Inventor · disambiguated record
Karen E. Moore
Also filed as: MOORE KAREN · MOORE KAREN E · MOORE KAREN ELIZABETH
26 granted patents·1 pending application·218 citations·filing 1995–2020
95Inventor score
Top patents by PatentIndex Score
27 records- 0197US9799760B2Semiconductor device with selectively etched surface passivationFREESCALE SEMICONDUCTOR INC·Filed 2015·Granted Oct 24, 2017·17 cites·18 claims
- 0293US5885860ASilicon carbide transistor and methodMOTOROLA INC·Filed 1997·Granted Mar 23, 1999·100 cites·18 claims
- 0387US9685345B2Semiconductor devices with integrated Schottky diodes and methods of fabricationGREEN BRUCE M·Filed 2013·Granted Jun 20, 2017·6 cites·19 claims
- 0486US8946776B2Semiconductor device with selectively etched surface passivationGREEN BRUCE M·Filed 2012·Granted Feb 3, 2015·6 cites·18 claims
- 0582US9276101B2High speed gallium nitride transistor devicesFREESCALE SEMICONDUCTOR INC·Filed 2015·Granted Mar 1, 2016·3 cites·20 claims
- 0681US9099433B2High speed gallium nitride transistor devicesGREEN BRUCE M·Filed 2012·Granted Aug 4, 2015·5 cites·16 claims
- 0780US10541324B2Semiconductor device with a recessed ohmic contact and methods of fabricationNXP USA INC·Filed 2017·Granted Jan 21, 2020·2 cites·15 claims
- 0879US7935620B2Method for forming semiconductor devices with low leakage Schottky contactsFREESCALE SEMICONDUCTOR INC·Filed 2007·Granted May 3, 2011·6 cites·18 claims
- 0978US9153448B2Semiconductor device with selectively etched surface passivationGREEN BRUCE M·Filed 2015·Granted Oct 6, 2015·2 cites·20 claims
- 1077US10522670B2Semiconductor device with selectively etched surface passivationNXP USA INC·Filed 2017·Granted Dec 31, 2019·2 cites·23 claims
- 1173US9111868B2Semiconductor device with selectively etched surface passivationGREEN BRUCE M·Filed 2012·Granted Aug 18, 2015·2 cites·17 claims
- 1270US10957790B2Semiconductor device with selectively etched surface passivationNXP USA INC·Filed 2018·Granted Mar 23, 2021·1 cites·19 claims
- 1370US10825924B2Semiconductor device with selectively etched surface passivationNXP USA INC·Filed 2017·Granted Nov 3, 2020·1 cites·20 claims
- 1462US8592878B2Semiconductor devices with low leakage Schottky contactsGREEN BRUCE M·Filed 2011·Granted Nov 26, 2013·1 cites·12 claims
- 1555US6630746B1Semiconductor device and method of making the sameMOTOROLA INC·Filed 2000·Granted Oct 7, 2003·7 cites·5 claims
- 1654US9123645B2Methods of making semiconductor devices with low leakage Schottky contactsFREESCALE SEMICONDUCTOR INC·Filed 2013·Granted Sep 1, 2015·0 cites·8 claims
- 1748US11784236B2Methods for forming semiconductor devices using sacrificial capping and insulation layersNXP USA INC·Filed 2020·Granted Oct 10, 2023·0 cites·11 claims
- 1848US5933750AMethod of fabricating a semiconductor device with a thinned substrateMOTOROLA INC·Filed 1998·Granted Aug 3, 1999·14 cites·16 claims
- 1946US5641695AMethod of forming a silicon carbide JFETMOTOROLA INC·Filed 1995·Granted Jun 24, 1997·10 cites·12 claims
- 2045US6127272AMethod of electron beam lithography on very high resistivity substratesMOTOROLA INC·Filed 1998·Granted Oct 3, 2000·11 cites·22 claims
- 2144US9281204B2Method for improving E-beam lithography gate metal profile for enhanced field controlFREESCALE SEMICONDUCTOR INC·Filed 2014·Granted Mar 8, 2016·0 cites·12 claims
- 2241US6083806AMethod of forming an alignment markMOTOROLA INC·Filed 1998·Granted Jul 4, 2000·10 cites·20 claims
- 2339US5693969AMESFET having a termination layer in the channel layerMOTOROLA INC·Filed 1995·Granted Dec 2, 1997·6 cites·4 claims
- 2438US8927214B2Methods and compositions for dual extraction of protein and nucleic acidYARNALL MICHELE SUSAN·Filed 2012·Granted Jan 6, 2015·0 cites·11 claims
- 2536US2012156843A1Dielectric layer for gallium nitride transistorGREEN BRUCE M·Filed 2010·Application pending·0 cites
- 2635US6002148ASilicon carbide transistor and methodMOTOROLA INC·Filed 1995·Granted Dec 14, 1999·3 cites·5 claims
- 2734US6180495B1Silicon carbide transistor and method thereforMOTOROLA INC·Filed 1998·Granted Jan 30, 2001·3 cites·3 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →