Inventor · disambiguated record
Yi Song
Also filed as: SONG YI · Song yi bo
29 granted patents·96 citations·filing 2010–2022
95Inventor score
Files withIBM24LENOVO ENTPR SOLUTIONS SINGAPORE PTE LTD2INST OF MICROELECTRONICS CAS1INST OF MICROELECTRONICS CHINESE ACADEMY1UNIV ILLINOIS1
Top patents by PatentIndex Score
29 records- 0196US10832907B2Gate-all-around field-effect transistor devices having source/drain extension contacts to channel layers for reduced parasitic resistanceIBM·Filed 2019·Granted Nov 10, 2020·16 cites·19 claims
- 0296US10490447B1Airgap formation in BEOL interconnect structure using sidewall image transferIBM·Filed 2018·Granted Nov 26, 2019·11 cites·13 claims
- 0394US10461154B1Bottom isolation for nanosheet transistors on bulk substrateIBM·Filed 2018·Granted Oct 29, 2019·9 cites·16 claims
- 0494US8361869B2Method for manufacturing suspended fin and gate-all-around field effect transistorINST OF MICROELECTRONICS CAS·Filed 2011·Granted Jan 29, 2013·25 cites·19 claims
- 0590US9224809B2Field effect transistor structure comprising a stack of vertically separated channel nanowiresUNIV ILLINOIS·Filed 2013·Granted Dec 29, 2015·12 cites·24 claims
- 0689US10892328B2Source/drain extension regions and air spacers for nanosheet field-effect transistor structuresIBM·Filed 2019·Granted Jan 12, 2021·5 cites·20 claims
- 0787US12356680B2Nanosheet device with air-gaped source/drain regionsIBM·Filed 2021·Granted Jul 8, 2025·1 cites·12 claims
- 0886US10937860B2Nanosheet transistor bottom isolationIBM·Filed 2019·Granted Mar 2, 2021·3 cites·15 claims
- 0984US10749011B2Area selective cyclic deposition for VFET top spacerIBM·Filed 2018·Granted Aug 18, 2020·3 cites·15 claims
- 1081US10446686B2Asymmetric dual gate fully depleted transistorIBM·Filed 2018·Granted Oct 15, 2019·3 cites·17 claims
- 1179US10833180B2Self-aligned tunneling field effect transistorsIBM·Filed 2018·Granted Nov 10, 2020·2 cites·20 claims
- 1276US10886169B2Airgap formation in BEOL interconnect structure using sidewall image transferIBM·Filed 2019·Granted Jan 5, 2021·1 cites·12 claims
- 1372US9699063B2Transitioning a routing switch device between network protocolsIBM·Filed 2015·Granted Jul 4, 2017·2 cites·20 claims
- 1467US11489044B2Nanosheet transistor bottom isolationIBM·Filed 2020·Granted Nov 1, 2022·0 cites·16 claims
- 1565US11876136B2Transistor having wrap-around source/drain contacts and under-contact spacersIBM·Filed 2022·Granted Jan 16, 2024·0 cites·20 claims
- 1665US10770361B2Controlling active fin height of FinFET device using etch protection layer to prevent recess of isolation layer during gate oxide removalIBM·Filed 2020·Granted Sep 8, 2020·0 cites·20 claims
- 1764US7960235B1Method for manufacturing a MOSFET with a surrounding gate of bulk SiINST OF MICROELECTRONICS CHINESE ACADEMY·Filed 2010·Granted Jun 14, 2011·3 cites·10 claims
- 1861US10892193B2Controlling active fin height of FinFET deviceIBM·Filed 2019·Granted Jan 12, 2021·0 cites·16 claims
- 1959US12046680B2Inner spacer formation for nanosheet transistorsIBM·Filed 2021·Granted Jul 23, 2024·0 cites·20 claims
- 2059US11189532B2Dual width finned semiconductor structureIBM·Filed 2019·Granted Nov 30, 2021·0 cites·19 claims
- 2158US11296226B2Transistor having wrap-around source/drain contacts and under-contact spacersIBM·Filed 2019·Granted Apr 5, 2022·0 cites·11 claims
- 2257US10665514B2Controlling active fin height of FinFET device using etch protection layer to prevent recess of isolation layer during gate oxide removalIBM·Filed 2018·Granted May 26, 2020·0 cites·16 claims
- 2355US10903162B2Fuse element resistance enhancement by laser anneal and ion implantationIBM·Filed 2019·Granted Jan 26, 2021·0 cites·9 claims
- 2454US10672668B2Dual width finned semiconductor structureIBM·Filed 2018·Granted Jun 2, 2020·0 cites·14 claims
- 2549US9374308B2Openflow switch mode transition processingLENOVO ENTPR SOLUTIONS SINGAPORE PTE LTD·Filed 2013·Granted Jun 21, 2016·0 cites·12 claims
- 2647US11217680B2Vertical field-effect transistor with T-shaped gateIBM·Filed 2019·Granted Jan 4, 2022·0 cites·7 claims
- 2746US10804262B2Cointegration of FET devices with decoupling capacitorIBM·Filed 2019·Granted Oct 13, 2020·0 cites·20 claims
- 2846US10212083B2Openflow data channel and control channel separationLENOVO ENTPR SOLUTIONS SINGAPORE PTE LTD·Filed 2013·Granted Feb 19, 2019·0 cites·18 claims
- 2943US11355644B2Vertical field effect transistors with self aligned contactsIBM·Filed 2018·Granted Jun 7, 2022·0 cites·8 claims
Join the waitlist — get patent alerts
Get an alert when Yi Song files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →