Inventor · disambiguated record
John Sudijono
Also filed as: SUDIJONO JOHN · SUDIJONO JOHN LEONARD
68 granted patents·30 pending applications·1,025 citations·filing 1998–2025
99Inventor score
Files withCHARTERED SEMICONDUCTOR MFG48APPLIED MATERIALS INC44SEAH BOON MENG2CHARTERED SEMICONDUCTOR MFG CO1GLOBALFOUNDRIES SG PTE LTD1
Top patents by PatentIndex Score
98 records- 0194US11987875B2Semiconductor device patterning methodsAPPLIED MATERIALS INC·Filed 2023·Granted May 21, 2024·2 cites·12 claims
- 0294US6706625B1Copper recess formation using chemical process for fabricating barrier cap for lines and viasCHARTERED SEMICONDUCTOR MFG·Filed 2002·Granted Mar 16, 2004·171 cites·64 claims
- 0394US6683002B1Method to create a copper diffusion deterrent interfaceCHARTERED SEMICONDUCTOR MFG·Filed 2000·Granted Jan 27, 2004·71 cites·7 claims
- 0493US7524755B2Entire encapsulation of Cu interconnects using self-aligned CuSiN filmCHARTERED SEMICONDUCTOR MFG·Filed 2006·Granted Apr 28, 2009·37 cites·18 claims
- 0591US11760768B2Molybdenum(0) precursors for deposition of molybdenum filmsAPPLIED MATERIALS INC·Filed 2021·Granted Sep 19, 2023·2 cites·1 claims
- 0691US7445978B2Method to remove spacer after salicidation to enhance contact etch stop liner stress on MOSCHARTERED SEMICONDUCTOR MFG·Filed 2005·Granted Nov 4, 2008·22 cites·31 claims
- 0790US8177993B2Apparatus and methods for cleaning and drying of wafersSEAH BOON MENG·Filed 2006·Granted May 15, 2012·28 cites·14 claims
- 0889US11946134B2In situ nucleation for nanocrystalline diamond film depositionAPPLIED MATERIALS INC·Filed 2022·Granted Apr 2, 2024·1 cites·14 claims
- 0989US6787452B2Use of amorphous carbon as a removable ARC material for dual damascene fabricationCHARTERED SEMICONDUCTOR MFG·Filed 2002·Granted Sep 7, 2004·51 cites·31 claims
- 1087US11972940B2Area selective carbon-based film depositionAPPLIED MATERIALS INC·Filed 2022·Granted Apr 30, 2024·1 cites·7 claims
- 1187US6355581B1Gas-phase additives for an enhancement of lateral etch component during high density plasma film deposition to improve film gap-fill capabilityCHARTERED SEMICONDUCTOR MFG·Filed 2000·Granted Mar 12, 2002·52 cites·17 claims
- 1286US6583069B1Method of silicon oxide and silicon glass films depositionCHARTERED SEMICONDUCTOR MFG CO·Filed 1999·Granted Jun 24, 2003·49 cites·19 claims
- 1386US6417088B1Method of application of displacement reaction to form a conductive cap layer for flip-chip, COB, and micro metal bondingCHARTERED SEMICONDUCTOR MFG·Filed 2000·Granted Jul 9, 2002·44 cites·22 claims
- 1486US6378759B1Method of application of conductive cap-layer in flip-chip, COB, and micro metal bondingCHARTERED SEMICONDUCTOR MFG·Filed 2000·Granted Apr 30, 2002·37 cites·17 claims
- 1585US11658025B2Chalcogen precursors for deposition of silicon nitrideAPPLIED MATERIALS INC·Filed 2021·Granted May 23, 2023·2 cites·12 claims
- 1684US7256084B2Composite stress spacerCHARTERED SEMICONDUCTOR MFG·Filed 2005·Granted Aug 14, 2007·12 cites·19 claims
- 1784US6720204B2Method of using hydrogen plasma to pre-clean copper surfaces during Cu/Cu or Cu/metal bondingCHARTERED SEMICONDUCTOR MFG·Filed 2002·Granted Apr 13, 2004·38 cites·18 claims
- 1883US11621161B2Selective deposition of a passivation film on a metal surfaceAPPLIED MATERIALS INC·Filed 2020·Granted Apr 4, 2023·1 cites·20 claims
- 1982US12415824B2Molybdenum(0) precursors for deposition of molybdenum filmsAPPLIED MATERIALS INC·Filed 2023·Granted Sep 16, 2025·0 cites·14 claims
- 2082US11569088B2Area-selective atomic layer deposition of passivation layersAPPLIED MATERIALS INC·Filed 2020·Granted Jan 31, 2023·1 cites·21 claims
- 2182US6211040B1Two-step, low argon, HDP CVD oxide deposition processCHARTERED SEMICONDUCTOR MFG·Filed 1999·Granted Apr 3, 2001·80 cites·20 claims
- 2281US7538353B2Composite barrier/etch stop layer comprising oxygen doped SiC and SiC for interconnect structuresCHARTERED SEMICONDUCTOR MFG·Filed 2006·Granted May 26, 2009·11 cites·14 claims
- 2381US2025361605A1Vapor-phase precursor seeding for diamond film depositionAPPLIED MATERIALS INC·Filed 2025·Application pending·0 cites
- 2480US11594416B2Tribological properties of diamond filmsAPPLIED MATERIALS INC·Filed 2020·Granted Feb 28, 2023·1 cites·15 claims
- 2580US6475810B1Method of manufacturing embedded organic stop layer for dual damascene patterningCHARTERED SEMICONDUCTOR MFG·Filed 2000·Granted Nov 5, 2002·24 cites·24 claims
- 2679US7052932B2Oxygen doped SiC for Cu barrier and etch stop layer in dual damascene fabricationCHARTERED SEMICONDUCTOR MFG·Filed 2004·Granted May 30, 2006·28 cites·24 claims
- 2779US6500771B1Method of high-density plasma boron-containing silicate glass film depositionCHARTERED SEMICONDUCTOR MFG·Filed 2000·Granted Dec 31, 2002·24 cites·10 claims
- 2879US2024229231A1In situ nucleation for nanocrystalline diamond film depositionAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 2978US6540841B1Method and apparatus for removing contaminants from the perimeter of a semiconductor substrateCHARTERED SEMICONDUCTOR MFG·Filed 2000·Granted Apr 1, 2003·13 cites·12 claims
- 3078US6451687B1Intermetal dielectric layer for integrated circuitsCHARTERED SEMICONDUCTOR MFG·Filed 2000·Granted Sep 17, 2002·19 cites·10 claims
- 3178US6429117B1Method to create copper traps by modifying treatment on the dielectrics surfaceCHARTERED SEMICONDUCTOR MFG·Filed 2000·Granted Aug 6, 2002·21 cites·34 claims
- 3277US2024271272A1Semiconductor device patterning methodsAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 3376US8143166B2Polishing method with inert gas injectionZHAO FENG·Filed 2008·Granted Mar 27, 2012·5 cites·23 claims
- 3474US6340608B1Method of fabricating copper metal bumps for flip-chip or chip-on-board IC bonding on terminating copper padsCHARTERED SEMICONDUCTOR MFG·Filed 2000·Granted Jan 22, 2002·21 cites·11 claims
- 3572US6350689B1Method to remove copper contamination by using downstream oxygen and chelating agent plasmaCHARTERED SEMICONDUCTOR MFG·Filed 2001·Granted Feb 26, 2002·15 cites·40 claims
- 3671US11894230B2Tribological properties of diamond filmsAPPLIED MATERIALS INC·Filed 2023·Granted Feb 6, 2024·0 cites·6 claims
- 3771US8624329B2Spacer-less low-K dielectric processesLEE YONG MENG·Filed 2009·Granted Jan 7, 2014·5 cites·18 claims
- 3871US2024234127A1Area selective carbon-based film depositionAPPLIED MATERIALS INC·Filed 2024·Application pending·0 cites
- 3970US12442104B2Nanocrystalline diamond with amorphous interfacial layerAPPLIED MATERIALS INC·Filed 2023·Granted Oct 14, 2025·0 cites·17 claims
- 4070US12142477B2Chalcogen precursors for deposition of silicon nitrideAPPLIED MATERIALS INC·Filed 2023·Granted Nov 12, 2024·0 cites·17 claims
- 4169US7999325B2Method to remove spacer after salicidation to enhance contact etch stop liner stress on MOSGLOBALFOUNDRIES SG PTE LTD·Filed 2008·Granted Aug 16, 2011·3 cites·20 claims
- 4268US7615427B2Spacer-less low-k dielectric processesCHARTERED SEMICONDUCTOR MFG·Filed 2006·Granted Nov 10, 2009·3 cites·20 claims
- 4365US12037679B2Method of forming a diamond filmAPPLIED MATERIALS INC·Filed 2021·Granted Jul 16, 2024·0 cites·17 claims
- 4465US6705512B2Method of application of conductive cap-layer in flip-chip, cob, and micro metal bondingCHARTERED SEMICONDUCTOR MFG·Filed 2002·Granted Mar 16, 2004·10 cites·17 claims
- 4563US6813796B2Apparatus and methods to clean copper contamination on wafer edgeCHARTERED SEMICONDUCTOR MFG·Filed 2003·Granted Nov 9, 2004·4 cites·5 claims
- 4663US6365508B1Process without post-etch cleaning-converting polymer and by-products into an inert layerCHARTERED SEMICONDUCTOR MFG·Filed 2000·Granted Apr 2, 2002·11 cites·20 claims
- 4763US2022127717A1Selective Deposition Of A Heterocyclic Passivation Film On A Metal SurfaceAPPLIED MATERIALS INC·Filed 2020·Application pending·0 cites
- 4862US6987321B2Copper diffusion deterrent interfaceCHARTERED SEMICONDUCTOR MFG·Filed 2003·Granted Jan 17, 2006·7 cites·20 claims
- 4962US6872633B2Deposition and sputter etch approach to extend the gap fill capability of HDP CVD process to ≦0.10 micronsCHARTERED SEMICONDUCTOR MFG·Filed 2002·Granted Mar 29, 2005·11 cites·29 claims
- 5062US2025051902A1Methods of forming conformal transition metal dichalcogenide filmsAPPLIED MATERIALS INC·Filed 2023·Application pending·0 cites
Showing the top 50 of 98 patent records by PatentIndex Score.
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