HEMT and MISFET and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted Mar 6, 2018·1 cites·20 claims
- 4073US9627467B2Thin film resistor integrated between interconnect levels and contacting an underlying dielectric layer protrusionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Apr 18, 2017·2 cites·18 claims
- 4172US10683204B2Semiconductor arrangement and formation thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jun 16, 2020·0 cites·20 claims
- 4270US11167979B2Microelectromechanical systems (MEMS) structure to prevent stiction after a wet cleaning processTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Nov 9, 2021·0 cites·20 claims
- 4370US10157706B2Inductor structure with magnetic materialTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 18, 2018·0 cites·20 claims
- 4470US9960285B2Contact structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2012·Granted May 1, 2018·2 cites·20 claims
- 4570US9434076B2Robot blade designTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2013·Granted Sep 6, 2016·2 cites·20 claims
- 4669US10164183B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Dec 25, 2018·1 cites·20 claims
- 4768US11233145B2Manufacturing method of semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jan 25, 2022·0 cites·20 claims
- 4867US11114610B2Semiconductor structure, electrode structure and method of forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 7, 2021·0 cites·20 claims
- 4967US9362271B2Capacitive deviceTAIWAN SEMICONDUCTOR MFG·Filed 2015·Granted Jun 7, 2016·1 cites·20 claims
- 5067US7025858B2Apparatus for supporting wafer in semiconductor processCHOU CHUNG-YEN·Filed 2003·Granted Apr 11, 2006·11 cites·18 claims
Showing the top 50 of 82 patent records by PatentIndex Score.
Join the waitlist — get patent alerts
Get an alert when Chung-Yen Chou files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →