Inventor · disambiguated record
Suzette K. Pangrle
Also filed as: PANGRLE SUZETTE · PANGRLE SUZETTE K · PANGRLE SUZETTE KEEFE
73 granted patents·4 pending applications·2,104 citations·filing 1998–2015
99Inventor score
Top patents by PatentIndex Score
77 records- 0198US7391064B1Memory device with a selection element and a control line in a substantially similar layerSPANSION LLC·Filed 2004·Granted Jun 24, 2008·110 cites·11 claims
- 0297US7035141B1Diode array architecture for addressing nanoscale resistive memory arraysSPANSION LLC·Filed 2004·Granted Apr 25, 2006·111 cites·5 claims
- 0397US6509267B1Method of forming low resistance barrier on low k interconnect with electrolessly plated copper seed layerADVANCED MICRO DEVICES INC·Filed 2001·Granted Jan 21, 2003·156 cites·11 claims
- 0494US6746971B1Method of forming copper sulfide for memory cellADVANCED MICRO DEVICES INC·Filed 2002·Granted Jun 8, 2004·120 cites·20 claims
- 0594US6566283B1Silane treatment of low dielectric constant materials in semiconductor device manufacturingADVANCED MICRO DEVICES INC·Filed 2002·Granted May 20, 2003·72 cites·18 claims
- 0694US6468894B1Metal interconnection structure with dummy viasADVANCED MICRO DEVICES INC·Filed 2001·Granted Oct 22, 2002·109 cites·11 claims
- 0793US7776682B1Ordered porosity to direct memory element formationSPANSION LLC·Filed 2005·Granted Aug 17, 2010·32 cites·20 claims
- 0893US6723635B1Protection low-k ILD during damascene processing with thin linerADVANCED MICRO DEVICES INC·Filed 2002·Granted Apr 20, 2004·65 cites·15 claims
- 0993US6656763B1Spin on polymers for organic memory devicesADVANCED MICRO DEVICES INC·Filed 2003·Granted Dec 2, 2003·98 cites·20 claims
- 1092US7309650B1Memory device having a nanocrystal charge storage region and methodSPANSION LLC·Filed 2005·Granted Dec 18, 2007·22 cites·22 claims
- 1192US6475929B1Method of manufacturing a semiconductor structure with treatment to sacrificial stop layer producing diffusion to an adjacent low-k dielectric layer lowering the constantADVANCED MICRO DEVICES INC·Filed 2001·Granted Nov 5, 2002·70 cites·18 claims
- 1291US6756672B1Use of sic for preventing copper contamination of low-k dielectric layersADVANCED MICRO DEVICES INC·Filed 2001·Granted Jun 29, 2004·65 cites·7 claims
- 1390US6787458B1Polymer memory device formed in via openingADVANCED MICRO DEVICES INC·Filed 2003·Granted Sep 7, 2004·63 cites·20 claims
- 1490US6753247B1Method(s) facilitating formation of memory cell(s) and patterned conductiveADVANCED MICRO DEVICES INC·Filed 2002·Granted Jun 22, 2004·53 cites·26 claims
- 1590US6174743B1Method of reducing incidence of stress-induced voiding in semiconductor interconnect linesADVANCED MICRO DEVICES INC·Filed 1998·Granted Jan 16, 2001·114 cites·6 claims
- 1689US6770905B1Implantation for the formation of CuX layer in an organic memory deviceADVANCED MICRO DEVICES INC·Filed 2002·Granted Aug 3, 2004·56 cites·20 claims
- 1788US6977389B2Planar polymer memory deviceADVANCED MICRO DEVICES INC·Filed 2003·Granted Dec 20, 2005·51 cites·28 claims
- 1888US6870183B2Stacked organic memory devices and methods of operating and fabricatingADVANCED MICRO DEVICES INC·Filed 2002·Granted Mar 22, 2005·29 cites·31 claims
- 1987US7465956B1Stacked organic memory devices and methods of operating and fabricatingADVANCED MICRO DEVICES INC·Filed 2005·Granted Dec 16, 2008·11 cites·11 claims
- 2087US6599839B1Plasma etch process for nonhomogenous filmADVANCED MICRO DEVICES INC·Filed 2001·Granted Jul 29, 2003·36 cites·10 claims
- 2186US7335594B1Method for manufacturing a memory device having a nanocrystal charge storage regionSPANSION LLC·Filed 2005·Granted Feb 26, 2008·13 cites·19 claims
- 2286US6143672AMethod of reducing metal voidings in 0.25 μm AL interconnectADVANCED MICRO DEVICES INC·Filed 1998·Granted Nov 7, 2000·65 cites·17 claims
- 2385US7378310B1Method for manufacturing a memory device having a nanocrystal charge storage regionSPANSION LLC·Filed 2005·Granted May 27, 2008·12 cites·20 claims
- 2485US6555461B1Method of forming low resistance barrier on low k interconnectADVANCED MICRO DEVICES INC·Filed 2001·Granted Apr 29, 2003·40 cites·11 claims
- 2585US6518646B1Semiconductor device with variable composition low-k inter-layer dielectric and method of makingADVANCED MICRO DEVICES INC·Filed 2001·Granted Feb 11, 2003·40 cites·14 claims
- 2684US6836017B2Protection of low-k ILD during damascene processing with thin linerADVANCED MICRO DEVICES INC·Filed 2004·Granted Dec 28, 2004·30 cites·9 claims
- 2783US6979837B2Stacked organic memory devices and methods of operating and fabricatingADVANCED MICRO DEVICES INC·Filed 2004·Granted Dec 27, 2005·19 cites·19 claims
- 2881US6713382B1Vapor treatment for repairing damage of low-k dielectricADVANCED MICRO DEVICES INC·Filed 2002·Granted Mar 30, 2004·37 cites·10 claims
- 2979US6852586B1Self assembly of conducting polymer for formation of polymer memory cellADVANCED MICRO DEVICES INC·Filed 2003·Granted Feb 8, 2005·26 cites·8 claims
- 3079US6294460B1Semiconductor manufacturing method using a high extinction coefficient dielectric photomaskADVANCED MICRO DEVICES INC·Filed 2000·Granted Sep 25, 2001·28 cites·14 claims
- 3176US9153517B2Electrical connector between die pad and z-interconnect for stacked die assembliesCO REYNALDO·Filed 2011·Granted Oct 6, 2015·5 cites·19 claims
- 3276US7468525B2Test structures for development of metal-insulator-metal (MIM) devicesSPANSION LLC·Filed 2006·Granted Dec 23, 2008·4 cites·8 claims
- 3375US5986344AAnti-reflective coating layer for semiconductor deviceADVANCED MICRO DEVICES INC·Filed 1998·Granted Nov 16, 1999·44 cites·4 claims
- 3474US6869878B1Method of forming a selective barrier layer using a sacrificial layerADVANCED MICRO DEVICES INC·Filed 2003·Granted Mar 22, 2005·20 cites·25 claims
- 3573US8912661B2Stacked die assembly having reduced stress electrical interconnectsMCGRATH SCOTT·Filed 2010·Granted Dec 16, 2014·5 cites·24 claims
- 3673US8093698B2Gettering/stop layer for prevention of reduction of insulating oxide in metal-insulator-metal deviceRATHOR MANUJ·Filed 2006·Granted Jan 10, 2012·6 cites·15 claims
- 3772US6660619B1Dual damascene metal interconnect structure with dielectric studsADVANCED MICRO DEVICES INC·Filed 2002·Granted Dec 9, 2003·18 cites·13 claims
- 3871US9508689B2Electrical connector between die pad and z-interconnect for stacked die assembliesINVENSAS CORP·Filed 2015·Granted Nov 29, 2016·2 cites·18 claims
- 3971US6943096B1Semiconductor component and method of manufactureADVANCED MICRO DEVICES INC·Filed 2003·Granted Sep 13, 2005·13 cites·15 claims
- 4070US6326692B1Insulating and capping structure with preservation of the low dielectric constant of the insulating layerADVANCED MICRO DEVICES INC·Filed 2000·Granted Dec 4, 2001·16 cites·10 claims
- 4169US6383950B1Insulating and capping structure with preservation of the low dielectric constant of the insulating layerADVANCED MICRO DEVICES INC·Filed 2001·Granted May 7, 2002·15 cites·11 claims
- 4268US6784095B1Phosphine treatment of low dielectric constant materials in semiconductor device manufacturingADVANCED MICRO DEVICES INC·Filed 2002·Granted Aug 31, 2004·14 cites·14 claims
- 4367US8003436B2Stacked organic memory devices and methods of operating and fabricatingSPANSION LLC·Filed 2008·Granted Aug 23, 2011·2 cites·20 claims
- 4467US6380067B1Method for creating partially UV transparent anti-reflective coating for semiconductorsADVANCED MICRO DEVICES INC·Filed 2000·Granted Apr 30, 2002·11 cites·11 claims
- 4567US6136649AMethod for removing anti-reflective coating layer using plasma etch process after contact CMPADVANCED MICRO DEVICES INC·Filed 1999·Granted Oct 24, 2000·32 cites·20 claims
- 4664US7232765B1Utilization of a Ta-containing cap over copper to facilitate concurrent formation of copper vias and memory element structuresADVANCED MICRO DEVICES INC·Filed 2004·Granted Jun 19, 2007·11 cites·20 claims
- 4763US8012673B1Processing a copolymer to form a polymer memory cellSPANSION LLC·Filed 2005·Granted Sep 6, 2011·1 cites·20 claims
- 4863US7566628B2Process for making a resistive memory cell with separately patterned electrodesSPANSION LLC·Filed 2007·Granted Jul 28, 2009·4 cites·18 claims
- 4963US6472336B1Forming an encapsulating layer after deposition of a dielectric comprised of corrosive materialADVANCED MICRO DEVICES INC·Filed 2000·Granted Oct 29, 2002·9 cites·11 claims
- 5060US8803120B2Diode and resistive memory device structuresRATHOR MANUJ·Filed 2011·Granted Aug 12, 2014·1 cites·4 claims
Showing the top 50 of 77 patent records by PatentIndex Score.
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