Inventor · disambiguated record
Toshio Nakanishi
Also filed as: NAKANISHI TOSHIO
52 granted patents·27 pending applications·566 citations·filing 1981–2025
98Inventor score
Top patents by PatentIndex Score
79 records- 0196US8366953B2Plasma cleaning method and plasma CVD methodTOKYO ELECTRON LTD·Filed 2007·Granted Feb 5, 2013·88 cites·14 claims
- 0296USD406613SElectronic game housingHOUYU CO LTD·Filed 1997·Granted Mar 9, 1999·113 cites·1 claims
- 0393US10755922B2Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted depositionASM IP HOLDING BV·Filed 2019·Granted Aug 25, 2020·8 cites·19 claims
- 0492US10318441B2Modular measurement apparatusNGK SPARK PLUG CO·Filed 2015·Granted Jun 11, 2019·8 cites·11 claims
- 0590US4388133AMethod of manufacturing artificial wood veneerMATSUSHITA ELECTRIC WORKS LTD·Filed 1981·Granted Jun 14, 1983·57 cites·35 claims
- 0686US7674722B2Method of forming gate insulating film, semiconductor device and computer recording mediumTOKYO ELECTRON LTD·Filed 2005·Granted Mar 9, 2010·11 cites·7 claims
- 0786US6897149B2Method of producing electronic device materialTOKYO ELECTRON LTD·Filed 2002·Granted May 24, 2005·24 cites·34 claims
- 0885US7429539B2Nitriding method of gate oxide filmTOKYO ELECTRON LTD·Filed 2006·Granted Sep 30, 2008·7 cites·31 claims
- 0985US7217659B2Process for producing materials for electronic deviceTOKYO ELECTRON LTD·Filed 2005·Granted May 15, 2007·5 cites·44 claims
- 1084US7723241B2Plasma processing method and computer storage mediumTOKYO ELECTRON LTD·Filed 2006·Granted May 25, 2010·8 cites·8 claims
- 1183US11646197B2Method for depositing silicon-free carbon-containing film as gap-fill layer by pulse plasma-assisted depositionASM IP HOLDING BV·Filed 2020·Granted May 9, 2023·1 cites·16 claims
- 1283US8258571B2MOS semiconductor memory device having charge storage region formed from stack of insulating filmsENDOH TETSUO·Filed 2008·Granted Sep 4, 2012·11 cites·19 claims
- 1382US10094757B2Particulate measurement apparatus and particulate measurement systemNGK SPARK PLUG CO·Filed 2016·Granted Oct 9, 2018·2 cites·7 claims
- 1482US7960293B2Method for forming insulating film and method for manufacturing semiconductor deviceTOKYO ELECTRON LTD·Filed 2007·Granted Jun 14, 2011·7 cites·20 claims
- 1581US7897518B2Plasma processing method and computer storage mediumTOKYO ELECTRON LTD·Filed 2010·Granted Mar 1, 2011·4 cites·7 claims
- 1681US7226874B2Substrate processing methodTOKYO ELECTRON LTD·Filed 2004·Granted Jun 5, 2007·24 cites·17 claims
- 1779US5815366AElectrostatic chuck and the method of operating the sameSUMITOMO METAL IND·Filed 1995·Granted Sep 29, 1998·57 cites·9 claims
- 1877US10017853B2Processing method of silicon nitride film and forming method of silicon nitride filmTOKYO ELECTRON LTD·Filed 2017·Granted Jul 10, 2018·2 cites·11 claims
- 1976US7763551B2RLSA CVD deposition control using halogen gas for hydrogen scavengingTOKYO ELECTRON LTD·Filed 2008·Granted Jul 27, 2010·2 cites·14 claims
- 2075US7820557B2Method for nitriding substrate and method for forming insulating filmTOKYO ELECTRON LTD·Filed 2006·Granted Oct 26, 2010·4 cites·22 claims
- 2175US7053515B2Rotor for dynamo-electric machineMITSUBISHI ELECTRIC CORP·Filed 2002·Granted May 30, 2006·15 cites·16 claims
- 2275US2024150894A1Exhaust component cleaning method and substrate processing apparatus including exhaust componentASM IP HOLDING BV·Filed 2024·Application pending·0 cites
- 2375US2025207249A1Exhaust component cleaning method and substrate processing apparatus including exhaust componentASM IP HOLDING BV·Filed 2025·Application pending·0 cites
- 2474US8021987B2Method of modifying insulating filmTOKYO ELECTRON LTD·Filed 2009·Granted Sep 20, 2011·3 cites·24 claims
- 2574US7662236B2Method for forming insulation filmTOKYO ELECTRON LTD·Filed 2008·Granted Feb 16, 2010·3 cites·8 claims
- 2673US8158535B2Method for forming insulating film and method for manufacturing semiconductor deviceHONDA MINORU·Filed 2007·Granted Apr 17, 2012·4 cites·14 claims
- 2773US7374635B2Forming method and forming system for insulation filmTOKYO ELECTRON LTD·Filed 2006·Granted May 20, 2008·3 cites·9 claims
- 2872US7655574B2Method of modifying insulating filmTOKYO ELECTRON LTD·Filed 2005·Granted Feb 2, 2010·3 cites·14 claims
- 2971US8247331B2Method for forming insulating film and method for manufacturing semiconductor deviceHONDA MINORU·Filed 2007·Granted Aug 21, 2012·3 cites·16 claims
- 3068US7446052B2Method for forming insulation filmTOKYO ELECTRON LTD·Filed 2003·Granted Nov 4, 2008·10 cites·18 claims
- 3167US9670883B2EngineKUBOTA KK·Filed 2014·Granted Jun 6, 2017·2 cites·21 claims
- 3267US7250375B2Substrate processing method and material for electronic deviceTOKYO ELECTRON LTD·Filed 2002·Granted Jul 31, 2007·9 cites·51 claims
- 3366US7232772B2Substrate processing methodTOKYO ELECTRON LTD·Filed 2004·Granted Jun 19, 2007·7 cites·11 claims
- 3466US6290807B1Apparatus and method for microwave plasma processTOKYO ELECTRON LTD·Filed 1999·Granted Sep 18, 2001·17 cites·25 claims
- 3564US6076484AApparatus and method for microwave plasma processSUMITOMO METAL IND·Filed 1998·Granted Jun 20, 2000·16 cites·27 claims
- 3663US8119545B2Forming a silicon nitride film by plasma CVDHONDA MINORU·Filed 2009·Granted Feb 21, 2012·2 cites·7 claims
- 3763US7968470B2Plasma nitriding method, method for manufacturing semiconductor device and plasma processing apparatusUNIV TOHOKU·Filed 2006·Granted Jun 28, 2011·1 cites·11 claims
- 3863US7915177B2Method of forming gate insulation film, semiconductor device, and computer recording mediumTOYKO ELECTRON LTD·Filed 2010·Granted Mar 29, 2011·1 cites·8 claims
- 3963US2007218687A1Process for producing materials for electronic deviceTOKYO ELECTRON LTD·Filed 2007·Application pending·0 cites
- 4062US2021071296A1Exhaust component cleaning method and substrate processing apparatus including exhaust componentASM IP HOLDING BV·Filed 2020·Application pending·0 cites
- 4161US8138103B2Plasma CVD method, method for forming silicon nitride film and method for manufacturing semiconductor deviceKOHNO MASAYUKI·Filed 2007·Granted Mar 20, 2012·1 cites·14 claims
- 4259US5148997ASlag crushing deviceDAIKI ALUMINIUM IND·Filed 1991·Granted Sep 22, 1992·13 cites·14 claims
- 4358US2010096707A1Method for Forming Insulation FilmTOKYO ELECTRON LTD·Filed 2009·Application pending·0 cites
- 4456US2009035950A1Nitriding method of gate oxide filmTOKYO ELECTRON LTD·Filed 2008·Application pending·0 cites
- 4555US8569186B2Plasma CVD method, method for forming silicon nitride film and method for manufacturing semiconductor deviceTOKYO ELECTRON LTD·Filed 2012·Granted Oct 29, 2013·0 cites·4 claims
- 4654US2008214017A1Forming Method and Forming System for Insulation FilmTOKYO ELECTRON LTD·Filed 2007·Application pending·0 cites
- 4752US2007204959A1Substrate processing method and material for electronic deviceTOKYO ELECTRON LTD·Filed 2007·Application pending·0 cites
- 4852US2007224837A1Method for producing material of electronic deviceTOKYO ELECTRON LTD·Filed 2007·Application pending·0 cites
- 4951US8329596B2Plasma CVD method, method for forming silicon nitride film and method for manufacturing semiconductor deviceKOHNO MASAYUKI·Filed 2012·Granted Dec 11, 2012·0 cites·13 claims
- 5051US7166185B2Forming system for insulation filmTOKYO ELECTRON LTD·Filed 2002·Granted Jan 23, 2007·2 cites·26 claims
Showing the top 50 of 79 patent records by PatentIndex Score.
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