Inventor · disambiguated record
Manuj Rathor
Also filed as: RATHOR MANUJ
22 granted patents·1 pending application·289 citations·filing 1999–2020
94Inventor score
Files withCYPRESS SEMICONDUCTOR CORP5ADVANCED RISC MACH LTD4RATHOR MANUJ4PANGRLE SUZETTE K3SPANSION LLC3
Top patents by PatentIndex Score
23 records- 0197US6818558B1Method of manufacturing a dielectric layer for a silicon-oxide-nitride-oxide-silicon (SONOS) type devicesCYPRESS SEMICONDUCTOR CORP·Filed 2002·Granted Nov 16, 2004·190 cites·20 claims
- 0289US10672982B1Fabrication of correlated electron material (CEM) devicesADVANCED RISC MACH LTD·Filed 2018·Granted Jun 2, 2020·5 cites·22 claims
- 0388US10141504B2Methods and processes for forming devices from correlated electron material (CEM)ADVANCED RISC MACH LTD·Filed 2017·Granted Nov 27, 2018·5 cites·9 claims
- 0484US6436799B1Process for annealing semiconductors and/or integrated circuitsCYPRESS SEMICONDUCTOR CORP·Filed 2000·Granted Aug 20, 2002·27 cites·13 claims
- 0581US7323377B1Increasing self-aligned contact areas in integrated circuits using a disposable spacerCYPRESS SEMICONDUCTOR CORP·Filed 2005·Granted Jan 29, 2008·13 cites·18 claims
- 0676US7468525B2Test structures for development of metal-insulator-metal (MIM) devicesSPANSION LLC·Filed 2006·Granted Dec 23, 2008·4 cites·8 claims
- 0773US8093698B2Gettering/stop layer for prevention of reduction of insulating oxide in metal-insulator-metal deviceRATHOR MANUJ·Filed 2006·Granted Jan 10, 2012·6 cites·15 claims
- 0866US7772077B2Method of forming a semiconductor structure comprising a field effect transistor having a stressed channel regionADVANCED MICRO DEVICES INC·Filed 2007·Granted Aug 10, 2010·2 cites·9 claims
- 0961US6372634B1Plasma etch chemistry and method of improving etch controlCYPRESS SEMICONDUCTOR CORP·Filed 1999·Granted Apr 16, 2002·26 cites·29 claims
- 1060US8803120B2Diode and resistive memory device structuresRATHOR MANUJ·Filed 2011·Granted Aug 12, 2014·1 cites·4 claims
- 1157US8089113B2Damascene metal-insulator-metal (MIM) devicePANGRLE SUZETTE K·Filed 2006·Granted Jan 3, 2012·1 cites·20 claims
- 1257US6624052B2Process for annealing semiconductors and/or integrated circuitsCYPRESS SEMICONDUCTOR CORP·Filed 2002·Granted Sep 23, 2003·4 cites·16 claims
- 1355US10707415B2Methods and processes for forming devices from correlated electron material (CEM)ADVANCED RISC MACH LTD·Filed 2018·Granted Jul 7, 2020·0 cites·17 claims
- 1454US8717803B2Metal-insulator-metal-insulator-metal (MIMIM) memory deviceRATHOR MANUJ·Filed 2011·Granted May 6, 2014·1 cites·5 claims
- 1554US2020295259A1Fabrication of correlated electron material (cem) devicesADVANCED RISC MACH LTD·Filed 2020·Application pending·0 cites
- 1653US8035099B2Diode and resistive memory device structuresSPANSION LLC·Filed 2008·Granted Oct 11, 2011·0 cites·18 claims
- 1752US8093680B1Metal-insulator-metal-insulator-metal (MIMIM) memory deviceRATHOR MANUJ·Filed 2006·Granted Jan 10, 2012·2 cites·15 claims
- 1851US8084770B2Test structures for development of metal-insulator-metal (MIM) devicesAVANZINO STEVEN·Filed 2008·Granted Dec 27, 2011·0 cites·7 claims
- 1950US8373148B2Memory device with improved performanceSPANSION LLC·Filed 2007·Granted Feb 12, 2013·0 cites·8 claims
- 2049US11075339B2Correlated electron material (CEM) devices with contact region sidewall insulationCERFE LABS INC·Filed 2018·Granted Jul 27, 2021·0 cites·14 claims
- 2148US8232175B2Damascene metal-insulator-metal (MIM) device with improved scaleabilityPANGRLE SUZETTE K·Filed 2006·Granted Jul 31, 2012·0 cites·11 claims
- 2248US6969689B1Method of manufacturing an oxide-nitride-oxide (ONO) dielectric for SONOS-type devicesRAMKUMAR KRISHNASWAMY·Filed 2002·Granted Nov 29, 2005·2 cites·18 claims
- 2345US9343666B2Damascene metal-insulator-metal (MIM) device with improved scaleabilityPANGRLE SUZETTE K·Filed 2012·Granted May 17, 2016·0 cites·14 claims
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