Inventor · disambiguated record
Judy H. Huang
Also filed as: HUANG JUDY · HUANG JUDY H · HUANG JUDY HSIU-CHIH
54 granted patents·6 pending applications·6,589 citations·filing 1995–2023
99Inventor score
Files withAPPLIED MATERIALS INC35NOVELLUS SYSTEMS INC14UNIV JOHNS HOPKINS2BERGER ALEXANDER J1CHO YOUNG KYU1
Top patents by PatentIndex Score
60 records- 0199US7915139B1CVD flowable gap fillNOVELLUS SYSTEMS INC·Filed 2009·Granted Mar 29, 2011·807 cites·25 claims
- 0299US7888233B1Flowable film dielectric gap fill processNOVELLUS SYSTEMS INC·Filed 2009·Granted Feb 15, 2011·572 cites·30 claims
- 0399US7582555B1CVD flowable gap fillNOVELLUS SYSTEMS INC·Filed 2005·Granted Sep 1, 2009·605 cites·20 claims
- 0499US7524735B1Flowable film dielectric gap fill processNOVELLUS SYSTEMS INC·Filed 2006·Granted Apr 28, 2009·166 cites·19 claims
- 0598US8809161B2Flowable film dielectric gap fill processNOVELLUS SYSTEMS INC·Filed 2013·Granted Aug 19, 2014·21 cites·27 claims
- 0698US6821571B2Plasma treatment to enhance adhesion and to minimize oxidation of carbon-containing layersAPPLIED MATERIALS INC·Filed 1999·Granted Nov 23, 2004·262 cites·7 claims
- 0798US6340435B1Integrated low K dielectrics and etch stopsAPPLIED MATERIALS INC·Filed 1999·Granted Jan 22, 2002·536 cites·14 claims
- 0898US5908672AMethod and apparatus for depositing a planarized passivation layerAPPLIED MATERIALS INC·Filed 1997·Granted Jun 1, 1999·593 cites·21 claims
- 0997US6858153B2Integrated low K dielectrics and etch stopsAPPLIED MATERIALS INC·Filed 2001·Granted Feb 22, 2005·256 cites·21 claims
- 1097US6794311B2Method and apparatus for treating low k dielectric layers to reduce diffusionAPPLIED MATERIALS INC·Filed 2001·Granted Sep 21, 2004·260 cites·29 claims
- 1197US6358573B1Mixed frequency CVD processAPPLIED MATERIALS INC·Filed 2000·Granted Mar 19, 2002·130 cites·20 claims
- 1296US6187072B1Method and apparatus for reducing perfluorocompound gases from substrate processing equipment emissionsAPPLIED MATERIALS INC·Filed 1996·Granted Feb 13, 2001·154 cites·29 claims
- 1395US8580697B1CVD flowable gap fillLANG CHI-I·Filed 2011·Granted Nov 12, 2013·44 cites·19 claims
- 1495US8481403B1Flowable film dielectric gap fill processGAURI VISHAL·Filed 2011·Granted Jul 9, 2013·30 cites·25 claims
- 1595US7211525B1Hydrogen treatment enhanced gap fillNOVELLUS SYSTEMS INC·Filed 2005·Granted May 1, 2007·540 cites·21 claims
- 1695US6533855B1Dispersions of silicalite and zeolite nanoparticles in nonpolar solventsNOVELLUS SYSTEMS INC·Filed 2001·Granted Mar 18, 2003·103 cites·13 claims
- 1795US6098568AMixed frequency CVD apparatusAPPLIED MATERIALS INC·Filed 1997·Granted Aug 8, 2000·106 cites·5 claims
- 1895US5792269AGas distribution for CVD systemsAPPLIED MATERIALS INC·Filed 1995·Granted Aug 11, 1998·164 cites·14 claims
- 1994US6209484B1Method and apparatus for depositing an etch stop layerAPPLIED MATERIALS INC·Filed 2000·Granted Apr 3, 2001·74 cites·19 claims
- 2093US7727906B1H2-based plasma treatment to eliminate within-batch and batch-to-batch etch driftNOVELLUS SYSTEMS INC·Filed 2006·Granted Jun 1, 2010·23 cites·15 claims
- 2193US6669858B2Integrated low k dielectrics and etch stopsAPPLIED MATERIALS INC·Filed 2001·Granted Dec 30, 2003·47 cites·14 claims
- 2293US6355571B1Method and apparatus for reducing copper oxidation and contamination in a semiconductor deviceAPPLIED MATERIALS INC·Filed 1999·Granted Mar 12, 2002·98 cites·14 claims
- 2392US7344996B1Helium-based etch process in deposition-etch-deposition gap fillNOVELLUS SYSTEMS INC·Filed 2005·Granted Mar 18, 2008·22 cites·10 claims
- 2492US5968324AMethod and apparatus for depositing antireflective coatingAPPLIED MATERIALS INC·Filed 1996·Granted Oct 19, 1999·85 cites·37 claims
- 2591US7482245B1Stress profile modulation in STI gap fillNOVELLUS SYSTEMS INC·Filed 2006·Granted Jan 27, 2009·22 cites·22 claims
- 2690US6517913B1Method and apparatus for reducing perfluorocompound gases from substrate processing equipment emissionsAPPLIED MATERIALS INC·Filed 2000·Granted Feb 11, 2003·65 cites·22 claims
