Inventor · disambiguated record
Michael E. Barsky
Also filed as: BARSKY MICHAEL · BARSKY MICHAEL E · BARSKY MICHAEL EDWARD
15 granted patents·229 citations·filing 2000–2011
93Inventor score
Files withTRW INC7NORTHROP GRUMMAN CORP4SANDHU RAJINDER RANDY2NORTHROP GRUMMAN SPACE & MSN1NORTHROP GRUMMAN SYSTEMS CORP1
Top patents by PatentIndex Score
15 records- 0192US6515316B1Partially relaxed channel HEMT deviceTRW INC·Filed 2000·Granted Feb 4, 2003·93 cites·9 claims
- 0280US6551905B1Wafer adhesive for semiconductor dry etch applicationsTRW INC·Filed 2000·Granted Apr 22, 2003·25 cites·20 claims
- 0378US6638366B2Automated spray cleaning apparatus for semiconductor wafersNORTHROP GRUMMAN CORP·Filed 2001·Granted Oct 28, 2003·28 cites·17 claims
- 0478US6452221B1Enhancement mode deviceTRW INC·Filed 2000·Granted Sep 17, 2002·26 cites·10 claims
- 0577US8026132B2Leakage barrier for GaN based HEMT active deviceNORTHROP GRUMMAN SYSTEMS CORP·Filed 2008·Granted Sep 27, 2011·6 cites·6 claims
- 0672US6524899B1Process for forming a large area, high gate current HEMT diodeTRW INC·Filed 2000·Granted Feb 25, 2003·15 cites·11 claims
- 0765US7709860B2High electron mobility transistor semiconductor device and fabrication method thereofNORTHROP GRUMMAN SPACE & MSN·Filed 2009·Granted May 4, 2010·2 cites·5 claims
- 0865US6245687B1Precision wide band gap semiconductor etchingTRW INC·Filed 2000·Granted Jun 12, 2001·11 cites·9 claims
- 0964US7041579B2Hard substrate wafer sawing processNORTHROP GRUMMAN CORP·Filed 2003·Granted May 9, 2006·10 cites·18 claims
- 1055US6383826B1Method for determining etch depthTRW INC·Filed 2000·Granted May 7, 2002·6 cites·2 claims
- 1154US6710379B2Fully relaxed channel HEMT deviceNORTHROP GRUMMAN CORP·Filed 2003·Granted Mar 23, 2004·6 cites·2 claims
- 1246US6764573B2Wafer thinning techniquesNORTHROP GRUMMAN CORP·Filed 2001·Granted Jul 20, 2004·1 cites·16 claims
- 1344US8809137B2Leakage barrier for GaN based HEMT active deviceSANDHU RAJINDER RANDY·Filed 2011·Granted Aug 19, 2014·0 cites·18 claims
- 1442US8809907B2Leakage barrier for GaN based HEMT active deviceSANDHU RAJINDER RANDY·Filed 2006·Granted Aug 19, 2014·0 cites·13 claims
- 1532US6396679B1Single-layer dielectric structure with rounded corners, and circuits including such structuresTRW INC·Filed 2000·Granted May 28, 2002·0 cites·12 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →