Inventor · disambiguated record
Kwang Soo Seol
Also filed as: SEOL KWANG S · SEOL KWANG-SOO
82 granted patents·28 pending applications·572 citations·filing 2002–2023
99Inventor score
Top patents by PatentIndex Score
110 records- 0198US7662732B2Method of preparing patterned carbon nanotube array and patterned carbon nanotube array prepared therebySAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Feb 16, 2010·80 cites·14 claims
- 0297US9536970B2Three-dimensional semiconductor memory devices and methods of fabricating the sameSEOL KWANG SOO·Filed 2011·Granted Jan 3, 2017·43 cites·12 claims
- 0396US9099347B2Three-dimensional semiconductor memory devices and method of fabricating the sameYUN JANG-GN·Filed 2012·Granted Aug 4, 2015·16 cites·15 claims
- 0495US8741761B2Methods of manufacturing three-dimensional semiconductor devicesLEE JAEGOO·Filed 2011·Granted Jun 3, 2014·28 cites·18 claims
- 0594US9111617B2Three-dimensional semiconductor memory deviceSHIM SUNIL·Filed 2012·Granted Aug 18, 2015·20 cites·8 claims
- 0694US8581321B2Nonvolatile memory device and method of forming the sameSON BYOUNGKEUN·Filed 2011·Granted Nov 12, 2013·20 cites·13 claims
- 0793US9553101B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Jan 24, 2017·19 cites·21 claims
- 0892US10903327B2Three-dimensional semiconductor memory devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Jan 26, 2021·2 cites·19 claims
- 0992US9257572B2Vertical type memory deviceSEOL KWANG-SOO·Filed 2013·Granted Feb 9, 2016·10 cites·20 claims
- 1092US9129861B2Memory deviceSEOL KWANG SOO·Filed 2014·Granted Sep 8, 2015·12 cites·6 claims
- 1191US8530959B2Three-dimensional semiconductor memory deviceCHANG SUNG-IL·Filed 2011·Granted Sep 10, 2013·11 cites·10 claims
- 1291US7482619B2Charge trap memory device comprising composite of nanoparticles and method of fabricating the charge trap memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Jan 27, 2009·20 cites·25 claims
- 1390US9171729B2Methods of manufacturing vertical semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Oct 27, 2015·8 cites·13 claims
- 1490US8697524B2Methods of manufacturing vertical semiconductor devicesYOU BYUNG-KWAN·Filed 2011·Granted Apr 15, 2014·16 cites·20 claims
- 1590US8587052B2Semiconductor devices and methods of fabricating the sameYUN JANG-GN·Filed 2012·Granted Nov 19, 2013·13 cites·14 claims
- 1689US9356044B2Vertical type memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted May 31, 2016·5 cites·20 claims
- 1789US9269721B2Memory deviceSEOL KWANG SOO·Filed 2015·Granted Feb 23, 2016·5 cites·14 claims
- 1889US8796091B2Three-dimensional semiconductor memory devicesSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Aug 5, 2014·9 cites·7 claims
- 1988US9183893B2Semiconductor memory deviceKANAMORI KOHJI·Filed 2013·Granted Nov 10, 2015·11 cites·20 claims
- 2088US8335109B2Nonvolatile memory device and method for operating the sameSEOL KWANG-SOO·Filed 2009·Granted Dec 18, 2012·18 cites·20 claims
- 2187US9768266B2Three-dimensional semiconductor memory devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Sep 19, 2017·3 cites·15 claims
- 2287US7998804B2Nonvolatile memory device including nano dot and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Aug 16, 2011·9 cites·9 claims
- 2385US8754466B2Three-dimensional semiconductor memory devicesYUN JANGGN·Filed 2012·Granted Jun 17, 2014·13 cites·20 claims
- 2484US11888042B2Three-dimensional semiconductor memory devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Jan 30, 2024·0 cites·19 claims
- 2584US8625357B2Local self-boosting method of flash memory device and program method using the sameCHO BYUNGKYU·Filed 2010·Granted Jan 7, 2014·11 cites·14 claims
- 2683US9564499B2Three-dimensional semiconductor memory devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Feb 7, 2017·3 cites·20 claims
- 2783US9478560B2Memory deviceSEOL KWANG SOO·Filed 2015·Granted Oct 25, 2016·3 cites·9 claims
- 2883US9466613B2Vertical type memory deviceSEOL KWANG-SOO·Filed 2016·Granted Oct 11, 2016·3 cites·10 claims
- 2983US8053302B2Non-volatile memory device and method of manufacturing sameSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Nov 8, 2011·9 cites·14 claims
- 3082US8000150B2Method of programming memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Aug 16, 2011·13 cites·19 claims
- 3182US7609929B2Surface emitting device and method for fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Oct 27, 2009·11 cites·26 claims
- 3282US2023044895A1Three-dimensional semiconductor memory devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2022·Application pending·0 cites
- 3381US9786675B2Non-volatile memory devices including charge storage layersSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Oct 10, 2017·4 cites·19 claims
- 3481US9741735B2Vertical memory devices having charge storage layers with thinned portionsSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Aug 22, 2017·4 cites·18 claims
- 3581US8247788B2Nonvolatile memory deviceSEOL KWANG-SOO·Filed 2010·Granted Aug 21, 2012·5 cites·20 claims
- 3679US7929351B2Method for reducing lateral movement of charges and memory device thereofSAMSUNG ELECTRONICS CO LTD·Filed 2009·Granted Apr 19, 2011·10 cites·20 claims
- 3778US12029040B2Semiconductor device, systems and methods of manufactureSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Jul 2, 2024·0 cites·21 claims
- 3878US9287167B2Vertical type memory deviceSEOL KWANG SOO·Filed 2014·Granted Mar 15, 2016·5 cites·20 claims
- 3978US9219168B2Non-volatile memory device and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Dec 22, 2015·3 cites·13 claims
- 4078US9093479B2Method of forming nonvolatile memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2013·Granted Jul 28, 2015·4 cites·9 claims
- 4178US8295097B2Channel precharge and program methods of a nonvolatile memory deviceCHO BYUNGKYU·Filed 2010·Granted Oct 23, 2012·7 cites·20 claims
- 4276US11588032B2Three-dimensional semiconductor memory devices and methods of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Feb 21, 2023·0 cites·20 claims
- 4376US9831265B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Nov 28, 2017·3 cites·20 claims
- 4476US8062978B2Crystalline aluminum oxide layers having increased energy band gap, charge trap layer devices including crystalline aluminum oxide layers, and methods of manufacturing the sameCHOI SANG-MOO·Filed 2008·Granted Nov 22, 2011·6 cites·27 claims
- 4576US7929349B2Method of operating nonvolatile memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Apr 19, 2011·8 cites·15 claims
- 4674US9401209B2Three-dimensional semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Jul 26, 2016·2 cites·12 claims
- 4774US7751254B2Method of programming non-volatile memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Jul 6, 2010·8 cites·14 claims
- 4873US7907452B2Non-volatile memory cell programming methodSAMSUNG ELECTRONICS CO LTD·Filed 2008·Granted Mar 15, 2011·8 cites·21 claims
- 4973US7888857B2Light emitting device with three-dimensional structure and fabrication method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2006·Granted Feb 15, 2011·5 cites·13 claims
- 5071US8907398B2Gate structure in non-volatile memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted Dec 9, 2014·2 cites·15 claims
Showing the top 50 of 110 patent records by PatentIndex Score.
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