Inventor · disambiguated record
Kaushal K. Singh
Also filed as: SINGH KAUSHAL · SINGH KAUSHAL K · SINGH KAUSHAL KISHORE
33 granted patents·14 pending applications·2,310 citations·filing 1997–2021
97Inventor score
Files withAPPLIED MATERIALS INC31SINGH KAUSHAL K6AGILENT TECHNOLOGIES INC2AHMED KHALED Z1BACHRACH ROBERT Z1
Top patents by PatentIndex Score
47 records- 0199US7651955B2Method for forming silicon-containing materials during a photoexcitation deposition processAPPLIED MATERIALS INC·Filed 2006·Granted Jan 26, 2010·533 cites·25 claims
- 0299US7648927B2Method for forming silicon-containing materials during a photoexcitation deposition processAPPLIED MATERIALS INC·Filed 2006·Granted Jan 19, 2010·497 cites·36 claims
- 0396US7601652B2Method for treating substrates and films with photoexcitationAPPLIED MATERIALS INC·Filed 2005·Granted Oct 13, 2009·486 cites·18 claims
- 0495US7645339B2Silicon-containing layer deposition with silicon compoundsAPPLIED MATERIALS INC·Filed 2006·Granted Jan 12, 2010·14 cites·31 claims
- 0595US6190233B1Method and apparatus for improving gap-fill capability using chemical and physical etchbacksAPPLIED MATERIALS INC·Filed 1998·Granted Feb 20, 2001·277 cites·11 claims
- 0695US5990000AMethod and apparatus for improving gap-fill capability using chemical and physical etchbacksAPPLIED MATERIALS INC·Filed 1997·Granted Nov 23, 1999·270 cites·14 claims
- 0791US8387557B2Method for forming silicon-containing materials during a photoexcitation deposition processSINGH KAUSHAL K·Filed 2009·Granted Mar 5, 2013·15 cites·8 claims
- 0889US7540920B2Silicon-containing layer deposition with silicon compoundsAPPLIED MATERIALS INC·Filed 2003·Granted Jun 2, 2009·31 cites·72 claims
- 0988US7978964B2Substrate processing chamber with dielectric barrier discharge lamp assemblyAPPLIED MATERIALS INC·Filed 2006·Granted Jul 12, 2011·12 cites·23 claims
- 1088US6035803AMethod and apparatus for controlling the deposition of a fluorinated carbon filmAPPLIED MATERIALS INC·Filed 1997·Granted Mar 14, 2000·94 cites·26 claims
- 1187US9613859B2Direct deposition of nickel silicide nanowireAPPLIED MATERIALS INC·Filed 2015·Granted Apr 4, 2017·5 cites·19 claims
- 1286US7262116B2Low temperature epitaxial growth of silicon-containing films using close proximity UV radiationAPPLIED MATERIALS INC·Filed 2006·Granted Aug 28, 2007·9 cites·27 claims
- 1385US8846437B2High efficiency thin film transistor device with gallium arsenide layerSINGH KAUSHAL K·Filed 2011·Granted Sep 30, 2014·9 cites·15 claims
- 1484US9879341B2Method and apparatus for microwave assisted chalcogen radicals generation for 2-D materialsAPPLIED MATERIALS INC·Filed 2016·Granted Jan 30, 2018·4 cites·20 claims
- 1584US8415556B2Copper delafossite transparent P-type semiconductor thin film devicesSINGH KAUSHAL K·Filed 2009·Granted Apr 9, 2013·8 cites·16 claims
- 1681US8582962B2Substrate processing chamber with dielectric barrier discharge lamp assemblyRANISH JOSEPH MICHAEL·Filed 2011·Granted Nov 12, 2013·6 cites·19 claims
- 1779US9905723B2Methods for plasma activation of evaporated precursors in a process chamberAPPLIED MATERIALS INC·Filed 2016·Granted Feb 27, 2018·1 cites·12 claims
- 1879US9450135B2Plasma enhanced thermal evaporatorAPPLIED MATERIALS INC·Filed 2014·Granted Sep 20, 2016·1 cites·12 claims
- 1974US8747942B2Carbon nanotube-based solar cellsNALAMASU OMKARAM·Filed 2010·Granted Jun 10, 2014·3 cites·13 claims
- 2072US6730354B2Forming ferroelectric Pb(Zr,Ti)O3 filmsAGILENT TECHNOLOGIES INC·Filed 2001·Granted May 4, 2004·15 cites·28 claims
- 2171US9780223B2Gallium arsenide based materials used in thin film transistor applicationsAPPLIED MATERIALS INC·Filed 2016·Granted Oct 3, 2017·1 cites·13 claims
- 2270US10204764B2Methods for forming a metal silicide interconnection nanowire structureAPPLIED MATERIALS INC·Filed 2014·Granted Feb 12, 2019·2 cites·13 claims
- 2369US8736947B2Materials and device stack for market viable electrochromic devicesKWAK BYUNG-SUNG LEO·Filed 2010·Granted May 27, 2014·1 cites·15 claims
- 2467US11881411B2High pressure annealing process for metal containing materialsAPPLIED MATERIALS INC·Filed 2021·Granted Jan 23, 2024·0 cites·20 claims
- 2564US7396743B2Low temperature epitaxial growth of silicon-containing films using UV radiationSINGH KAUSHAL K·Filed 2004·Granted Jul 8, 2008·7 cites·21 claims
- 2663US6617178B1Test system for ferroelectric materials and noble metal electrodes in semiconductor capacitorsAGILENT TECHNOLOGIES INC·Filed 2002·Granted Sep 9, 2003·8 cites·20 claims
- 2762US10879177B2PVD deposition and anneal of multi-layer metal-dielectric filmAPPLIED MATERIALS INC·Filed 2015·Granted Dec 29, 2020·1 cites·19 claims
- 2861US2011315186A1Method of manufacturing thin crystalline silicon solar cells using recrystallizationGEE JAMES M·Filed 2011·Application pending·0 cites
- 2960US10998200B2High pressure annealing process for metal containing materialsAPPLIED MATERIALS INC·Filed 2019·Granted May 4, 2021·0 cites·20 claims
- 3059US2010267191A1Plasma enhanced thermal evaporatorAPPLIED MATERIALS INC·Filed 2010·Application pending·0 cites
- 3157US10930472B2Methods for forming a metal silicide interconnection nanowire structureAPPLIED MATERIALS INC·Filed 2019·Granted Feb 23, 2021·0 cites·9 claims
- 3257US2010261049A1high power, high energy and large area energy storage devicesAPPLIED MATERIALS INC·Filed 2009·Application pending·0 cites
- 3355US8822259B2Methods for enhancing light absorption during PV applicationsSINGH KAUSHAL K·Filed 2011·Granted Sep 2, 2014·0 cites·10 claims
- 3455US2009320819A1Carbon nanotube fiber wire for wafer slicingBACHRACH ROBERT Z·Filed 2008·Application pending·0 cites
- 3553US2007232031A1UV assisted low temperature epitaxial growth of silicon-containing filmsAPPLIED MATERIALS INC·Filed 2007·Application pending·0 cites
- 3650US2007252299A1Synchronization of precursor pulsing and wafer rotationAPPLIED MATERIALS INC·Filed 2006·Application pending·0 cites
- 3750US2022112598A1Trap filter system for semiconductor equipmentINTEL CORP·Filed 2021·Application pending·0 cites
- 3847US2011088762A1Barrier layer disposed between a substrate and a transparent conductive oxide layer for thin film silicon solar cellsAPPLIED MATERIALS INC·Filed 2010·Application pending·0 cites
- 3945US9812328B2Methods for forming low resistivity interconnectsAPPLIED MATERIALS INC·Filed 2016·Granted Nov 7, 2017·0 cites·16 claims
- 4045US9373516B2Method and apparatus for forming gate stack on Si, SiGe or Ge channelsAHMED KHALED Z·Filed 2013·Granted Jun 21, 2016·0 cites·18 claims
- 4144US2006286774A1Method for forming silicon-containing materials during a photoexcitation deposition processAPPLIED MATERIALS INC·Filed 2006·Application pending·0 cites
- 4243US2007259111A1Method and apparatus for photo-excitation of chemicals for atomic layer deposition of dielectric filmSINGH KAUSHAL K·Filed 2006·Application pending·0 cites
- 4341US2008135914A1Nanocrystal formationKRISHNA NETY M·Filed 2007·Application pending·0 cites
- 4439US2006286819A1Method for silicon based dielectric deposition and clean with photoexcitationAPPLIED MATERIALS INC·Filed 2005·Application pending·0 cites
- 4537US10593592B2Laminate and core shell formation of silicide nanowireAPPLIED MATERIALS INC·Filed 2015·Granted Mar 17, 2020·0 cites·15 claims
- 4637US2010255660A1Sulfurization or selenization in molten (liquid) state for the photovoltaic applicationsAPPLIED MATERIALS INC·Filed 2010·Application pending·0 cites
- 4733US2002075631A1Iridium and iridium oxide electrodes used in ferroelectric capacitorsAPPLIED MATERIALS INC·Filed 2000·Application pending·0 cites
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