Inventor · disambiguated record

Yasuhiko Oonishi

Also filed as: OONISHI YASUHIKO

24 granted patents·1 pending application·12 citations·filing 2016–2025

91Inventor score

Technology areasH10P H10D H01L H10W

Files withFUJI ELECTRIC CO LTD25

Top patents by PatentIndex Score

25 records

0188US2025359202A1Semiconductor device and method of manufacturing semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2025·Application pending·0 cites
0283US9960235B2Semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2016·Granted May 1, 2018·4 cites·7 claims
0382US12389639B2Semiconductor device and method of manufacturing semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2023·Granted Aug 12, 2025·0 cites·20 claims
0480US10580870B2Method of manufacturing silicon carbide semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2019·Granted Mar 3, 2020·2 cites·4 claims
0574US10439060B2Semiconductor device and method of manufacturing semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2018·Granted Oct 8, 2019·2 cites·4 claims
0674US10418478B2Semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2018·Granted Sep 17, 2019·2 cites·12 claims
0770US11855134B2Semiconductor device and method of manufacturing semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2020·Granted Dec 26, 2023·0 cites·19 claims
0869US11329151B2Insulated-gate semiconductor device and method of manufacturing the sameFUJI ELECTRIC CO LTD·Filed 2018·Granted May 10, 2022·1 cites·14 claims
0969US10096680B2Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2017·Granted Oct 9, 2018·1 cites·18 claims
1057US10840326B2Power semiconductor device using wide bandgap semiconductor material and method of manufacturing power semiconductor device using wide bandgap semiconductor materialFUJI ELECTRIC CO LTD·Filed 2017·Granted Nov 17, 2020·0 cites·10 claims
1157US10692979B2Method of manufacturing semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2019·Granted Jun 23, 2020·0 cites·2 claims
1253US10600872B2Silicon carbide semiconductor device and method of manufacturing silicon carbide semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2018·Granted Mar 24, 2020·0 cites·5 claims
1350US10396161B2Semiconductor device and method of manufacturing semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2016·Granted Aug 27, 2019·0 cites·3 claims
1446US11233124B2Silicon carbide semiconductor device and manufacturing method for silicon carbide semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2017·Granted Jan 25, 2022·0 cites·14 claims
1542US10319820B2Semiconductor device having silicon carbide layer provided on silicon carbide substrateFUJI ELECTRIC CO LTD·Filed 2017·Granted Jun 11, 2019·0 cites·13 claims
1641US10453954B2Semiconductor device having trenches in termination structure region thereof and method for manufacturing the sameFUJI ELECTRIC CO LTD·Filed 2018·Granted Oct 22, 2019·0 cites·10 claims
1741US10319824B2Semiconductor device includes a substrate having a bandgap wider than that of silicon and method of manufacturing semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2017·Granted Jun 11, 2019·0 cites·11 claims
1839US10756200B2Silicon carbide semiconductor element and method of manufacturing silicon carbide semiconductorFUJI ELECTRIC CO LTD·Filed 2017·Granted Aug 25, 2020·0 cites·8 claims
1939US10651270B2Semiconductor device having a trench structureFUJI ELECTRIC CO LTD·Filed 2017·Granted May 12, 2020·0 cites·5 claims
2039US10304930B2Semiconductor device implanted with arsenic and nitrogenFUJI ELECTRIC CO LTD·Filed 2017·Granted May 28, 2019·0 cites·5 claims
2139US10204990B2Semiconductor device and method of manufacturing semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2016·Granted Feb 12, 2019·0 cites·7 claims
2238US11239356B2Semiconductor device and method of manufacturing semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2016·Granted Feb 1, 2022·0 cites·8 claims
2338US10644145B2Semiconductor device and method of manufacturing semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2016·Granted May 5, 2020·0 cites·8 claims
2437US10147791B2Semiconductor device and method of manufacturing semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2016·Granted Dec 4, 2018·0 cites·8 claims
2537US10069004B2Semiconductor device and method of manufacturing semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2016·Granted Sep 4, 2018·0 cites·8 claims

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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →