Inventor · disambiguated record
Masaharu Ninomiya
Also filed as: NINOMIYA MASAHARU
7 granted patents·2 pending applications·62 citations·filing 1997–2010
84Inventor score
Files withSUMCO CORP4SUMITOMO METAL IND2MATSUMOTO KOJI1NAT UNIVERSITY CORP1SUMITOMO MITSUBISHI SILICON1
Top patents by PatentIndex Score
9 records- 0181US8110486B2Method of manufacturing semiconductor wafer by forming a strain relaxation SiGe layer on an insulating layer of SOI waferMATSUMOTO KOJI·Filed 2007·Granted Feb 7, 2012·10 cites·3 claims
- 0268US7977221B2Method for producing strained Si-SOI substrate and strained Si-SOI substrate produced by the sameSUMCO CORP·Filed 2007·Granted Jul 12, 2011·4 cites·9 claims
- 0366US7405142B2Semiconductor substrate and field-effect transistor, and manufacturing method for sameSUMCO CORP·Filed 2003·Granted Jul 29, 2008·13 cites·39 claims
- 0465US7767548B2Method for manufacturing semiconductor wafer including a strained silicon layerSUMCO CORP·Filed 2007·Granted Aug 3, 2010·4 cites·20 claims
- 0560US6261362B1Silicon epitaxial wafer manufacturing methodSUMITOMO METAL IND·Filed 1999·Granted Jul 17, 2001·14 cites·5 claims
- 0652US7198997B2Method for producing semiconductor substrate, method for producing field effect transistor, semiconductor substrate, and field effect transistorSUMITOMO MITSUBISHI SILICON·Filed 2002·Granted Apr 3, 2007·5 cites·12 claims
- 0742US6277193B1Method for manufacturing semiconductor silicon epitaxial wafer and semiconductor deviceSUMITOMO METAL IND·Filed 1997·Granted Aug 21, 2001·12 cites·8 claims
- 0839US2006214257A1Production method of strained silicon-SOI substrate and strained silicon-SOI substrate produced by sameNAT UNIVERSITY CORP·Filed 2006·Application pending·0 cites
- 0938US2011025838A1Method and apparatus for inspecting defects in waferSUMCO CORP·Filed 2010·Application pending·0 cites
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