Inventor · disambiguated record
Kwan-Yong Lim
Also filed as: LIM KWAN-YONG
104 granted patents·19 pending applications·1,456 citations·filing 2001–2019
99Inventor score
Files withGLOBALFOUNDRIES INC44HYNIX SEMICONDUCTOR INC40TEXAS INSTRUMENTS INC14LIM KWAN-YONG8SUNG MIN-GYU6
Top patents by PatentIndex Score
123 records- 0199US9640636B1Methods of forming replacement gate structures and bottom and top source/drain regions on a vertical transistor deviceGLOBALFOUNDRIES INC·Filed 2016·Granted May 2, 2017·88 cites·24 claims
- 0299US9536793B1Self-aligned gate-first VFETs using a gate spacer recessGLOBALFOUNDRIES INC·Filed 2016·Granted Jan 3, 2017·74 cites·13 claims
- 0399US9412616B1Methods of forming single and double diffusion breaks on integrated circuit products comprised of FinFET devices and the resulting productsGLOBALFOUNDRIES INC·Filed 2015·Granted Aug 9, 2016·148 cites·22 claims
- 0499US9362181B1Methods of forming diffusion breaks on integrated circuit products comprised of FinFET devices and the resulting productsGLOBALFOUNDRIES INC·Filed 2015·Granted Jun 7, 2016·69 cites·31 claims
- 0598US9865704B2Single and double diffusion breaks on integrated circuit products comprised of FinFET devicesGLOBALFOUNDRIES INC·Filed 2016·Granted Jan 9, 2018·41 cites·20 claims
- 0698US9799751B1Methods of forming a gate structure on a vertical transistor deviceGLOBALFOUNDRIES INC·Filed 2016·Granted Oct 24, 2017·28 cites·30 claims
- 0798US9773708B1Devices and methods of forming VFET with self-aligned replacement metal gates aligned to top spacer post top source drain EPIGLOBALFOUNDRIES INC·Filed 2016·Granted Sep 26, 2017·75 cites·19 claims
- 0898US9530863B1Methods of forming vertical transistor devices with self-aligned replacement gate structuresGLOBALFOUNDRIES INC·Filed 2016·Granted Dec 27, 2016·68 cites·19 claims
- 0998US9530866B1Methods of forming vertical transistor devices with self-aligned top source/drain conductive contactsGLOBALFOUNDRIES INC·Filed 2016·Granted Dec 27, 2016·128 cites·16 claims
- 1097US9911738B1Vertical-transport field-effect transistors with a damascene gate strapGLOBALFOUNDRIES INC·Filed 2017·Granted Mar 6, 2018·18 cites·20 claims
- 1197US9711511B1Vertical channel transistor-based semiconductor memory structureGLOBALFOUNDRIES INC·Filed 2016·Granted Jul 18, 2017·30 cites·16 claims
- 1297US7682911B2Semiconductor device having a fin transistor and method for fabricating the sameHYNIX SEMICONDUCTOR INC·Filed 2007·Granted Mar 23, 2010·43 cites·9 claims
- 1396US10083971B1Vertical SRAM structure with cross-coupling contacts penetrating through common gates to bottom S/D metal contactsGLOBALFOUNDRIES INC·Filed 2017·Granted Sep 25, 2018·14 cites·15 claims
- 1496US7713823B2Semiconductor device with vertical channel transistor and method for fabricating the sameHYNIX SEMICONDUCTOR INC·Filed 2008·Granted May 11, 2010·33 cites·13 claims
- 1595US9640533B2Methods, apparatus and system for providing source-drain epitaxy layer with lateral over-growth suppressionGLOBALFOUNDRIES INC·Filed 2015·Granted May 2, 2017·14 cites·8 claims
- 1695US8101480B1Methods of forming transistors and CMOS semiconductor devices using an SMT techniqueKIM SEOK-HOON·Filed 2010·Granted Jan 24, 2012·34 cites·40 claims
- 1795US6506676B2Method of manufacturing semiconductor devices with titanium aluminum nitride work functionHYNIX SEMICONDUCTOR INC·Filed 2001·Granted Jan 14, 2003·98 cites·21 claims
- 1894US9761662B1Active area shapes reducing device sizeGLOBALFOUNDRIES INC·Filed 2017·Granted Sep 12, 2017·9 cites·14 claims
- 1994US9093298B2Silicide formation due to improved SiGe facetingTEXAS INSTRUMENTS INC·Filed 2013·Granted Jul 28, 2015·14 cites·12 claims
- 2091US10141446B2Formation of bottom junction in vertical FET devicesGLOBALFOUNDRIES INC·Filed 2017·Granted Nov 27, 2018·5 cites·13 claims
- 2191US9236452B2Raised source/drain EPI with suppressed lateral EPI overgrowthGLOBALFOUNDRIES INC·Filed 2014·Granted Jan 12, 2016·10 cites·15 claims
- 2290US9847418B1Methods of forming fin cut regions by oxidizing fin portionsGLOBALFOUNDRIES INC·Filed 2016·Granted Dec 19, 2017·6 cites·20 claims
- 2390US9236308B1Methods of fabricating fin structures of uniform heightGLOBALFOUNDRIES INC·Filed 2014·Granted Jan 12, 2016·9 cites·18 claims
- 2489US8237220B2Semiconductor device with vertical channel transistorSUNG MIN-GYU·Filed 2010·Granted Aug 7, 2012·8 cites·10 claims
- 2588US9543215B2Punch-through-stop after partial fin etchGLOBALFOUNDRIES INC·Filed 2015·Granted Jan 10, 2017·5 cites·15 claims
- 2688US8865542B2Embedded polysilicon resistor in integrated circuits formed by a replacement gate processTEXAS INSTRUMENTS INC·Filed 2013·Granted Oct 21, 2014·9 cites·13 claims
- 2788US7563726B2Semiconductor device with multiple gate dielectric layers and method for fabricating the sameHYNIX SEMICONDUCTOR INC·Filed 2005·Granted Jul 21, 2009·14 cites·7 claims
- 2887US9842933B1Formation of bottom junction in vertical FET devicesGLOBALFOUNDRIES INC·Filed 2016·Granted Dec 12, 2017·4 cites·14 claims
- 2987US9263446B1Methods of forming replacement gate structures on transistor devices with a shared gate structure and the resulting productsGLOBALFOUNDRIES INC·Filed 2014·Granted Feb 16, 2016·7 cites·20 claims
- 3087US7112486B2Method for fabricating semiconductor device by using radical oxidationHYNIX SEMICONDUCTOR INC·Filed 2004·Granted Sep 26, 2006·47 cites·18 claims
- 3186US9812452B2Method to form silicide and contact at embedded epitaxial facetTEXAS INSTRUMENTS INC·Filed 2016·Granted Nov 7, 2017·4 cites·17 claims
- 3286US7629219B2Method of fabricating a dual polysilicon gate of a semiconductor device with a multi-plane channelHYNIX SEMICONDUCTOR INC·Filed 2006·Granted Dec 8, 2009·8 cites·24 claims
- 3385US7666785B2Method for fabricating semiconductor device with interface barrierHYNIX SEMICONDUCTOR INC·Filed 2008·Granted Feb 23, 2010·12 cites·19 claims
- 3482US9929236B1Active area shapes reducing device sizeGLOBALFOUNDRIES INC·Filed 2017·Granted Mar 27, 2018·3 cites·20 claims
- 3582US9362279B1Contact formation for semiconductor deviceGLOBALFOUNDRIES INC·Filed 2015·Granted Jun 7, 2016·3 cites·16 claims
- 3682US7029999B2Method for fabricating transistor with polymetal gate electrodeHYNIX SEMICONDUCTOR INC·Filed 2003·Granted Apr 18, 2006·30 cites·17 claims
- 3782US6642132B2Cmos of semiconductor device and method for manufacturing the sameHYNIX SEMICONDUCTOR INC·Filed 2002·Granted Nov 4, 2003·25 cites·11 claims
- 3881US6734113B1Method for forming multiple gate oxide layersHYNIX SEMICONDUCTOR INC·Filed 2003·Granted May 11, 2004·25 cites·7 claims
- 3980US6768179B2CMOS of semiconductor device and method for manufacturing the sameHYNIX SEMICONDUCTOR INC·Filed 2003·Granted Jul 27, 2004·21 cites·6 claims
- 4079US10529724B2Method of manufacturing a vertical SRAM with cross-coupled contacts penetrating through common gate structuresGLOBALFOUNDRIES INC·Filed 2018·Granted Jan 7, 2020·2 cites·20 claims
- 4178US10163900B2Integration of vertical field-effect transistors and saddle fin-type field effect transistorsGLOBALFOUNDRIES INC·Filed 2017·Granted Dec 25, 2018·2 cites·7 claims
- 4278US8759906B2Semiconductor device having vertical channel transistor and method for fabricating the sameSUNG MIN-GYU·Filed 2008·Granted Jun 24, 2014·6 cites·14 claims
- 4378US7541269B2Method of forming tungsten polymetal gate having low resistanceHYNIX SEMICONDUCTOR INC·Filed 2007·Granted Jun 2, 2009·8 cites·21 claims
- 4477US8441079B2Semiconductor device with gate stack structureLIM KWAN-YONG·Filed 2011·Granted May 14, 2013·3 cites·15 claims
- 4576US10243073B2Vertical channel field-effect transistor (FET) process compatible long channel transistorsIBM·Filed 2016·Granted Mar 26, 2019·2 cites·10 claims
- 4676US7902614B2Semiconductor device with gate stack structureHYNIX SEMICONDUCTOR INC·Filed 2007·Granted Mar 8, 2011·4 cites·11 claims
- 4776US7687389B2Method for fabricating semiconductor deviceHYNIX SEMICONDUCTOR INC·Filed 2006·Granted Mar 30, 2010·6 cites·10 claims
- 4876US7528042B2Method for fabricating semiconductor devices having dual gate oxide layerHYNIX SEMICONDUCTOR INC·Filed 2006·Granted May 5, 2009·4 cites·4 claims
- 4976US6828185B2CMOS of semiconductor device and method for manufacturing the sameHYNIX SEMICONDUCTOR INC·Filed 2002·Granted Dec 7, 2004·20 cites·3 claims
- 5075US8865549B2Recessed channel insulated-gate field effect transistor with self-aligned gate and increased channel lengthTEXAS INSTRUMENTS INC·Filed 2012·Granted Oct 21, 2014·3 cites·6 claims
Showing the top 50 of 123 patent records by PatentIndex Score.
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