Inventor · disambiguated record
Erwin Hijzen
Also filed as: HIJZEN ERWIN · HIJZEN ERWIN A · HIJZEN ERWIN ADOLF
45 granted patents·4 pending applications·926 citations·filing 1998–2015
98Inventor score
Files withNXP BV21KONINKL PHILIPS ELECTRONICS NV16PHILIPS CORP5MEUNIER-BEILLARD PHILIPPE2HIJZEN ERWIN1
Top patents by PatentIndex Score
49 records- 0197US6359308B1Cellular trench-gate field-effect transistorsPHILIPS CORP·Filed 2000·Granted Mar 19, 2002·255 cites·10 claims
- 0294US6441454B2Trenched Schottky rectifiersKONINKL PHILIPS ELECTRONICS NV·Filed 2001·Granted Aug 27, 2002·103 cites·13 claims
- 0392US7538337B2Nanowire semiconductor deviceNXP BV·Filed 2005·Granted May 26, 2009·23 cites·17 claims
- 0492US6368921B1Manufacture of trench-gate semiconductor devicesPHILIPS CORP·Filed 2000·Granted Apr 9, 2002·112 cites·10 claims
- 0591US6498071B2Manufacture of trench-gate semiconductor devicesKONINK PHILIPS ELECTRONICS N·Filed 2000·Granted Dec 24, 2002·83 cites·8 claims
- 0688US7033889B2Trenched semiconductor devices and their manufactureKONINKL PHILIPS ELECTRONICS NV·Filed 2005·Granted Apr 25, 2006·15 cites·6 claims
- 0785US6936890B2Edge termination in MOS transistorsKONINKL PHILIPS ELECTRONICS NV·Filed 2002·Granted Aug 30, 2005·32 cites·16 claims
- 0885US6600194B2Field-effect semiconductor devicesKONINKL PHILIPS ELECTRONICS NV·Filed 2001·Granted Jul 29, 2003·40 cites·8 claims
- 0984US8373236B2Semiconductor device and method of manufacturing such a deviceNXP BV·Filed 2007·Granted Feb 12, 2013·15 cites·21 claims
- 1083US7671390B2Semiconductor device and method for manufactureNXP BV·Filed 2005·Granted Mar 2, 2010·11 cites·15 claims
- 1178US6534823B2Semiconductor deviceKONINKL PHILIPS ELECTRONICS NV·Filed 2001·Granted Mar 18, 2003·25 cites·12 claims
- 1278US6515348B2Semiconductor device with FET MESA structure and vertical contact electrodesKONINKL PHILIPS ELECTRONICS NV·Filed 2001·Granted Feb 4, 2003·25 cites·20 claims
- 1377US7394144B2Trench semiconductor device and method of manufacturing itNXP BV·Filed 2005·Granted Jul 1, 2008·8 cites·14 claims
- 1476US6833583B2Edge termination in a trench-gate MOSFETKONINKL PHILIPS ELECTRONICS NV·Filed 2002·Granted Dec 21, 2004·20 cites·7 claims
- 1576US6620669B2Manufacture of trench-gate semiconductor devicesKONINKL PHILIPS ELECTRONICS NV·Filed 2002·Granted Sep 16, 2003·24 cites·14 claims
- 1675US6780714B2Semiconductor devices and their manufactureKONINKL PHILIPS ELECTRONICS NV·Filed 2002·Granted Aug 24, 2004·23 cites·19 claims
- 1771US8476675B2Semiconductor device and method of manufacture thereofMEUNIER-BEILLARD PHILIPPE·Filed 2009·Granted Jul 2, 2013·4 cites·14 claims
- 1865US8431966B2Method of manufacturing a bipolar transistor semiconductor device and semiconductor devices obtained therebyMEUNIER-BEILLARD PHILIPPE·Filed 2009·Granted Apr 30, 2013·3 cites·15 claims
- 1965US6597052B2Punch-through diode having an inverted structureKONINKL PHILIPS ELECTRONICS NV·Filed 2001·Granted Jul 22, 2003·12 cites·5 claims
- 2065US6518129B2Manufacture of trench-gate semiconductor devicesKONINKL PHILIPS ELECTRONICS NV·Filed 2001·Granted Feb 11, 2003·16 cites·15 claims
- 2164US6521498B2Manufacture or trench-gate semiconductor devicesKONINKL PHILIPS ELECTRONICS NV·Filed 2002·Granted Feb 18, 2003·15 cites·15 claims
- 2261US7867864B2Method of manufacturing a semiconductor device and semiconductor device obtained with such a methodNXP BV·Filed 2007·Granted Jan 11, 2011·2 cites·11 claims
- 2360US7262460B2Vertical insulated gate transistor and manufacturing methodNXP BV·Filed 2003·Granted Aug 28, 2007·7 cites·11 claims
- 2458US7956399B2Semiconductor device with low buried resistance and method of manufacturing such a deviceNXP BV·Filed 2006·Granted Jun 7, 2011·1 cites·18 claims
- 2558US7659169B2Semiconductor device and method of manufacturing thereofNXP BV·Filed 2005·Granted Feb 9, 2010·2 cites·9 claims
- 2656US7868424B2Semiconductor device and method of manufacturing the sameNXP BV·Filed 2005·Granted Jan 11, 2011·1 cites·20 claims
- 2755US7332398B2Manufacture of trench-gate semiconductor devicesNXP BV·Filed 2003·Granted Feb 19, 2008·7 cites·11 claims
- 2854US7696599B2Trench MOSFETNXP BV·Filed 2004·Granted Apr 13, 2010·6 cites·14 claims
- 2953US6559502B2Semiconductor deviceKONINKL PHILIPS ELECTRONICS NV·Filed 2001·Granted May 6, 2003·6 cites·9 claims
- 3051US6956264B2Trenched semiconductor devices and their manufactureKONINKL PHILIPS ELECTRONICS NV·Filed 2002·Granted Oct 18, 2005·4 cites·7 claims
- 3149US7671440B2Lateral field-effect transistor having an insulated trench gate electrodeNXP BV·Filed 2004·Granted Mar 2, 2010·2 cites·15 claims
- 3249US7160793B2Edge termination in MOS transistorsNXP BV·Filed 2005·Granted Jan 9, 2007·0 cites·3 claims
- 3348US9508693B2Semiconductor device with heat sinksNXP BV·Filed 2014·Granted Nov 29, 2016·0 cites·15 claims
- 3448US7235842B2Insulated gate power semiconductor devicesNXP BV·Filed 2003·Granted Jun 26, 2007·4 cites·13 claims
- 3547US7199010B2Method of maufacturing a trench-gate semiconductor deviceNXP BV·Filed 2003·Granted Apr 3, 2007·3 cites·10 claims
- 3646US9666598B2Semiconductor device with an integrated heat sink arrayNXP BV·Filed 2014·Granted May 30, 2017·0 cites·15 claims
- 3744US7629647B2Trench MOS structureNXP BV·Filed 2004·Granted Dec 8, 2009·2 cites·16 claims
- 3843US7485534B2Method of manufacture of a trench-gate semiconductor deviceNXP BV·Filed 2003·Granted Feb 3, 2009·1 cites·13 claims
- 3942US6064074ASemiconductor cathode and electron tube comprising a semiconductor cathodePHILIPS CORP·Filed 1998·Granted May 16, 2000·6 cites·9 claims
- 4041US6198210B1Electron tube having a semiconductor cathode with lower and higher bandgap layersPHILIPS CORP·Filed 1998·Granted Mar 6, 2001·4 cites·8 claims
- 4139US7915709B2Semiconductor device and method of manufacturing the sameNXP BV·Filed 2005·Granted Mar 29, 2011·0 cites·20 claims
- 4239US5880481AElectron tube having a semiconductor cathode with lower and higher bandgap layersPHILIPS CORP·Filed 1998·Granted Mar 9, 1999·4 cites·21 claims
- 4336US2009200577A1Semiconductor device and method of manufacturing such a deviceNXP BV·Filed 2006·Application pending·0 cites
- 4436US2007126055A1Trench insulated gate field effect transistorKONINKL PHILIPS ELECTRONICS NV·Filed 2004·Application pending·0 cites
- 4536US2007228496A1Vertical Semiconductor Devices and Methods of Manufacturing Such DevicesKONINKL PHILIPS ELECTRONICS NV·Filed 2005·Application pending·0 cites
- 4634US9762226B2Semiconductor device having control conductorsNexperia BV·Filed 2015·Granted Sep 12, 2017·0 cites·18 claims
- 4734US2007120254A1Semiconductor device comprising a pn-heterojunctionKONINK PHILIPS ELECTRONICS N C·Filed 2004·Application pending·0 cites
- 4832US8450823B2Integrated circuit with grating and manufacturing method thereforHIJZEN ERWIN·Filed 2009·Granted May 28, 2013·0 cites·19 claims
- 4932US8173511B2Method of manufacturing a semiconductor device and semiconductor device obtained with such a methodMELAI JOOST·Filed 2006·Granted May 8, 2012·0 cites·11 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →