Inventor · disambiguated record
Bill Wofford
Also filed as: WOFFORD BILL · WOFFORD BILL A · WOFFORD BILL ALAN
8 granted patents·3 pending applications·157 citations·filing 1995–2022
87Inventor score
Top patents by PatentIndex Score
11 records- 0185US7713825B2LDMOS transistor double diffused region formation processTEXAS INSTRUMENTS INC·Filed 2007·Granted May 11, 2010·11 cites·13 claims
- 0284US5750823AProcess and device for destruction of halohydrocarbonsR F ENVIRONMENTAL SYSTEMS INC·Filed 1995·Granted May 12, 1998·97 cites·12 claims
- 0380US6686237B1High precision integrated circuit capacitorsTEXAS INSTRUMENTS INC·Filed 2002·Granted Feb 3, 2004·26 cites·7 claims
- 0472US7435659B2Method for manufacturing a semiconductor device having an alignment feature formed using an N-type dopant and a wet oxidation processTEXAS INSTRUMENTS INC·Filed 2005·Granted Oct 14, 2008·4 cites·15 claims
- 0571US7118959B2Integrated circuit capacitor having antireflective dielectricTEXAS INSTRUMENTS INC·Filed 2005·Granted Oct 10, 2006·5 cites·14 claims
- 0665US6806196B2High precision integrated circuit capacitorsTEXAS INSTRUMENTS INC·Filed 2003·Granted Oct 19, 2004·10 cites·7 claims
- 0764US7808071B2Semiconductor device having improved oxide thickness at a shallow trench isolation edge and method of manufacture thereofTEXAS INSTRUMENTS INC·Filed 2008·Granted Oct 5, 2010·4 cites·10 claims
- 0850US2024213333A1Iii-n device with planarized topological structureTEXAS INSTRUMENTS INC·Filed 2022·Application pending·0 cites
- 0943US7595525B2Integrated circuit capacitor having antireflective dielectricTEXAS INSTRUMENTS INC·Filed 2006·Granted Sep 29, 2009·0 cites·7 claims
- 1042US2010041241A1High density plasma dielectric desposition for void free gap fillTEXAS INSTRUMENTS INC·Filed 2009·Application pending·0 cites
- 1138US2006105573A1Method for selective plasma etch of an oxide layerTEXAS INSTRUMENTS INC·Filed 2004·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →