Inventor · disambiguated record
Richard A. Conti
Also filed as: CONTI RICHARD · CONTI RICHARD A · CONTI RICHARD ANTHONY
75 granted patents·8 pending applications·3,914 citations·filing 1991–2021
99Inventor score
Top patents by PatentIndex Score
83 records- 0199US7084079B2Method for low temperature chemical vapor deposition of low-k films using selected cyclosiloxane and ozone gases for semiconductor applicationsIBM·Filed 2002·Granted Aug 1, 2006·610 cites·30 claims
- 0299US6531412B2Method for low temperature chemical vapor deposition of low-k films using selected cyclosiloxane and ozone gases for semiconductor applicationsIBM·Filed 2001·Granted Mar 11, 2003·554 cites·9 claims
- 0399US6030881AHigh throughput chemical vapor deposition process capable of filling high aspect ratio structuresNOVELLUS SYSTEMS INC·Filed 1998·Granted Feb 29, 2000·575 cites·34 claims
- 0498US6335261B1Directional CVD process with optimized etchbackIBM·Filed 2000·Granted Jan 1, 2002·214 cites·20 claims
- 0598US5431734AAluminum oxide low pressure chemical vapor deposition (LPCVD) system-fourier transform infrared (FTIR) source chemical controlIBM·Filed 1994·Granted Jul 11, 1995·431 cites·4 claims
- 0697US5665608AMethod of aluminum oxide low pressure chemical vapor deposition (LPCVD) system-fourier transform infrared (FTIR) source chemical controlIBM·Filed 1995·Granted Sep 9, 1997·478 cites·4 claims
- 0794US6570256B2Carbon-graded layer for improved adhesion of low-k dielectrics to silicon substratesIBM·Filed 2001·Granted May 27, 2003·85 cites·11 claims
- 0891US5923999AMethod of controlling dopant diffusion and metal contamination in thin polycide gate conductor of mosfet deviceIBM·Filed 1996·Granted Jul 13, 1999·83 cites·23 claims
- 0990US8673725B2Multilayer sidewall spacer for seam protection of a patterned structureO'MEARA DAVID L·Filed 2010·Granted Mar 18, 2014·15 cites·12 claims
- 1088US7462527B2Method of forming nitride films with high compressive stress for improved PFET device performanceIBM·Filed 2005·Granted Dec 9, 2008·14 cites·16 claims
- 1188US6740539B2Carbon-graded layer for improved adhesion of low-k dielectrics to silicon substratesIBM·Filed 2003·Granted May 25, 2004·37 cites·11 claims
- 1288US5383088AStorage capacitor with a conducting oxide electrode for metal-oxide dielectricsIBM·Filed 1993·Granted Jan 17, 1995·72 cites·4 claims
- 1387US11164958B2Nanosheet transistor having a strained channel with strain-preserving multi-segmented source/drain regionsIBM·Filed 2020·Granted Nov 2, 2021·2 cites·17 claims
- 1487US9859212B1Multi-level air gap formation in dual-damascene structureIBM·Filed 2016·Granted Jan 2, 2018·4 cites·20 claims
- 1587US6500772B2Methods and materials for depositing films on semiconductor substratesIBM·Filed 2001·Granted Dec 31, 2002·40 cites·8 claims
- 1686US6403423B1Modified gate processing for optimized definition of array and logic devices on same chipIBM·Filed 2000·Granted Jun 11, 2002·38 cites·30 claims
- 1786US5807788AMethod for selective deposition of refractory metal and device formed therebyIBM·Filed 1996·Granted Sep 15, 1998·72 cites·19 claims
- 1885US11114382B2Middle-of-line interconnect having low metal-to-metal interface resistanceIBM·Filed 2018·Granted Sep 7, 2021·4 cites·10 claims
- 1985US10224239B2Multi-level air gap formation in dual-damascene structureIBM·Filed 2017·Granted Mar 5, 2019·3 cites·20 claims
- 2084US6114736AControlled dopant diffusion and metal contamination in thin polycide gate conductor of MOSFET deviceIBM·Filed 1999·Granted Sep 5, 2000·49 cites·32 claims
- 2183US10665512B2Stress modulation of nFET and pFET fin structuresIBM·Filed 2018·Granted May 26, 2020·3 cites·14 claims
- 2281US6548357B2Modified gate processing for optimized definition of array and logic devices on same chipIBM·Filed 2002·Granted Apr 15, 2003·28 cites·18 claims
- 2380US12050206B2Pneumatic grip systems and material testing systems including pneumatic grip systemsILLINOIS TOOL WORKS·Filed 2021·Granted Jul 30, 2024·1 cites·21 claims
