Inventor · disambiguated record
Sang Min Hwang
Also filed as: HWANG SANG MIN
7 granted patents·6 pending applications·12 citations·filing 2008–2017
78Inventor score
Top patents by PatentIndex Score
13 records- 0170US8542543B2Variable resistance memory device having equal resistances between signal paths regardless of location of memory cells within the memory arraySK HYNIX INC·Filed 2013·Granted Sep 24, 2013·4 cites·8 claims
- 0262US9342736B2Electronic device having sensor unit and operating method thereofSAMSUNG ELECTRONICS CO LTD·Filed 2014·Granted May 17, 2016·2 cites·16 claims
- 0360US11256941B2Method for controlling operation of iris sensor and electronic device thereforSAMSUNG ELECTRONICS CO LTD·Filed 2017·Granted Feb 22, 2022·1 cites·19 claims
- 0459US8945949B2Method for fabricating variable resistance memory deviceHWANG SANG MIN·Filed 2012·Granted Feb 3, 2015·1 cites·13 claims
- 0559US8022499B2Semiconductor memory device including cell isolation structure using inactive transistorsHYNIX SEMICONDUCTOR INC·Filed 2009·Granted Sep 20, 2011·2 cites·17 claims
- 0653US8072077B2Semiconductor memory deviceHWANG SANG MIN·Filed 2008·Granted Dec 6, 2011·1 cites·9 claims
- 0748US8456930B2Variable resistance memory device having equal resistances between signal paths regardless of location of memory cells within the memory arrayHWANG SANG MIN·Filed 2010·Granted Jun 4, 2013·1 cites·9 claims
- 0843US2013168628A1Variable resistance memory device and method for fabricating the sameHWANG SANG MIN·Filed 2012·Application pending·0 cites
- 0943US2009273088A1Semiconductor Device and Method for Fabricating the SameHYNIX SEMICONDUCTOR INC·Filed 2008·Application pending·0 cites
- 1039US2009230447A1Semiconductor Device and Method for Manufacturing the SameHYNIX SEMICONDUCTOR INC·Filed 2008·Application pending·0 cites
- 1139US2012045872A1Semiconductor Memory DeviceHWANG SANG MIN·Filed 2011·Application pending·0 cites
- 1236US2012175581A1Switching device and semiconductor memory device including the sameHWANG SANG-MIN·Filed 2011·Application pending·0 cites
- 1333US2010019297A1Multi-Stacked Spin Transfer Torque Magnetic Random Access Memory and Method of Manufacturing the SameHYNIX SEMICONDUCTOR INC·Filed 2008·Application pending·0 cites
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