Inventor · disambiguated record
Michel Marty
Also filed as: MARTY MICHEL
63 granted patents·9 pending applications·1,104 citations·filing 1984–2017
99Inventor score
Files withST MICROELECTRONICS SA46MARTY MICHEL4ONERA (OFF NAT AEROSPATIALE)3ST MICROELECTRONICS CROLLES 23COMMISSARIAT L ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES2
Top patents by PatentIndex Score
72 records- 0198US9640704B2High quantum efficiency photodetectorCOMMISSARIAT L ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES·Filed 2016·Granted May 2, 2017·41 cites·10 claims
- 0298US6031445ATransformer for integrated circuitsST MICROELECTRONICS SA·Filed 1998·Granted Feb 29, 2000·317 cites·18 claims
- 0394US6828646B2Isolating trench and manufacturing processST MICROELECTRONICS SA·Filed 2002·Granted Dec 7, 2004·96 cites·21 claims
- 0493US9520435B2Image sensor illuminated and connected on its back sideST MICROELECTRONICS SA·Filed 2015·Granted Dec 13, 2016·15 cites·14 claims
- 0589US8704282B2Method for forming a back-side illuminated image sensorMARTY MICHEL·Filed 2012·Granted Apr 22, 2014·7 cites·20 claims
- 0688US7038289B2Deep insulating trenchKONINKL PHILIPS ELECTRONICS NV·Filed 2002·Granted May 2, 2006·54 cites·20 claims
- 0786US4593454AProcess for manufacturing an integrated circuit with tantalum silicide connections utilizing self-aligned oxidationEFCIS·Filed 1984·Granted Jun 10, 1986·61 cites·9 claims
- 0885US6465317B2Process for producing a bipolar transistor with self-aligned emitter and extrinsic baseST MICROELECTRONICS SA·Filed 2001·Granted Oct 15, 2002·38 cites·37 claims
- 0985US5104614ASuperalloy compositions with a nickel baseSNECMA·Filed 1986·Granted Apr 14, 1992·40 cites·2 claims
- 1083US9685472B2Image sensor with reduced spectral and optical crosstalk and method for making the image sensorST MICROELECTRONICS SA·Filed 2016·Granted Jun 20, 2017·4 cites·20 claims
- 1183US9231014B2Back side illumination photodiode of high quantum efficiencyST MICROELECTRONICS SA·Filed 2014·Granted Jan 5, 2016·2 cites·20 claims
- 1283US8981516B2Back-side illuminated image sensor provided with a transparent electrodePRIMA JENS·Filed 2012·Granted Mar 17, 2015·5 cites·17 claims
- 1382US7470559B2Semiconductor component comprising a buried mirrorST MICROELECTRONICS SA·Filed 2005·Granted Dec 30, 2008·6 cites·5 claims
- 1482US6177717B1Low-noise vertical bipolar transistor and corresponding fabrication processST MICROELECTRONICS SA·Filed 1999·Granted Jan 23, 2001·62 cites·16 claims
- 1581US9299865B2Spad photodiode of high quantum efficiencyST MICROELECTRONICS CROLLES 2·Filed 2014·Granted Mar 29, 2016·5 cites·20 claims
- 1681US7687833B2Component containing a baw filterST MICROELECTRONICS SA·Filed 2007·Granted Mar 30, 2010·11 cites·16 claims
- 1780US6972451B2Trench capacitor in a substrate with two floating electrodes independent from the substrateST MICROELECTRONICS SA·Filed 2003·Granted Dec 6, 2005·29 cites·34 claims
- 1879US8436440B2Method for forming a back-side illuminated image sensorMARTY MICHEL·Filed 2010·Granted May 7, 2013·6 cites·20 claims
- 1977US8735208B2Method for forming a back-side illuminated image sensorROY FRANÇOIS·Filed 2012·Granted May 27, 2014·1 cites·11 claims
- 2077US7456071B2Method for forming a strongly-conductive buried layer in a semiconductor substrateST MICROELECTRONICS SA·Filed 2005·Granted Nov 25, 2008·6 cites·31 claims
- 2177US6551891B1Process for fabricating a self-aligned vertical bipolar transistorST MICROELECTRONICS SA·Filed 2000·Granted Apr 22, 2003·21 cites·22 claims
- 2276US9985119B2Image sensor with reduced spectral and optical crosstalk and method for making the image sensorST MICROELECTRONICS SA·Filed 2017·Granted May 29, 2018·2 cites·22 claims
- 2375US9397128B2Process for forming a stack of different materials, and device comprising this stackST MICROELECTRONICS SA·Filed 2014·Granted Jul 19, 2016·2 cites·24 claims
- 2475US6265275B1Method of selectively doping the intrinsic collector of a vertical bipolar transistor with epitaxial baseST MICROELECTRONICS SA·Filed 1999·Granted Jul 24, 2001·38 cites·11 claims
- 2574US6316818B1Vertical bipolar transistor including an extrinsic base with reduced roughness, and fabrication processST MICROELECTRONICS SA·Filed 1999·Granted Nov 13, 2001·30 cites·3 claims
- 2671US8963273B2Back-side illuminated image sensor with a junction insulationST MICROELECTRONICS SA·Filed 2014·Granted Feb 24, 2015·0 cites·8 claims
- 2769US9171973B2Method for producing an integrated imaging device with front face illumination comprising at least one metal optical filter, and corresponding deviceST MICROELECTRONICS CROLLES 2·Filed 2014·Granted Oct 27, 2015·2 cites·19 claims
- 2868US9450000B2Photodiode of high quantum efficiencyST MICROELECTRONICS CROLLES 2 SAS·Filed 2014·Granted Sep 20, 2016·2 cites·13 claims
- 2966US6081030ASemiconductor device having separated exchange meansST MICROELECTRONICS SA·Filed 1998·Granted Jun 27, 2000·33 cites·19 claims
- 3065US8703528B2Method for forming a back-side illuminated image sensor with a junction insulationMARTY MICHEL·Filed 2012·Granted Apr 22, 2014·0 cites·5 claims
- 3162US7691727B2Method for manufacturing an integrated circuit with fully depleted and partially depleted transistorsST MICROELECTRONICS SA·Filed 2007·Granted Apr 6, 2010·2 cites·15 claims
- 3261US7476574B2Method for forming an integrated circuit semiconductor substrateST MICROELECTRONICS SA·Filed 2006·Granted Jan 13, 2009·2 cites·10 claims
- 3361US6436782B2Process for fabricating a self-aligned double-polysilicon bipolar transistorST MICROELECTRONICS SA·Filed 2001·Granted Aug 20, 2002·10 cites·18 claims
- 3461US5976898ALocalization of defects of a metallic layer of a semiconductor circuitST MICROELECTRONICS SA·Filed 1996·Granted Nov 2, 1999·22 cites·19 claims
- 3559US4601874AProcess for forming a titanium base alloy with small grain size by powder metallurgyONERA (OFF NAT AEROSPATIALE)·Filed 1985·Granted Jul 22, 1986·14 cites·6 claims
- 3658US6100595ASemiconductor device having optoelectronic remote signal-exchange meansST MICROELECTRONICS SA·Filed 1998·Granted Aug 8, 2000·24 cites·18 claims
- 3757US9214485B2Thick multilayer interference filter having a lower metal layer located within an interconnect regionST MICROELECTRONICS SA·Filed 2014·Granted Dec 15, 2015·0 cites·16 claims
- 3857US2008272418A1Semiconductor component comprising a buried mirrorST MICROELECTRONICS SA·Filed 2008·Application pending·0 cites
- 3956US7902621B2Integrated circuit comprising mirrors buried at different depthsST MICROELECTRONICS SA·Filed 2009·Granted Mar 8, 2011·0 cites·13 claims
- 4055US6656812B1Vertical bipolar transistor having little low-frequency noise and high current gain, and corresponding fabrication processST MICROELECTRONICS SA·Filed 2000·Granted Dec 2, 2003·8 cites·14 claims
- 4155US6136640AProcess for fabricating a metal-metal capacitor within an integrated circuit, and corresponding integrated circuitST MICROELECTRONICS SA·Filed 1998·Granted Oct 24, 2000·17 cites·14 claims
- 4254US6642096B2Bipolar transistor manufacturingST MICROELECTRONICS SA·Filed 2001·Granted Nov 4, 2003·6 cites·22 claims
- 4354US4714951AIntegrated circuit device which includes a continous layer which consists of conducting portions which are of a silicide of a refractory metal and insulating portions which are of an oxide of the metalFABRICATION DE CIRCUITS INTEGR·Filed 1986·Granted Dec 22, 1987·21 cites·7 claims
- 4452US9530817B2Back side illumination photodiode of high quantum efficiencyST MICROELECTRONICS SA·Filed 2015·Granted Dec 27, 2016·0 cites·15 claims
- 4551US5486242ANiobium or tantalum based high specific strength inter metallic compounds and alloysONERA (OFF NAT AEROSPATIALE)·Filed 1995·Granted Jan 23, 1996·13 cites·4 claims
- 4650US6653182B2Process for forming deep and shallow insulative regions of an integrated circuitST MICROELECTRONICS SA·Filed 2001·Granted Nov 25, 2003·3 cites·16 claims
- 4749US9052560B2Nanoprojector panel formed of an array of liquid crystal cellsST MICROELECTRONICS SA·Filed 2013·Granted Jun 9, 2015·0 cites·8 claims
- 4848US7115465B2Method for manufacturing a bipolar transistorST MICROELECTRONICS SA·Filed 2004·Granted Oct 3, 2006·5 cites·18 claims
- 4947US7824978B2Bipolar transistor with high dynamic performancesST MICROELECTRONICS SA·Filed 2006·Granted Nov 2, 2010·0 cites·19 claims
- 5046US9219095B2Method for producing an optical filter in an integrated circuit, and corresponding integrated circuitST MICROELECTRONICS SA·Filed 2014·Granted Dec 22, 2015·0 cites·23 claims
Showing the top 50 of 72 patent records by PatentIndex Score.
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