Inventor · disambiguated record
Jay T. Scheuer
Also filed as: SCHEUER JAY · SCHEUER JAY T · SCHEUER JAY THOMAS
28 granted patents·13 pending applications·184 citations·filing 2002–2023
95Inventor score
Files withVARIAN SEMICONDUCTOR EQUIPMENT13APPLIED MATERIALS INC12VARIAN SEMICONDUCTOR EQUIPMENT ASS INC8BILOIU COSTEL2GUPTA ATUL1
Top patents by PatentIndex Score
41 records- 0197US11127557B1Ion source with single-slot tubular cathodeAPPLIED MATERIALS INC·Filed 2020·Granted Sep 21, 2021·5 cites·20 claims
- 0294US9685298B1Apparatus and method for contamination control in ion beam apparatusVARIAN SEMICONDUCTOR EQUIPMENT ASS INC·Filed 2016·Granted Jun 20, 2017·13 cites·20 claims
- 0391US7126808B2Wafer platen equipped with electrostatic clamp, wafer backside gas cooling, and high voltage operation capability for plasma dopingVARIAN SEMICONDUCTOR EQUIPMENT·Filed 2004·Granted Oct 24, 2006·69 cites·20 claims
- 0489US9761410B2Apparatus and method for in-situ cleaning in ion beam apparatusVARIAN SEMICONDUCTOR EQUIPMENT ASS INC·Filed 2016·Granted Sep 12, 2017·5 cites·20 claims
- 0589US8590485B2Small form factor plasma source for high density wide ribbon ion beam generationBILOIU COSTEL·Filed 2010·Granted Nov 26, 2013·11 cites·20 claims
- 0684US10522330B2In-situ plasma cleaning of process chamber componentsVARIAN SEMICONDUCTOR EQUIPMENT ASS INC·Filed 2015·Granted Dec 31, 2019·3 cites·8 claims
- 0784US8330127B2Flexible ion sourceLOW RUSSELL J·Filed 2008·Granted Dec 11, 2012·8 cites·17 claims
- 0883US6791097B2Adjustable conductance limiting aperture for ion implantersVARIAN SEMICONDUCTOR EQUIPMENT·Filed 2002·Granted Sep 14, 2004·19 cites·25 claims
- 0982US9805931B2Liquid immersion dopingVARIAN SEMICONDUCTOR EQUIPMENT ASS INC·Filed 2015·Granted Oct 31, 2017·3 cites·16 claims
- 1082US7999479B2Conjugated ICP and ECR plasma sources for wide ribbon ion beam generation and controlVARIAN SEMICONDUCTOR EQUIPMENT·Filed 2009·Granted Aug 16, 2011·6 cites·17 claims
- 1179US8142607B2High density helicon plasma source for wide ribbon ion beam generationBILOIU COSTEL·Filed 2008·Granted Mar 27, 2012·7 cites·11 claims
- 1277US10410844B2RF clean system for electrostatic elementsVARIAN SEMICONDUCTOR EQUIPMENT ASS INC·Filed 2017·Granted Sep 10, 2019·2 cites·10 claims
- 1376US7132672B2Faraday dose and uniformity monitor for plasma based ion implantationVARIAN SEMICONDUCTOR EQUIPMENT·Filed 2004·Granted Nov 7, 2006·21 cites·37 claims
- 1475USD1051838SSingle-slot tubular cathodeAPPLIED MATERIALS INC·Filed 2021·Granted Nov 19, 2024·0 cites·1 claims
- 1574US11631567B2Ion source with single-slot tubular cathodeAPPLIED MATERIALS INC·Filed 2021·Granted Apr 18, 2023·0 cites·18 claims
- 1670US11495434B2In-situ plasma cleaning of process chamber componentsVARIAN SEMICONDUCTOR EQUIPMENT ASS INC·Filed 2020·Granted Nov 8, 2022·0 cites·12 claims
- 1768US7622722B2Ion implantation device with a dual pumping mode and method thereofVARIAN SEMICONDUCTOR EQUIPMENT·Filed 2007·Granted Nov 24, 2009·2 cites·17 claims
- 1865US12154753B2Device to control uniformity of extracted ion beamAPPLIED MATERIALS INC·Filed 2021·Granted Nov 26, 2024·0 cites·14 claims
- 1965US11810746B2Variable thickness ion source extraction plateAPPLIED MATERIALS INC·Filed 2021·Granted Nov 7, 2023·0 cites·28 claims
- 2065US11037758B2In-situ plasma cleaning of process chamber componentsVARIAN SEMICONDUCTOR EQUIPMENT ASS INC·Filed 2019·Granted Jun 15, 2021·0 cites·16 claims
- 2165US9187832B2Extended lifetime ion sourceVARIAN SEMICONDUCTOR EQUIPMENT·Filed 2013·Granted Nov 17, 2015·1 cites·19 claims
- 2263US7521691B2Magnetic monitoring of a Faraday cup for an ion implanterVARIAN SEMICONDUCTOR EQUIPMENT·Filed 2006·Granted Apr 21, 2009·2 cites·32 claims
- 2360US11562885B2Particle yield via beam-line pressure controlAPPLIED MATERIALS INC·Filed 2021·Granted Jan 24, 2023·0 cites·20 claims
- 2460US2024222070A1Xray diffraction angle verification in an ion implanterAPPLIED MATERIALS INC·Filed 2023·Application pending·0 cites
- 2559US11651932B1Mismatched optics for angular control of extracted ion beamAPPLIED MATERIALS INC·Filed 2021·Granted May 16, 2023·0 cites·20 claims
- 2658US7878145B2Monitoring plasma ion implantation systems for fault detection and process controlVARIAN SEMICONDUCTOR EQUIPMENT·Filed 2004·Granted Feb 1, 2011·7 cites·17 claims
- 2757US10818469B2Cylindrical shaped arc chamber for indirectly heated cathode ion sourceAPPLIED MATERIALS INC·Filed 2018·Granted Oct 27, 2020·0 cites·18 claims
- 2856US12191113B2Systems and methods for optimizing full horizontal scanned beam distanceAPPLIED MATERIALS INC·Filed 2022·Granted Jan 7, 2025·0 cites·20 claims
- 2956US2024222072A1Xray diffraction angle verification in an ion implanterAPPLIED MATERIALS INC·Filed 2022·Application pending·0 cites
- 3052US11437215B2Electrostatic filter providing reduced particle generationAPPLIED MATERIALS INC·Filed 2019·Granted Sep 6, 2022·0 cites·19 claims
- 3149US2009166555A1RF electron source for ionizing gas clustersOLSON JOSEPH C·Filed 2007·Application pending·0 cites
- 3249US2008105828A1Techniques for removing molecular fragments from an ion implanterVARIAN SEMICONDUCTOR EQUIPMENT·Filed 2007·Application pending·0 cites
- 3347US2010155600A1Method and apparatus for plasma dose measurementVARIAN SEMICONDUCTOR EQUIPMENT·Filed 2008·Application pending·0 cites
- 3447US2008245957A1Tuning an ion implanter for optimal performanceGUPTA ATUL·Filed 2007·Application pending·0 cites
- 3542US2005205211A1Plasma immersion ion implantion apparatus and methodSINGH VIKRAM·Filed 2004·Application pending·0 cites
- 3641US2008160212A1Method and apparatuses for providing electrical contact for plasma processing applicationsKOO BON-WOONG·Filed 2006·Application pending·0 cites
- 3740US2006099830A1Plasma implantation using halogenated dopant species to limit deposition of surface layersVARIAN SEMICONDUCTOR EQUIPMENT·Filed 2004·Application pending·0 cites
- 3838US2006043531A1Reduction of source and drain parasitic capacitance in CMOS devicesVARIAN SEMICONDUCTOR EQUIPMENT·Filed 2004·Application pending·0 cites
- 3935US2011034014A1Cold implant for optimized silicide formationVARIAN SEMICONDUCTOR EQUIPMENT·Filed 2010·Application pending·0 cites
- 4033US2002175297A1Methods and apparatus for ion implantation with variable spatial frequency scan linesFiled 2002·Application pending·0 cites
- 4133US2017092473A1In-situ plasma cleaning of process chamber electrostatic elements having varied geometriesVARIAN SEMICONDUCTOR EQUIPMENT ASS INC·Filed 2015·Application pending·0 cites
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