- 2480US10832973B2Stress modulation of nFET and pFET fin structuresIBM·Filed 2020·Granted Nov 10, 2020·1 cites·20 claims
- 2580US6486015B1Low temperature carbon rich oxy-nitride for improved RIE selectivityINFINEON TECHNOLOGIES AG·Filed 2000·Granted Nov 26, 2002·26 cites·6 claims
- 2679US7372158B2HDP-based ILD capping layerIBM·Filed 2006·Granted May 13, 2008·8 cites·15 claims
- 2779US6077786AMethods and apparatus for filling high aspect ratio structures with silicate glassIBM·Filed 1997·Granted Jun 20, 2000·57 cites·12 claims
- 2876US10586733B2Multi-level air gap formation in dual-damascene structureIBM·Filed 2019·Granted Mar 10, 2020·1 cites·20 claims
- 2975US10910273B2Forming shallow trench isolation regions for nanosheet field-effect transistor devices using sacrificial epitaxial layerIBM·Filed 2019·Granted Feb 2, 2021·1 cites·14 claims
- 3075US7138717B2HDP-based ILD capping layerIBM·Filed 2004·Granted Nov 21, 2006·19 cites·10 claims
- 3174US7651947B2Mask forming and implanting methods using implant stopping layer and mask so formedIBM·Filed 2006·Granted Jan 26, 2010·4 cites·17 claims
- 3273US10535550B2Protection of low temperature isolation fillIBM·Filed 2017·Granted Jan 14, 2020·1 cites·10 claims
- 3373US5614247AApparatus for chemical vapor deposition of aluminum oxideIBM·Filed 1994·Granted Mar 25, 1997·32 cites·5 claims
- 3470US6274440B1Manufacturing of cavity fuses on gate conductor levelIBM·Filed 1999·Granted Aug 14, 2001·39 cites·16 claims
- 3570US5728222AApparatus for chemical vapor deposition of aluminum oxideIBM·Filed 1995·Granted Mar 17, 1998·33 cites·10 claims
- 3669US5648113AAluminum oxide LPCVD systemIBM·Filed 1994·Granted Jul 15, 1997·25 cites·12 claims
- 3769US5268069ASafe method for etching silicon dioxideIBM·Filed 1992·Granted Dec 7, 1993·44 cites·17 claims
- 3868US11791398B2Nano multilayer carbon-rich low-k spacerIBM·Filed 2020·Granted Oct 17, 2023·0 cites·18 claims
- 3968US7838390B2Methods of forming integrated circuit devices having ion-cured electrically insulating layers thereinSAMSUNG ELECTRONICS CO LTD·Filed 2007·Granted Nov 23, 2010·4 cites·7 claims
- 4068US6667504B1Self-aligned buried strap process using doped HDP oxideIBM·Filed 2003·Granted Dec 23, 2003·11 cites·11 claims
- 4166US11322408B2Forming shallow trench isolation regions for nanosheet field-effect transistor devices using sacrificial epitaxial layerIBM·Filed 2020·Granted May 3, 2022·0 cites·20 claims
- 4266US7326651B2Method for forming damascene structure utilizing planarizing material coupled with compressive diffusion barrier materialIBM·Filed 2004·Granted Feb 5, 2008·12 cites·30 claims
- 4364US7485573B2Process of making a semiconductor device using multiple antireflective materialsIBM·Filed 2006·Granted Feb 3, 2009·1 cites·1 claims
- 4461US7179760B2Bilayer cap structure including HDP/bHDP films for conductive metallization and method of making sameIBM·Filed 2005·Granted Feb 20, 2007·1 cites·15 claims
- 4561US6177344B1BPSG reflow method to reduce thermal budget for next generation device including heating in a steam ambientAPPLIED MATERIALS INC·Filed 1998·Granted Jan 23, 2001·25 cites·23 claims
- 4660US10937892B2Nano multilayer carbon-rich low-k spacerIBM·Filed 2018·Granted Mar 2, 2021·0 cites·15 claims
- 4759US11189532B2Dual width finned semiconductor structureIBM·Filed 2019·Granted Nov 30, 2021·0 cites·19 claims
- 4859US6429149B1Low temperature LPCVD PSG/BPSG processIBM·Filed 2000·Granted Aug 6, 2002·6 cites·18 claims
- 4958US8664102B2Dual sidewall spacer for seam protection of a patterned structureO'MEARA DAVID L·Filed 2010·Granted Mar 4, 2014·1 cites·13 claims
- 5057US10204827B2Multi-level air gap formation in dual-damascene structureIBM·Filed 2017·Granted Feb 12, 2019·0 cites·20 claims
Showing the top 50 of 83 patent records by PatentIndex Score.
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