Inventor · disambiguated record
Adrian D. Williams
Also filed as: WILLIAMS ADRIAN D
10 granted patents·2 pending applications·19 citations·filing 2007–2020
82Inventor score
Top patents by PatentIndex Score
12 records- 0182US9230818B2Planarization of GaN by photoresist technique using an inductively coupled plasmaMOUSTAKAS THEORDORE D·Filed 2012·Granted Jan 5, 2016·12 cites·11 claims
- 0273US9478652B1Monolithic integrated circuit (MMIC) structure having composite etch stop layer and method for forming such structureRAYTHEON CO·Filed 2015·Granted Oct 25, 2016·2 cites·2 claims
- 0368US8257987B2Planarization of GaN by photoresist technique using an inductively coupled plasmaMOUSTAKAS THEODORE D·Filed 2007·Granted Sep 4, 2012·3 cites·16 claims
- 0464US9887089B2Semiconductor structures having T-shaped electrodesRAYTHEON CO·Filed 2016·Granted Feb 6, 2018·1 cites·7 claims
- 0557US11038030B2Transistor having low capacitance field plate structureRAYTHEON CO·Filed 2020·Granted Jun 15, 2021·0 cites·2 claims
- 0656US9082722B2Monolithic integrated circuit (MMIC) structure and method for forming such structureRAYTHEON CO·Filed 2013·Granted Jul 14, 2015·1 cites·5 claims
- 0751US10541148B2Method for controlling the amount of radiation having a predetermined wavelength to be absorbed by a structure disposed on a semiconductorRAYTHEON CO·Filed 2018·Granted Jan 21, 2020·0 cites·12 claims
- 0849US10720497B2Transistor having low capacitance field plate structureRAYTHEON CO·Filed 2017·Granted Jul 21, 2020·0 cites·18 claims
- 0948US10014266B2Monolithic microwave integrated circuit (MMIC) and method for forming such MMIC having rapid thermal annealing compensation elementsRAYTHEON CO·Filed 2016·Granted Jul 3, 2018·0 cites·14 claims
- 1046US10840114B1Rapid thermal anneal apparatus and methodRAYTHEON CO·Filed 2017·Granted Nov 17, 2020·0 cites·17 claims
- 1146US2015235856A1Semiconductor structures having t-shaped electrodesRAYTHEON CO·Filed 2014·Application pending·0 cites
- 1232US2018019298A1METHOD FOR FORMING PATTERNED TANTALUM NITRIDE (TaN) RESISTORS ON DIELECTRIC MATERIAL PASSIVATION LAYERSRAYTHEON CO·Filed 2016·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →