Inventor · disambiguated record
Feng-Yuan An
Also filed as: AN FENG-YUAN
2 granted patents·1 pending application·2 citations·filing 2003–2008
39Inventor score
Top patents by PatentIndex Score
3 records- 0143US7045876B2Amorphizing ion implant method for forming polysilicon emitter bipolar transistorTAIWAN SEMICONDUCTOR MFG·Filed 2004·Granted May 16, 2006·2 cites·14 claims
- 0236US6740563B1Amorphizing ion implant method for forming polysilicon emitter bipolar transistorTAIWAN SEMICONDUCTOR MFG·Filed 2003·Granted May 25, 2004·0 cites·20 claims
- 0333US2009289299A1High density high performance power transistor layoutCHEN LI-CHENG·Filed 2008·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →