Inventor · disambiguated record
Jan Frederick Schetzina
Also filed as: SCHETZINA JAN F · SCHETZINA JAN FREDERICK
7 granted patents·2,060 citations·filing 1992–1997
91Inventor score
Technology areasH10D
Files withUNIV NORTH CAROLINA STATE7
Top patents by PatentIndex Score
7 records- 0197US6046464AIntegrated heterostructures of group III-V nitride semiconductor materials including epitaxial ohmic contact comprising multiple quantum wellUNIV NORTH CAROLINA STATE·Filed 1997·Granted Apr 4, 2000·722 cites·31 claims
- 0297US5679965AIntegrated heterostructures of Group III-V nitride semiconductor materials including epitaxial ohmic contact, non-nitride buffer layer and methods of fabricating sameUNIV NORTH CAROLINA STATE·Filed 1995·Granted Oct 21, 1997·593 cites·23 claims
- 0397US5670798AIntegrated heterostructures of Group III-V nitride semiconductor materials including epitaxial ohmic contact non-nitride buffer layer and methods of fabricating sameUNIV NORTH CAROLINA STATE·Filed 1995·Granted Sep 23, 1997·567 cites·29 claims
- 0483US5818072AIntegrated heterostructure of group II-VI semiconductor materials including epitaxial ohmic contact and method of fabricating sameUNIV NORTH CAROLINA STATE·Filed 1992·Granted Oct 6, 1998·45 cites·34 claims
- 0583US5294833AIntegrated heterostructure of Group II-VI semiconductor materials including epitaxial ohmic contact and method of fabricating sameUNIV NORTH CAROLINA STATE·Filed 1992·Granted Mar 15, 1994·45 cites·30 claims
- 0680US5366927AMethod of fabricating epitaxially deposited ohmic contacts using group II-VIUNIV NORTH CAROLINA STATE·Filed 1993·Granted Nov 22, 1994·38 cites·37 claims
- 0780US5351255AInverted integrated heterostructure of group II-VI semiconductor materials including epitaxial ohmic contact and method of fabricating sameUNIV NORTH CAROLINA STATE·Filed 1993·Granted Sep 27, 1994·50 cites·26 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →