Inventor · disambiguated record
James R. Pfiester
Also filed as: PFIESTER JAMES · PFIESTER JAMES R · PFIESTER JAMES RUHL
69 granted patents·3,638 citations·filing 1979–2009
99Inventor score
Files withMOTOROLA INC67AVAGO TECHNOLOGIES ENTPR IP SINGAPORE PTE LTD1AVAGO TECHNOLOGIES GENERAL IP1
Top patents by PatentIndex Score
69 records- 0197US5182619ASemiconductor device having an MOS transistor with overlapped and elevated source and drainMOTOROLA INC·Filed 1991·Granted Jan 26, 1993·170 cites·13 claims
- 0295US5241193ASemiconductor device having a thin-film transistor and processMOTOROLA INC·Filed 1992·Granted Aug 31, 1993·132 cites·17 claims
- 0394US4745079AMethod for fabricating MOS transistors having gates with different work functionsMOTOROLA INC·Filed 1987·Granted May 17, 1988·141 cites·21 claims
- 0493US5352631AMethod for forming a transistor having silicided regionsMOTOROLA INC·Filed 1992·Granted Oct 4, 1994·172 cites·20 claims
- 0593US4948745AProcess for elevated source/drain field effect structureMOTOROLA INC·Filed 1989·Granted Aug 14, 1990·80 cites·9 claims
- 0693US4852062AEPROM device using asymmetrical transistor characteristicsMOTOROLA INC·Filed 1987·Granted Jul 25, 1989·98 cites·14 claims
- 0792US4978626ALDD transistor process having doping sensitive endpoint etchingMOTOROLA INC·Filed 1988·Granted Dec 18, 1990·83 cites·12 claims
- 0892US4876213ASalicided source/drain structureMOTOROLA INC·Filed 1988·Granted Oct 24, 1989·103 cites·5 claims
- 0992US4835112ACMOS salicide process using germanium implantationMOTOROLA INC·Filed 1988·Granted May 30, 1989·132 cites·14 claims
- 1092US4714519AMethod for fabricating MOS transistors having gates with different work functionsMOTOROLA INC·Filed 1987·Granted Dec 22, 1987·113 cites·11 claims
- 1191US5334861ASemiconductor memory cellMOTOROLA INC·Filed 1992·Granted Aug 2, 1994·74 cites·17 claims
- 1291US5166084AProcess for fabricating a silicon on insulator field effect transistorMOTOROLA INC·Filed 1991·Granted Nov 24, 1992·140 cites·10 claims
- 1390US5371026AMethod for fabricating paired MOS transistors having a current-gain differentialMOTOROLA INC·Filed 1992·Granted Dec 6, 1994·85 cites·9 claims
- 1490US5212110AMethod for forming isolation regions in a semiconductor deviceMOTOROLA INC·Filed 1992·Granted May 18, 1993·123 cites·10 claims
- 1590US5083190AShared gate CMOS transistorMOTOROLA INC·Filed 1990·Granted Jan 21, 1992·81 cites·7 claims
- 1690US5024959ACMOS process using doped glass layerMOTOROLA INC·Filed 1989·Granted Jun 18, 1991·61 cites·8 claims
- 1789US4728619AField implant process for CMOS using germaniumMOTOROLA INC·Filed 1987·Granted Mar 1, 1988·88 cites·22 claims
- 1888US4318014ASelective precharge circuit for read-only-memoryMOTOROLA INC·Filed 1979·Granted Mar 2, 1982·34 cites·7 claims
- 1987US5426315AThin-film transistor having an inlaid thin-film channel regionMOTOROLA INC·Filed 1993·Granted Jun 20, 1995·64 cites·17 claims
- 2087US5268590ACMOS device and processMOTOROLA INC·Filed 1992·Granted Dec 7, 1993·70 cites·13 claims
- 2187US5200352ATransistor having a lightly doped region and method of formationMOTOROLA INC·Filed 1991·Granted Apr 6, 1993·93 cites·20 claims
- 2286US4761385AForming a trench capacitorMOTOROLA INC·Filed 1987·Granted Aug 2, 1988·50 cites·4 claims
- 2385US5348903AProcess for fabricating a semiconductor memory cell having thin-film driver transistors overlapping dual wordlinesMOTOROLA INC·Filed 1992·Granted Sep 20, 1994·70 cites·12 claims
- 2485US5021354AProcess for manufacturing a semiconductor deviceMOTOROLA INC·Filed 1989·Granted Jun 4, 1991·71 cites·14 claims
