Inventor · disambiguated record
Patrick M. Martin
Also filed as: MARTIN PATRICK · MARTIN PATRICK M
22 granted patents·7 pending applications·183 citations·filing 1991–2017
95Inventor score
Files withGODET LUDOVIC6APPLIED MATERIALS INC5VARIAN SEMICONDUCTOR EQUIPMENT5MARTIN PATRICK M2TEXAS INSTRUMENTS INC2
Top patents by PatentIndex Score
29 records- 0196US8133804B1Method and system for modifying patterned photoresist using multi-step ion implantationGODET LUDOVIC·Filed 2010·Granted Mar 13, 2012·35 cites·20 claims
- 0294US8460569B2Method and system for post-etch treatment of patterned substrate featuresGODET LUDOVIC·Filed 2011·Granted Jun 11, 2013·18 cites·7 claims
- 0393US9716012B2Methods of selective layer depositionAPPLIED MATERIALS INC·Filed 2014·Granted Jul 25, 2017·15 cites·18 claims
- 0488US8354655B2Method and system for controlling critical dimension and roughness in resist featuresVARIAN SEMICONDUCTOR EQUIPMENT·Filed 2011·Granted Jan 15, 2013·7 cites·15 claims
- 0583US8435727B2Method and system for modifying photoresist using electromagnetic radiation and ion implantationGODET LUDOVIC·Filed 2010·Granted May 7, 2013·5 cites·18 claims
- 0682US10026613B2Utilization of angled trench for effective aspect ratio trapping of defects in strain-relaxed heteroepitaxy of semiconductor filmsAPPLIED MATERIALS INC·Filed 2017·Granted Jul 17, 2018·2 cites·12 claims
- 0782US9340877B2Method and system for modifying photoresist using electromagnetic radiation and ion implantationVARIAN SEMICONDUCTOR EQUIPMENT·Filed 2013·Granted May 17, 2016·4 cites·4 claims
- 0880US9406507B2Utilization of angled trench for effective aspect ratio trapping of defects in strain relaxed heteroepitaxy of semiconductor filmsAPPLIED MATERIALS INC·Filed 2015·Granted Aug 2, 2016·2 cites·12 claims
- 0979US7894918B2System for analyzing batch processesABB RESEARCH LTD·Filed 2006·Granted Feb 22, 2011·16 cites·13 claims
- 1072US8778603B2Method and system for modifying substrate relief features using ion implantationGODET LUDOVIC·Filed 2011·Granted Jul 15, 2014·2 cites·10 claims
- 1171US8912097B2Method and system for patterning a substrateMARTIN PATRICK M·Filed 2010·Granted Dec 16, 2014·5 cites·17 claims
- 1268US8974683B2Method and system for modifying resist openings using multiple angled ionsGODET LUDOVIC·Filed 2011·Granted Mar 10, 2015·2 cites·15 claims
- 1364US8937019B2Techniques for generating three dimensional structuresVARIAN SEMICONDUCTOR EQUIPMENT·Filed 2013·Granted Jan 20, 2015·1 cites·20 claims
- 1462US2016326636A1Methods Of Affecting Material Properties And Applications ThereforVARIAN SEMICONDUCTOR EQUIPMENT ASS INC·Filed 2016·Application pending·0 cites
- 1558US9799531B2Utilization of angled trench for effective aspect ratio trapping of defects in strain-relaxed heteroepitaxy of semiconductor filmsAPPLIED MATERIALS INC·Filed 2016·Granted Oct 24, 2017·0 cites·13 claims
- 1657US9767987B2Method and system for modifying substrate relief features using ion implantationVARIAN SEMICONDUCTOR EQUIPMENT ASS INC·Filed 2014·Granted Sep 19, 2017·0 cites·20 claims
- 1757US5220157AScrip controlled cash dispensing systemTIDEL ENG INC·Filed 1991·Granted Jun 15, 1993·36 cites·10 claims
- 1855US9425027B2Methods of affecting material properties and applications thereforGODET LUDOVIC·Filed 2012·Granted Aug 23, 2016·0 cites·7 claims
- 1954US7049034B2Photomask having an internal substantially transparent etch stop layerPHOTRONICS INC·Filed 2003·Granted May 23, 2006·5 cites·35 claims
- 2053US8698109B2Method and system for controlling critical dimension and roughness in resist featuresVARIAN SEMICONDUCTOR EQUIPMENT·Filed 2013·Granted Apr 15, 2014·0 cites·6 claims
- 2152US5508233AGlobal planarization process using patterned oxideTEXAS INSTRUMENTS INC·Filed 1994·Granted Apr 16, 1996·20 cites·13 claims
- 2247US8952344B2Techniques for processing photoresist features using ionsVARIAN SEMICONDUCTOR EQUIPMENT·Filed 2013·Granted Feb 10, 2015·0 cites·20 claims
- 2347US2011153803A1System and Method for Enforcing Device Service EligibilityKUO RICHARD·Filed 2009·Application pending·0 cites
- 2437US5635428AGlobal planarization using a polyimide blockTEXAS INSTRUMENTS INC·Filed 1994·Granted Jun 3, 1997·8 cites·3 claims
- 2536US2004086787A1Alternating aperture phase shift photomask having plasma etched isotropic quartz featuresFiled 2002·Application pending·0 cites
- 2634US2015275364A1Cyclic Spike Anneal Chemical Exposure For Low Thermal Budget ProcessingAPPLIED MATERIALS INC·Filed 2015·Application pending·0 cites
- 2734US2012137971A1Hydrophobic property alteration using ion implantationMARTIN PATRICK M·Filed 2010·Application pending·0 cites
- 2833US2012213941A1Ion-assisted plasma treatment of a three-dimensional structureSTEEN LOUIS·Filed 2012·Application pending·0 cites
- 2932US2005026053A1Photomask having an internal substantially transparent etch stop layerFiled 2004·Application pending·0 cites
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