Inventor · disambiguated record
William K. Henson
Also filed as: HENSON WILLIAM K
55 granted patents·10 pending applications·442 citations·filing 2005–2015
98Inventor score
Top patents by PatentIndex Score
65 records- 0198US8138037B2Method and structure for gate height scaling with high-k/metal gate technologyCHUDZIK MICHAEL P·Filed 2010·Granted Mar 20, 2012·43 cites·16 claims
- 0296US8354309B2Method of providing threshold voltage adjustment through gate dielectric stack modificationIBM·Filed 2012·Granted Jan 15, 2013·24 cites·20 claims
- 0395US8299570B2Efuse containing sige stackKIM DEOK-KEE·Filed 2011·Granted Oct 30, 2012·21 cites·13 claims
- 0494US7888197B2Method of forming stressed SOI FET having doped glass box layer using sacrificial stressed layerIBM·Filed 2007·Granted Feb 15, 2011·29 cites·18 claims
- 0594US7838908B2Semiconductor device having dual metal gates and method of manufactureIBM·Filed 2009·Granted Nov 23, 2010·28 cites·14 claims
- 0694US7202513B1Stress engineering using dual pad nitride with selective SOI device architectureIBM·Filed 2005·Granted Apr 10, 2007·30 cites·10 claims
- 0793US7297618B1Fully silicided gate electrodes and method of making the sameIBM·Filed 2006·Granted Nov 20, 2007·18 cites·27 claims
- 0890US8018005B2CMOS (complementary metal oxide semiconductor) devices having metal gate NFETs and poly-silicon gate PFETsIBM·Filed 2010·Granted Sep 13, 2011·11 cites·9 claims
- 0990US7791144B2High performance stress-enhance MOSFET and method of manufactureIBM·Filed 2009·Granted Sep 7, 2010·28 cites·18 claims
- 1089US7749822B2Method of forming a resistor and an FET from the metal portion of a MOSFET metal gate stackIBM·Filed 2007·Granted Jul 6, 2010·17 cites·19 claims
- 1188US8659054B2Method and structure for pFET junction profile with SiGe channelRIM KERN·Filed 2010·Granted Feb 25, 2014·14 cites·19 claims
- 1287US7682917B2Disposable metallic or semiconductor gate spacerIBM·Filed 2008·Granted Mar 23, 2010·11 cites·20 claims
- 1386US8227870B2Method and structure for gate height scaling with high-k/metal gate technologyCHUDZIK MICHAEL P·Filed 2012·Granted Jul 24, 2012·7 cites·10 claims
- 1485US7452784B2Formation of improved SOI substrates using bulk semiconductor wafersIBM·Filed 2006·Granted Nov 18, 2008·11 cites·1 claims
- 1584US8021939B2High-k dielectric and metal gate stack with minimal overlap with isolation region and related methodsIBM·Filed 2007·Granted Sep 20, 2011·9 cites·14 claims
- 1684US8004059B2eFuse containing SiGe stackIBM·Filed 2007·Granted Aug 23, 2011·10 cites·17 claims
- 1783US7960809B2eFuse with partial SiGe layer and design structure thereforIBM·Filed 2009·Granted Jun 14, 2011·10 cites·20 claims
- 1882US8946721B2Structure and method for using high-K material as an etch stop layer in dual stress layer processIBM·Filed 2013·Granted Feb 3, 2015·4 cites·19 claims
- 1982US8222673B2Self-aligned embedded SiGe structure and method of manufacturing the sameGREENE BRIAN J·Filed 2010·Granted Jul 17, 2012·5 cites·11 claims
- 2081US8673757B2Structure and method for using high-k material as an etch stop layer in dual stress layer processHENSON WILLIAM K·Filed 2010·Granted Mar 18, 2014·5 cites·18 claims
- 2181US7538339B2Scalable strained FET device and method of fabricating the sameIBM·Filed 2006·Granted May 26, 2009·7 cites·5 claims
- 2280US8598009B2Self-aligned embedded SiGe structure and method of manufacturing the sameGREENE BRIAN J·Filed 2012·Granted Dec 3, 2013·4 cites·20 claims
- 2380US7709910B2Semiconductor structure for low parasitic gate capacitanceIBM·Filed 2007·Granted May 4, 2010·8 cites·4 claims
- 2478US8268698B2Formation of improved SOI substrates using bulk semiconductor wafersHENSON WILLIAM K·Filed 2011·Granted Sep 18, 2012·4 cites·9 claims
- 2578US8106455B2Threshold voltage adjustment through gate dielectric stack modificationGREENE BRIAN J·Filed 2009·Granted Jan 31, 2012·6 cites·19 claims
- 2678US7943493B2Electrical fuse having a fully silicided fuselink and enhanced flux divergenceIBM·Filed 2010·Granted May 17, 2011·4 cites·9 claims
- 2777US7745855B2Single crystal fuse on air in bulk siliconIBM·Filed 2007·Granted Jun 29, 2010·7 cites·8 claims
- 2876US7943460B2High-K metal gate CMOSIBM·Filed 2009·Granted May 17, 2011·5 cites·7 claims
- 2976US7608489B2High performance stress-enhance MOSFET and method of manufactureIBM·Filed 2006·Granted Oct 27, 2009·12 cites·10 claims
- 3075US8232606B2High-K dielectric and metal gate stack with minimal overlap with isolation regionCHUDZIK MICHAEL P·Filed 2011·Granted Jul 31, 2012·3 cites·7 claims
- 3174US8030709B2Metal gate stack and semiconductor gate stack for CMOS devicesIBM·Filed 2007·Granted Oct 4, 2011·6 cites·12 claims
- 3273US8318565B2High-k dielectric gate structures resistant to oxide growth at the dielectric/silicon substrate interface and methods of manufacture thereofBU HUIMING·Filed 2010·Granted Nov 27, 2012·3 cites·10 claims
- 3372US8507992B2High-K metal gate CMOSMO RENEE T·Filed 2011·Granted Aug 13, 2013·3 cites·12 claims
- 3471US9040399B2Threshold voltage adjustment for thin body MOSFETsBRODSKY MARYJANE·Filed 2011·Granted May 26, 2015·3 cites·5 claims
- 3571US7550364B2Stress engineering using dual pad nitride with selective SOI device architectureIBM·Filed 2007·Granted Jun 23, 2009·4 cites·16 claims
- 3670US7550323B2Electrical fuse with a thinned fuselink middle portionIBM·Filed 2007·Granted Jun 23, 2009·4 cites·11 claims
- 3769US7632724B2Stressed SOI FET having tensile and compressive device regionsIBM·Filed 2007·Granted Dec 15, 2009·4 cites·20 claims
- 3866US7863124B2Residue free patterned layer formation method applicable to CMOS structuresIBM·Filed 2007·Granted Jan 4, 2011·2 cites·31 claims
- 3966US7605077B2Dual metal integration scheme based on full silicidation of the gate electrodeIBM·Filed 2006·Granted Oct 20, 2009·3 cites·12 claims
- 4065US7838963B2Electrical fuse having a fully silicided fuselink and enhanced flux divergenceIBM·Filed 2007·Granted Nov 23, 2010·2 cites·16 claims
- 4162US8575709B2High-k dielectric gate structures resistant to oxide growth at the dielectric/silicon substrate interface and methods of manufacture thereofBU HUIMING·Filed 2012·Granted Nov 5, 2013·1 cites·8 claims
- 4262US8350341B2Method and structure for work function engineering in transistors including a high dielectric constant gate insulator and metal gate (HKMG)IBM·Filed 2010·Granted Jan 8, 2013·1 cites·8 claims
- 4362US7675118B2Semiconductor structure with enhanced performance using a simplified dual stress liner configurationIBM·Filed 2006·Granted Mar 9, 2010·2 cites·22 claims
- 4462US7439123B2Low resistance contact semiconductor device structureIBM·Filed 2005·Granted Oct 21, 2008·1 cites·7 claims
- 4561US8803243B2Complementary metal oxide semiconductor (CMOS) device having gate structures connected by a metal gate conductorLIANG YUE·Filed 2012·Granted Aug 12, 2014·1 cites·9 claims
- 4661US7666790B2Silicide gate field effect transistors and methods for fabrication thereofIBM·Filed 2006·Granted Feb 23, 2010·2 cites·7 claims
- 4757US7485519B2After gate fabrication of field effect transistor having tensile and compressive regionsIBM·Filed 2007·Granted Feb 3, 2009·1 cites·12 claims
- 4855US9252146B2Work function adjustment by carbon implant in semiconductor devices including gate structureIBM·Filed 2014·Granted Feb 2, 2016·0 cites·19 claims
- 4955US9082877B2Complementary metal oxide semiconductor (CMOS) device having gate structures connected by a metal gate conductorIBM·Filed 2014·Granted Jul 14, 2015·0 cites·14 claims
- 5054US7932158B2Formation of improved SOI substrates using bulk semiconductor wafersIBM·Filed 2008·Granted Apr 26, 2011·0 cites·14 claims
Showing the top 50 of 65 patent records by PatentIndex Score.
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