Inventor · disambiguated record
Takeyoshi Nishimura
Also filed as: NISHIMURA TAKEYOSHI
64 granted patents·5 pending applications·518 citations·filing 1990–2024
98Inventor score
Files withFUJI ELECTRIC CO LTD57NISHIMURA TAKEYOSHI3FUJI ELEC DEVICE TECH CO LTD2FUJI ELECTRIC SYSTEMS CO LTD2NIIMURA YASUSHI1
Top patents by PatentIndex Score
69 records- 0195US8482061B2Semiconductor device and the method of manufacturing the sameNISHIMURA TAKEYOSHI·Filed 2011·Granted Jul 9, 2013·25 cites·5 claims
- 0291US9818845B2MOS-driven semiconductor device and method for manufacturing MOS-driven semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2016·Granted Nov 14, 2017·8 cites·9 claims
- 0389US9293564B2Semiconductor device manufacturing methodFUJI ELECTRIC CO LTD·Filed 2015·Granted Mar 22, 2016·8 cites·24 claims
- 0488US9461030B2Semiconductor device and method for producing the sameFUJI ELECTRIC CO LTD·Filed 2014·Granted Oct 4, 2016·8 cites·21 claims
- 0588US5757046AMOS type semiconductor deviceFUJI ELECTRIC CO LTD·Filed 1996·Granted May 26, 1998·79 cites·33 claims
- 0687US10764495B2Image processing apparatus, image processing method, storage medium, system, and electronic apparatusUEHARA HIROYASU·Filed 2018·Granted Sep 1, 2020·4 cites·25 claims
- 0787US5723890AMOS type semiconductor deviceFUJI ELECTRIC CO LTD·Filed 1996·Granted Mar 3, 1998·74 cites·13 claims
- 0885US9548294B2Semiconductor device with temperature-detecting diodeFUJI ELECTRIC CO LTD·Filed 2016·Granted Jan 17, 2017·5 cites·10 claims
- 0985US8952450B2Semiconductor device and the method of manufacturing the sameFUJI ELECTRIC CO LTD·Filed 2013·Granted Feb 10, 2015·4 cites·4 claims
- 1083US7372111B2Semiconductor device with improved breakdown voltage and high current capacityFUJI ELEC DEVICE TECH CO LTD·Filed 2005·Granted May 13, 2008·11 cites·32 claims
- 1181US9935169B2Semiconductor device and method of manufacturing the sameFUJI ELECTRIC CO LTD·Filed 2016·Granted Apr 3, 2018·3 cites·15 claims
- 1281US6246092B1High breakdown voltage MOS semiconductor apparatusFUJI ELECTRIC CO LTD·Filed 1998·Granted Jun 12, 2001·41 cites·22 claims
- 1378US11600722B2Semiconductor element and semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2019·Granted Mar 7, 2023·2 cites·21 claims
- 1477US5097302ASemiconductor device having current detection capabilityFUJI ELECTRIC CO LTD·Filed 1991·Granted Mar 17, 1992·40 cites·20 claims
- 1576US9905652B2Semiconductor device having varying wiring resistanceFUJI ELECTRIC CO LTD·Filed 2017·Granted Feb 27, 2018·2 cites·13 claims
- 1675US11469318B2Superjunction semiconductor device having parallel PN structure with column structure and method of manufacturing the sameFUJI ELECTRIC CO LTD·Filed 2020·Granted Oct 11, 2022·1 cites·14 claims
- 1775US6548865B2High breakdown voltage MOS type semiconductor apparatusFUJI ELECTRIC CO LTD·Filed 2001·Granted Apr 15, 2003·18 cites·16 claims
- 1875US5721148AMethod for manufacturing MOS type semiconductor deviceFUJI ELECTRIC CO LTD·Filed 1996·Granted Feb 24, 1998·49 cites·3 claims
- 1975US5191395AMos type semiconductor device with means to prevent parasitic bipolar transistorFUJI ELECTRIC CO LTD·Filed 1991·Granted Mar 2, 1993·38 cites·5 claims
- 2074US9136352B2Manufacturing method of semiconductor apparatus and semiconductor apparatusNIIMURA YASUSHI·Filed 2010·Granted Sep 15, 2015·4 cites·19 claims
- 2173US9741843B2Semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2015·Granted Aug 22, 2017·2 cites·17 claims
- 2273US9601334B2Semiconductor device and the method of manufacturing the sameFUJI ELECTRIC CO LTD·Filed 2016·Granted Mar 21, 2017·1 cites·2 claims
- 2371US9349826B2Semiconductor device and the method of manufacturing the sameFUJI ELECTRIC CO LTD·Filed 2014·Granted May 24, 2016·1 cites·5 claims
- 2469US10593787B2Semiconductor device and method of manufacturing semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2016·Granted Mar 17, 2020·1 cites·11 claims
- 2567US10396065B2Semiconductor device having a temperature-detecting diodeFUJI ELECTRIC CO LTD·Filed 2016·Granted Aug 27, 2019·1 cites·8 claims
- 2666US7859083B2Semiconductor deviceFUJI ELECTRIC SYSTEMS CO LTD·Filed 2008·Granted Dec 28, 2010·3 cites·13 claims
- 2765US7235841B2Semiconductor deviceFUJI ELEC DEVICE TECH CO LTD·Filed 2004·Granted Jun 26, 2007·11 cites·16 claims
- 2864US2025095996A1Semiconductor device and method of manufacturing semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2024·Application pending·0 cites
- 2963US10439061B2Semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2015·Granted Oct 8, 2019·1 cites·18 claims
- 3063US2025159926A1Semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2024·Application pending·0 cites
- 3162US7871888B2Method of manufacturing semiconductor deviceFUJI ELECTRIC SYSTEMS CO LTD·Filed 2008·Granted Jan 18, 2011·2 cites·6 claims
- 3261US10943997B2Semiconductor device and method of manufacturing semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2020·Granted Mar 9, 2021·0 cites·11 claims
- 3361US2024371993A1Semiconductor device and method of manufacturing semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2024·Application pending·0 cites
- 3460US12414316B2Method of manufacturing silicon carbide semiconductor device and silicon carbide semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2022·Granted Sep 9, 2025·0 cites·11 claims
- 3560US5043779AMetal oxide semiconductor device with well regionFUJI ELECTRIC CO LTD·Filed 1990·Granted Aug 27, 1991·20 cites·2 claims
- 3658US5306937ASemiconductor device having a built-in current-sensing diodeFUJI ELECTRIC CO LTD·Filed 1992·Granted Apr 26, 1994·18 cites·13 claims
- 3757US9601440B2Method for manufacturing semiconductor device and exposure mask used in the same methodFUJI ELECTRIC CO LTD·Filed 2014·Granted Mar 21, 2017·0 cites·3 claims
- 3856US11699727B2Semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2021·Granted Jul 11, 2023·0 cites·14 claims
- 3956US5291050AMOS device having reduced gate-to-drain capacitanceFUJI ELECTRIC CO LTD·Filed 1991·Granted Mar 1, 1994·17 cites·6 claims
- 4055US11545460B2Semiconductor device and method for manufacturing semiconductor device having first and second wires in different diameterFUJI ELECTRIC CO LTD·Filed 2020·Granted Jan 3, 2023·0 cites·11 claims
- 4155US11394881B2Image processing apparatus, image processing method, storage medium, system, and electronic apparatusRICOH CO LTD·Filed 2020·Granted Jul 19, 2022·0 cites·16 claims
- 4255US2023143787A1Semiconductor device and manufacturing method of semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2022·Application pending·0 cites
- 4354US10453917B2Method of manufacturing semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2019·Granted Oct 22, 2019·0 cites·8 claims
- 4452US10381436B2Semiconductor device and method of manufacturing semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2018·Granted Aug 13, 2019·0 cites·5 claims
- 4552US10026812B2Semiconductor device and method of manufacturing the sameFUJI ELECTRIC CO LTD·Filed 2018·Granted Jul 17, 2018·0 cites·5 claims
- 4652US9496370B2Manufacturing method of semiconductor apparatus and semiconductor apparatusFUJI ELECTRIC CO LTD·Filed 2016·Granted Nov 15, 2016·0 cites·1 claims
- 4752US9331194B2Semiconductor device and method for manufacturing semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2013·Granted May 3, 2016·0 cites·7 claims
- 4850US11282946B2Semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2021·Granted Mar 22, 2022·0 cites·24 claims
- 4950US10199460B2Semiconductor device and method of manufacturing semiconductor deviceFUJI ELECTRIC CO LTD·Filed 2017·Granted Feb 5, 2019·0 cites·13 claims
- 5050US9312379B2Manufacturing method of semiconductor apparatus and semiconductor apparatusFUJI ELECTRIC CO LTD·Filed 2015·Granted Apr 12, 2016·0 cites·8 claims
Showing the top 50 of 69 patent records by PatentIndex Score.
Join the waitlist — get patent alerts
Get an alert when Takeyoshi Nishimura files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →