Inventor · disambiguated record
Chi-Yuan Wen
Also filed as: WEN CHI-YUAN
17 granted patents·4 pending applications·53 citations·filing 2009–2025
91Inventor score
Top patents by PatentIndex Score
21 records- 0196US9985072B1CMOS image sensor with dual damascene grid design having absorption enhancement structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted May 29, 2018·21 cites·20 claims
- 0295US10553733B2QE approach by double-side, multi absorption structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Feb 4, 2020·12 cites·19 claims
- 0393US10879406B2QE approach by double-side, multi absorption structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Dec 29, 2020·3 cites·20 claims
- 0490US10211244B2Image sensor device with reflective structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Feb 19, 2019·5 cites·19 claims
- 0586US11393937B2QE approach by double-side, multi absorption structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 19, 2022·1 cites·20 claims
- 0686US10784150B2Semiconductor structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Sep 22, 2020·3 cites·20 claims
- 0784US10153319B2CMOS image sensor with dual damascene grid design having absorption enhancement structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Dec 11, 2018·3 cites·20 claims
- 0884US10056427B1Front side illuminated image sensor device structure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Aug 21, 2018·4 cites·20 claims
- 0980US2025329577A1Semiconductor structure with junction leakage reductionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1078US11990493B2Image sensor device with reflective structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted May 21, 2024·0 cites·20 claims
- 1174US10707361B2QE approach by double-side, multi absorption structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Jul 7, 2020·0 cites·20 claims
- 1271US11342372B2Image sensor device with reflective layerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted May 24, 2022·0 cites·20 claims
- 1371US10734427B2Method for forming image sensor deviceTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2019·Granted Aug 4, 2020·0 cites·20 claims
- 1470US12368070B2LDMOS device having isolation regions comprising DTI regions extending from a bottom of STI regionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Jul 22, 2025·0 cites·20 claims
- 1569US9984918B2Semiconductor structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2016·Granted May 29, 2018·1 cites·17 claims
- 1659US10276427B2Semiconductor structure and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2018·Granted Apr 30, 2019·0 cites·20 claims
- 1758US2025261387A1Semiconductor structure and method of manufactureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1847US2016372360A1Semiconductor structure with junction leakage reductionTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2015·Application pending·0 cites
- 1945US8293649B2Release accumulative charges on wafers using O2 neutralizationLIN TING-YI·Filed 2009·Granted Oct 23, 2012·0 cites·21 claims
- 2037US8263495B2Release accumulative charges by tuning ESC voltages in via-etchersLIN TING-YI·Filed 2009·Granted Sep 11, 2012·0 cites·14 claims
- 2135US2015258937A1Vehicle with blind spot monitor deviceWEN CHI-YUAN·Filed 2015·Application pending·0 cites
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