- 2790US6077764AProcess for depositing high deposition rate halogen-doped silicon oxide layerAPPLIED MATERIALS INC·Filed 1997·Granted Jun 20, 2000·91 cites·33 claims
- 2889US7476621B1Halogen-free noble gas assisted H2 plasma etch process in deposition-etch-deposition gap fillNOVELLUS SYSTEMS INC·Filed 2006·Granted Jan 13, 2009·15 cites·21 claims
- 2989US7227244B2Integrated low k dielectrics and etch stopsAPPLIED MATERIALS INC·Filed 2004·Granted Jun 5, 2007·27 cites·8 claims
- 3089US6734102B2Plasma treatment for copper oxide reductionAPPLIED MATERIALS INC·Filed 2002·Granted May 11, 2004·39 cites·18 claims
- 3188US6946401B2Plasma treatment for copper oxide reductionAPPLIED MATERIALS INC·Filed 2003·Granted Sep 20, 2005·28 cites·13 claims
- 3288US6324439B1Method and apparatus for applying films using reduced deposition ratesAPPLIED MATERIALS INC·Filed 2000·Granted Nov 27, 2001·37 cites·22 claims
- 3387US6083852AMethod for applying films using reduced deposition ratesAPPLIED MATERIALS INC·Filed 1997·Granted Jul 4, 2000·69 cites·19 claims
- 3486US6635583B2Silicon carbide deposition for use as a low-dielectric constant anti-reflective coatingAPPLIED MATERIALS INC·Filed 1998·Granted Oct 21, 2003·72 cites·19 claims
- 3585US6395092B1Apparatus for depositing high deposition rate halogen-doped silicon oxide layerAPPLIED MATERIALS INC·Filed 2000·Granted May 28, 2002·30 cites·19 claims
- 3684US7144606B2Plasma treatment to enhance adhesion and to minimize oxidation of carbon-containing layersAPPLIED MATERIALS INC·Filed 2004·Granted Dec 5, 2006·23 cites·20 claims
- 3784US6156149AIn situ deposition of a dielectric oxide layer and anti-reflective coatingAPPLIED MATERIALS INC·Filed 1997·Granted Dec 5, 2000·71 cites·19 claims
- 3881US8677929B2Method and apparatus for masking solar cell substrates for depositionBERGER ALEXANDER J·Filed 2011·Granted Mar 25, 2014·6 cites·3 claims
- 3981US6777349B2Hermetic silicon carbideNOVELLUS SYSTEMS INC·Filed 2002·Granted Aug 17, 2004·28 cites·52 claims
- 4079US6127262AMethod and apparatus for depositing an etch stop layerAPPLIED MATERIALS INC·Filed 1997·Granted Oct 3, 2000·49 cites·22 claims
- 4178US6562544B1Method and apparatus for improving accuracy in photolithographic processing of substratesAPPLIED MATERIALS INC·Filed 1996·Granted May 13, 2003·53 cites·15 claims
- 4276US6436843B1System and method for coating substrates using ink jet technologyNOVELLUS SYSTEMS INC·Filed 2001·Granted Aug 20, 2002·19 cites·15 claims
- 4373US6951826B2Silicon carbide deposition for use as a low dielectric constant anti-reflective coatingAPPLIED MATERIALS INC·Filed 2003·Granted Oct 4, 2005·14 cites·29 claims
- 4472US6974766B1In situ deposition of a low κ dielectric layer, barrier layer, etch stop, and anti-reflective coating for damascene applicationAPPLIED MATERIALS INC·Filed 1999·Granted Dec 13, 2005·31 cites·22 claims
- 4571US7470611B2In situ deposition of a low K dielectric layer, barrier layer, etch stop, and anti-reflective coating for damascene applicationAPPLIED MATERIALS INC·Filed 2005·Granted Dec 30, 2008·8 cites·18 claims
- 4670US6700202B2Semiconductor device having reduced oxidation interfaceAPPLIED MATERIALS INC·Filed 2001·Granted Mar 2, 2004·8 cites·5 claims
- 4769US9034143B2Inductive/capacitive hybrid plasma source and system with such chamberINTEVAC INC·Filed 2012·Granted May 19, 2015·2 cites·12 claims
- 4868US8183150B2Semiconductor device having silicon carbide and conductive pathway interfaceHUANG JUDY H·Filed 2008·Granted May 22, 2012·2 cites·16 claims
- 4968US7070657B1Method and apparatus for depositing antireflective coatingAPPLIED MATERIALS INC·Filed 1999·Granted Jul 4, 2006·24 cites·27 claims
- 5063US7670945B2In situ deposition of a low κ dielectric layer, barrier layer, etch stop, and anti-reflective coating for damascene applicationAPPLIED MATERIALS INC·Filed 2008·Granted Mar 2, 2010·5 cites·10 claims
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