- 2582US5373170ASemiconductor memory device having a compact symmetrical layoutMOTOROLA INC·Filed 1993·Granted Dec 13, 1994·52 cites·10 claims
- 2682US4786611AAdjusting threshold voltages by diffusion through refractory metal silicidesMOTOROLA INC·Filed 1987·Granted Nov 22, 1988·60 cites·19 claims
- 2781US4997785AShared gate CMOS transistorMOTOROLA INC·Filed 1989·Granted Mar 5, 1991·38 cites·11 claims
- 2881US4918510ACompact CMOS device structureMOTOROLA INC·Filed 1988·Granted Apr 17, 1990·37 cites·11 claims
- 2981US4743563AProcess of controlling surface dopingMOTOROLA INC·Filed 1987·Granted May 10, 1988·45 cites·10 claims
- 3080US5082794AMethod of fabricating mos transistors using selective polysilicon depositionMOTOROLA INC·Filed 1990·Granted Jan 21, 1992·48 cites·20 claims
- 3180US4948747AMethod of making an integrated circuit resistorMOTOROLA INC·Filed 1989·Granted Aug 14, 1990·36 cites·10 claims
- 3280US4928156AN-channel MOS transistors having source/drain regions with germaniumMOTOROLA INC·Filed 1989·Granted May 22, 1990·54 cites·5 claims
- 3379US5324960ADual-transistor structure and method of formationMOTOROLA INC·Filed 1993·Granted Jun 28, 1994·37 cites·24 claims
- 3477US5405806AMethod for forming a metal silicide interconnect in an integrated circuitMOTOROLA INC·Filed 1994·Granted Apr 11, 1995·58 cites·19 claims
- 3577US5330929AMethod of making a six transistor static random access memory cellMOTOROLA INC·Filed 1992·Granted Jul 19, 1994·45 cites·7 claims
- 3676US5407847AMethod for fabricating a semiconductor device having a shallow doped regionMOTOROLA INC·Filed 1993·Granted Apr 18, 1995·53 cites·8 claims
- 3776US4966864AContact structure and methodMOTOROLA INC·Filed 1989·Granted Oct 30, 1990·45 cites·13 claims
- 3875US5264380AMethod of making an MOS transistor having improved transconductance and short channel characteristicsMOTOROLA INC·Filed 1989·Granted Nov 23, 1993·42 cites·8 claims
- 3973US5047812AInsulated gate field effect deviceMOTOROLA INC·Filed 1989·Granted Sep 10, 1991·28 cites·7 claims
- 4072US8358548B2Methods for efficiently repairing embedded dynamic random-access memory having marginally failing cellsAVAGO TECHNOLOGIES ENTPR IP SINGAPORE PTE LTD·Filed 2009·Granted Jan 22, 2013·8 cites·8 claims
- 4172US5319232ATransistor having a lightly doped regionMOTOROLA INC·Filed 1993·Granted Jun 7, 1994·45 cites·14 claims
- 4272US4992388AShort channel IGFET processMOTOROLA INC·Filed 1989·Granted Feb 12, 1991·27 cites·15 claims
- 4372US4942137ASelf-aligned trench with selective trench fillMOTOROLA INC·Filed 1989·Granted Jul 17, 1990·42 cites·19 claims
- 4469US5279976AMethod for fabricating a semiconductor device having a shallow doped regionMOTOROLA INC·Filed 1991·Granted Jan 18, 1994·41 cites·19 claims
- 4569US4837173AN-channel MOS transistors having source/drain regions with germaniumMOTOROLA INC·Filed 1987·Granted Jun 6, 1989·34 cites·9 claims
- 4667US5371035AMethod for forming electrical isolation in an integrated circuit deviceMOTOROLA INC·Filed 1993·Granted Dec 6, 1994·39 cites·8 claims
- 4766US5536962ASemiconductor device having a buried channel transistorMOTOROLA INC·Filed 1995·Granted Jul 16, 1996·32 cites·8 claims
- 4866US4984042AMOS transistors using selective polysilicon depositionMOTOROLA INC·Filed 1989·Granted Jan 8, 1991·22 cites·4 claims
- 4963US5413948AMethod for forming a dual transistor structureMOTOROLA INC·Filed 1994·Granted May 9, 1995·18 cites·20 claims
- 5063US4847213AProcess for providing isolation between CMOS devicesMOTOROLA INC·Filed 1988·Granted Jul 11, 1989·27 cites·10 claims
Showing the top 50 of 69 patent records by PatentIndex Score.
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