Inventor · disambiguated record
Nader Radjy
Also filed as: RADJY NADER · RADJY NADER A
15 granted patents·802 citations·filing 1988–1997
95Inventor score
Top patents by PatentIndex Score
15 records- 0197US5598369AFlash EEPROM array with floating substrate erase operationADVANCED MICRO DEVICES INC·Filed 1995·Granted Jan 28, 1997·264 cites·21 claims
- 0292US5912842ANonvolatile PMOS two transistor memory cell and arrayPROGRAMMABLE MICROELECTRONICS·Filed 1997·Granted Jun 15, 1999·106 cites·20 claims
- 0389US5101378AOptimized electrically erasable cell for minimum read disturb and associated method of sensingADVANCED MICRO DEVICES INC·Filed 1990·Granted Mar 31, 1992·75 cites·11 claims
- 0487US5966329AApparatus and method for programming PMOS memory cellsPROGRAMMABLE MICROELECTRONICS·Filed 1997·Granted Oct 12, 1999·67 cites·17 claims
- 0586US5561620AFlash EEPROM array with floating substrate erase operationADVANCED MICRO DEVICES INC·Filed 1995·Granted Oct 1, 1996·55 cites·24 claims
- 0679US5005155AOptimized electrically erasable PLA cell for minimum read disturbADVANCED MICRO DEVICES INC·Filed 1988·Granted Apr 2, 1991·37 cites·9 claims
- 0776US4935648AOptimized E2 pal cell for minimum read disturbADVANCE MICRO DEVICES INC·Filed 1989·Granted Jun 19, 1990·31 cites·8 claims
- 0873US5191556AMethod of page-mode programming flash eeprom cell arraysADVANCED MICRO DEVICES INC·Filed 1991·Granted Mar 2, 1993·34 cites·8 claims
- 0966US5521867AAdjustable threshold voltage conversion circuitADVANCED MICRO DEVICES INC·Filed 1993·Granted May 28, 1996·25 cites·34 claims
- 1062US5973372ASilicided shallow junction transistor formation and structure with high and low breakdown voltagesFiled 1997·Granted Oct 26, 1999·22 cites·13 claims
- 1162US5576991AMultistepped threshold convergence for a flash memory arrayADVANCED MICRO DEVICES INC·Filed 1994·Granted Nov 19, 1996·20 cites·16 claims
- 1258US5231602AApparatus and method for improving the endurance of floating gate devicesADVANCED MICRO DEVICES INC·Filed 1990·Granted Jul 27, 1993·18 cites·9 claims
- 1357US6011272ASilicided shallow junction formation and structure with high and low breakdown voltagesADVANCED MICRO DEVICES INC·Filed 1997·Granted Jan 4, 2000·17 cites·7 claims
- 1455US5978272ANonvolatile memory structure for programmable logic devicesADVANCED MICRO DEVICES INC·Filed 1997·Granted Nov 2, 1999·15 cites·6 claims
- 1555US5579261AReduced column leakage during programming for a flash memory arrayADVANCED MICRO DEVICES INC·Filed 1995·Granted Nov 26, 1996·16 cites·5 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →