Inventor · disambiguated record
Mirco Cantoro
Also filed as: CANTORO MIRCO
33 granted patents·2 pending applications·55 citations·filing 2006–2024
95Inventor score
Top patents by PatentIndex Score
35 records- 0195US11843051B2Field effect transistor including multiple aspect trapping ratio structuresSAMSUNG ELECTRONICS CO LTD·Filed 2022·Granted Dec 12, 2023·2 cites·19 claims
- 0290US10020396B2Integrated circuit devices and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2016·Granted Jul 10, 2018·7 cites·15 claims
- 0389US9318491B2Semiconductor fin devices and method of fabricating the semiconductor fin devicesCANTORO MIRCO·Filed 2014·Granted Apr 19, 2016·12 cites·20 claims
- 0488US11018137B2Semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted May 25, 2021·4 cites·18 claims
- 0585US10916655B2Ferroelectric semiconductor device including a ferroelectric and manufacturing method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Feb 9, 2021·4 cites·20 claims
- 0685US10896951B2Semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Jan 19, 2021·4 cites·20 claims
- 0783US10181526B2Field effect transistor including multiple aspect ratio trapping structuresCANTORO MIRCO·Filed 2017·Granted Jan 15, 2019·3 cites·18 claims
- 0882US10418448B2Semiconductor devices including field effect transistors and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Sep 17, 2019·2 cites·14 claims
- 0982US10014300B2Integrated circuit devices having inter-device isolation regions and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Jul 3, 2018·4 cites·20 claims
- 1079US12477792B2Method for manufacturing a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2024·Granted Nov 18, 2025·0 cites·20 claims
- 1174US10211339B2Vertical transistor having a semiconductor pillar penetrating a silicide formed on the substrate surfaceSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Feb 19, 2019·2 cites·19 claims
- 1273US11955516B2Method for manufacturing a semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2023·Granted Apr 9, 2024·0 cites·20 claims
- 1373US2024387527A1Semiconductor device and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2024·Application pending·0 cites
- 1472US10256324B2Semiconductor devices having vertical transistors with aligned gate electrodesSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Apr 9, 2019·1 cites·14 claims
- 1571US9953883B2Semiconductor device including a field effect transistor and method for manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Apr 24, 2018·1 cites·5 claims
- 1670US11569349B2Semiconductor deviceSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Jan 31, 2023·0 cites·20 claims
- 1769US11411111B2Field effect transistor including multiple aspect trapping ratio structuresSAMSUNG ELECTRONICS CO LTD·Filed 2020·Granted Aug 9, 2022·0 cites·15 claims
- 1869US9679975B2Semiconductor devices including field effect transistors and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2015·Granted Jun 13, 2017·1 cites·10 claims
- 1968US9966377B2Semiconductor devices including fin-shaped active patterns in different conductivity type regionsSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted May 8, 2018·1 cites·20 claims
- 2067US10361319B2Integrated circuit devicesSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Jul 23, 2019·1 cites·20 claims
- 2167US9337273B2Graphene-based semiconductor deviceIMEC·Filed 2013·Granted May 10, 2016·2 cites·18 claims
- 2264US10937700B2Semiconductor devicesSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Mar 2, 2021·1 cites·4 claims
- 2364US10868125B2Semiconductor devices including field effect transistors and methods of forming the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Dec 15, 2020·0 cites·16 claims
- 2464US9966375B2Semiconductor deviceCHOI YONG JOON·Filed 2016·Granted May 8, 2018·2 cites·15 claims
- 2563US10276564B2Semiconductor device including vertical channelSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Apr 30, 2019·1 cites·18 claims
- 2662US12132046B2Semiconductor device including separation pattern penetrating gate structure and method of fabricating the sameSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Oct 29, 2024·0 cites·15 claims
- 2762US11488956B2Semiconductor memory deviceSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted Nov 1, 2022·0 cites·20 claims
- 2862US10714397B2Semiconductor device including an active pattern having a lower pattern and a pair of channel patterns disposed thereon and method for manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Jul 14, 2020·0 cites·11 claims
- 2961US11342456B2Ferroelectric semiconductor device including a ferroelectric and manufacturing method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2021·Granted May 24, 2022·0 cites·20 claims
- 3061US10734521B2Field effect transistor including multiple aspect trapping ratio structuresSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Aug 4, 2020·0 cites·7 claims
- 3158US10453756B2Method for manufacturing a semiconductor device including a pair of channel semiconductor patternsSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Oct 22, 2019·0 cites·9 claims
- 3256US10559673B2Semiconductor devices having vertical transistors with aligned gate electrodesSAMSUNG ELECTRONICS CO LTD·Filed 2019·Granted Feb 11, 2020·0 cites·19 claims
- 3355US10461187B2Integrated circuit devices and methods of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2018·Granted Oct 29, 2019·0 cites·18 claims
- 3449US9978881B2Integrated circuit devices and method of manufacturing the sameSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted May 22, 2018·0 cites·20 claims
- 3543US2007202304A1Nanoparticle colloid, method for its production and its use in the growth of carbon nanotubesUNIV CAMBRIDGE TECH·Filed 2006·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →