Inventor · disambiguated record
Yu-Jiun Peng
Also filed as: PENG YU · PENG YU-JIUN
9 granted patents·11 pending applications·13 citations·filing 2017–2025
82Inventor score
Files withTAIWAN SEMICONDUCTOR MFG CO LTD18HUAWEI TECH CO LTD1INST OF GEOLOGY AND GEOPHYSICS CHINESE ACADEMY OF SCIENCES IGGCAS1
Top patents by PatentIndex Score
20 records- 0194US11996468B2Multi-gate device fabrication and structures thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2021·Granted May 28, 2024·3 cites·20 claims
- 0289US2025357128A1Methods of forming semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0386US10955329B1Method and system for measuring pore structure of tight sandstoneINST OF GEOLOGY AND GEOPHYSICS CHINESE ACADEMY OF SCIENCES IGGCAS·Filed 2020·Granted Mar 23, 2021·5 cites·8 claims
- 0482US11398384B2Methods for manufacturing a transistor gate by non-directional implantation of impurities in a gate spacerTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jul 26, 2022·1 cites·20 claims
- 0582US2024379364A1Semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 0681US11574846B2Gate formation of semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Feb 7, 2023·1 cites·20 claims
- 0780US2025366054A1Profiles of gate structures in semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0879US2025366127A1Semiconductor Structure With Modified Spacer And Method For Forming The SameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 0978US12444608B2Structure having gate spacers with projecting portions extending into a gate dielectricTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Oct 14, 2025·0 cites·20 claims
- 1078US11031470B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2020·Granted Jun 8, 2021·1 cites·20 claims
- 1177US10535737B2Semiconductor device and manufacturing method thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2017·Granted Jan 14, 2020·2 cites·20 claims
- 1273US12198988B2Gate formation of semiconductor devicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2023·Granted Jan 14, 2025·0 cites·20 claims
- 1373US2024313090A1Multi-gate device fabrication and structures thereofTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1471US2025203940A1Profiles Of Gate Structures In Semiconductor DevicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1567US2023187535A1Semiconductor structure with modified spacer and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Application pending·0 cites
- 1664US2025149388A1Gate Formation Of Semiconductor DevicesTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2025·Application pending·0 cites
- 1761US2025385098A1Semiconductor device with metal gate structure and method of forming sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1859US2025374604A1Semiconductor device structure with nanostructure and method for forming the sameTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2024·Application pending·0 cites
- 1956US12477772B2Method for forming multi-gate semiconductor structureTAIWAN SEMICONDUCTOR MFG CO LTD·Filed 2022·Granted Nov 18, 2025·0 cites·20 claims
- 2047US2024126600A1Service process invoking method and related apparatusHUAWEI TECH CO LTD·Filed 2023·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →