Inventor · disambiguated record
Joachim Weyers
Also filed as: WEYERS JOACHIM
47 granted patents·7 pending applications·90 citations·filing 2008–2024
97Inventor score
Files withINFINEON TECHNOLOGIES AUSTRIA AG15INFINEON TECHNOLOGIES AG11INFINEON TECH DRESDEN GMBH & CO KG7INFINEON TECHNOLOGIES AUSTRIA6INFINEON TECHNOLOGIES DRESDEN GMBH6
Top patents by PatentIndex Score
54 records- 0189US9281392B2Charge compensation structure and manufacturing thereforINFINEON TECHNOLOGIES AUSTRIA·Filed 2014·Granted Mar 8, 2016·11 cites·20 claims
- 0289US8742539B2Semiconductor component and method for producing a semiconductor componentWEYERS JOACHIM·Filed 2012·Granted Jun 3, 2014·14 cites·27 claims
- 0388US9947741B2Field-effect semiconductor device having pillar regions of different conductivity type arranged in an active areaINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2017·Granted Apr 17, 2018·4 cites·19 claims
- 0486US8958189B1High-voltage semiconductor switch and method for switching high voltagesINFINEON TECHNOLOGIES AUSTRIA·Filed 2013·Granted Feb 17, 2015·8 cites·20 claims
- 0584US9209292B2Charge compensation semiconductor devicesINFINEON TECHNOLOGIES AUSTRIA·Filed 2013·Granted Dec 8, 2015·5 cites·20 claims
- 0684US8247874B2Depletion MOS transistor and charging arrangementHIRLER FRANZ·Filed 2010·Granted Aug 21, 2012·7 cites·24 claims
- 0783US9401355B2Semiconductor device including a diode arranged in a trenchWEYERS JOACHIM·Filed 2011·Granted Jul 26, 2016·6 cites·29 claims
- 0880US10418358B2Semiconductor device having an electrostatic discharge protection structureINFINEON TECHNOLOGIES DRESDEN GMBH·Filed 2017·Granted Sep 17, 2019·3 cites·16 claims
- 0979US9570607B2Field-effect semiconductor device having alternating n-type and p-type pillar regions arranged in an active areaINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2015·Granted Feb 14, 2017·2 cites·5 claims
- 1079US8901661B2Semiconductor device with first and second field-effect structures and an integrated circuit including the semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA·Filed 2013·Granted Dec 2, 2014·4 cites·4 claims
- 1179US2024413198A1Semiconductor Device with Compensation StructureINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2024·Application pending·0 cites
- 1277US10541327B2Semiconductor device comprising a trench structureINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2018·Granted Jan 21, 2020·2 cites·22 claims
- 1377US7808067B2Semiconductor device and temperature sensor structure for a semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2008·Granted Oct 5, 2010·7 cites·26 claims
- 1476US10483383B2Semiconductor device including a gate contact structureINFINEON TECH DRESDEN GMBH & CO KG·Filed 2018·Granted Nov 19, 2019·2 cites·20 claims
- 1575US9087707B2Semiconductor arrangement with a power transistor and a high voltage device integrated in a common semiconductor bodyMAUDER ANTON·Filed 2012·Granted Jul 21, 2015·3 cites·19 claims
- 1671US10468479B2VDMOS having a drift zone with a compensation structureINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2014·Granted Nov 5, 2019·2 cites·5 claims
- 1770US9293528B2Field-effect semiconductor device and manufacturing thereforINFINEON TECHNOLOGIES AUSTRIA·Filed 2013·Granted Mar 22, 2016·2 cites·18 claims
- 1868US9773863B2VDMOS having a non-depletable extension zone formed between an active area and side surface of semiconductor bodyINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2014·Granted Sep 26, 2017·2 cites·18 claims
- 1968US9184255B2Diode with controllable breakdown voltageHIRLER FRANZ·Filed 2011·Granted Nov 10, 2015·2 cites·18 claims
- 2066US9418851B2Method for manufacturing a semiconductor deviceINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2016·Granted Aug 16, 2016·1 cites·10 claims
- 2165US9490250B2Half-bridge circuit with a low-side transistor and a level shifter transistor integrated in a common semiconductor bodyINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2015·Granted Nov 8, 2016·1 cites·8 claims
- 2263US12119376B2Power semiconductor device having vertically parallel p-n layers formed in an active region under transistor cells and under a non-depletable extension zone formed in the edge regionINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2019·Granted Oct 15, 2024·0 cites·14 claims
- 2363US9728529B2Semiconductor device with electrostatic discharge protection structureINFINEON TECHNOLOGIES DRESDEN GMBH·Filed 2014·Granted Aug 8, 2017·1 cites·20 claims
- 2461US12510420B2Semiconductor device with sense elementINFINEON TECHNOLOGIES AG·Filed 2022·Granted Dec 30, 2025·0 cites·21 claims
- 2561US9640602B2Semiconductor device including magnetically coupled monolithic integrated coilsINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2012·Granted May 2, 2017·1 cites·27 claims
- 2659US2025172438A1Semiconductor die and corresponding methodINFINEON TECHNOLOGIES AG·Filed 2024·Application pending·0 cites
- 2758US12477800B2Semiconductor diode and manufacturing methodINFINEON TECHNOLOGIES AG·Filed 2023·Granted Nov 18, 2025·0 cites·19 claims
- 2858US12426350B2Semiconductor device with diode chain connected to gate metallizationINFINEON TECHNOLOGIES AG·Filed 2022·Granted Sep 23, 2025·0 cites·19 claims
- 2956US11876133B2Silicon carbide device with transistor cell and clamp regionINFINEON TECHNOLOGIES AG·Filed 2021·Granted Jan 16, 2024·0 cites·14 claims
- 3056US2024387721A1Silicon carbide device with transistor cell and clamp regionINFINEON TECHNOLOGIES AG·Filed 2024·Application pending·0 cites
- 3154US12057473B2Silicon carbide device with transistor cell and clamp regions in a well regionINFINEON TECHNOLOGIES AG·Filed 2021·Granted Aug 6, 2024·0 cites·14 claims
- 3254US9947648B2Semiconductor device including a diode at least partly arranged in a trenchINFINEON TECHNOLOGIES AG·Filed 2016·Granted Apr 17, 2018·0 cites·30 claims
- 3353US2020044064A1Gate Contact Structure for a Semiconductor DeviceINFINEON TECH DRESDEN GMBH & CO KG·Filed 2019·Application pending·0 cites
- 3452US11430781B2Semiconductor dieINFINEON TECH DRESDEN GMBH & CO KG·Filed 2020·Granted Aug 30, 2022·0 cites·13 claims
- 3552US11424358B2Semiconductor device with sensor for crack detectionINFINEON TECH DRESDEN GMBH & CO KG·Filed 2020·Granted Aug 23, 2022·0 cites·15 claims
- 3651US10971620B2Method for producing a semiconductor arrangementINFINEON TECH DRESDEN GMBH & CO KG·Filed 2019·Granted Apr 6, 2021·0 cites·38 claims
- 3750US11688732B2Short circuit protection structure in MOS-gated power devicesINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2020·Granted Jun 27, 2023·0 cites·27 claims
- 3849US9768160B2Semiconductor device, electronic circuit and method for switching high voltagesINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2014·Granted Sep 19, 2017·0 cites·11 claims
- 3949US9548400B2Method of controlling breakdown voltage of a diode having a semiconductor bodyINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2015·Granted Jan 17, 2017·0 cites·20 claims
- 4048US11302781B2Semiconductor device having an electrostatic discharge protection structureINFINEON TECHNOLOGIES AG·Filed 2018·Granted Apr 12, 2022·0 cites·20 claims
- 4148US8482029B2Semiconductor device and integrated circuit including the semiconductor deviceMAUDER ANTON·Filed 2011·Granted Jul 9, 2013·0 cites·16 claims
- 4248US8097880B2Semiconductor component including a lateral transistor componentWEYERS JOACHIM·Filed 2009·Granted Jan 17, 2012·0 cites·13 claims
- 4347US2017373140A1Semiconductor Device with Field Dielectric in an Edge AreaINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2017·Application pending·0 cites
- 4446US8487307B2Semiconductor component including a lateral transistor componentWEYERS JOACHIM·Filed 2011·Granted Jul 16, 2013·0 cites·6 claims
- 4545US7943960B2Integrated circuit arrangement including a protective structureINFINEON TECHNOLOGIES AG·Filed 2008·Granted May 17, 2011·0 cites·16 claims
- 4644US10504891B2Semiconductor device and a manufacturing method thereforINFINEON TECHNOLOGIES AUSTRIA AG·Filed 2018·Granted Dec 10, 2019·0 cites·20 claims
- 4743US10741541B2Method of manufacturing a semiconductor deviceINFINEON TECH DRESDEN GMBH & CO KG·Filed 2016·Granted Aug 11, 2020·0 cites·22 claims
- 4843US10199367B2Semiconductor deviceINFINEON TECHNOLOGIES DRESDEN GMBH·Filed 2017·Granted Feb 5, 2019·0 cites·20 claims
- 4940US10354992B2Semiconductor devices and methods for forming a semiconductor deviceINFINEON TECH DRESDEN GMBH & CO KG·Filed 2017·Granted Jul 16, 2019·0 cites·20 claims
- 5040US9991252B2Semiconductor device comprising electrostatic discharge protection structureINFINEON TECHNOLOGIES DRESDEN GMBH·Filed 2016·Granted Jun 5, 2018·0 cites·20 claims
Showing the top 50 of 54 patent records by PatentIndex Score.
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