Inventor · disambiguated record
Toshiro Hayakawa
Also filed as: HAYAKAWA TOSHIRO
79 granted patents·2 pending applications·1,003 citations·filing 1983–2005
99Inventor score
Top patents by PatentIndex Score
81 records- 0189US5033043AOptical head apparatus for optical disksEASTMAN KODAK CO·Filed 1989·Granted Jul 16, 1991·36 cites·4 claims
- 0288US4750183ASemiconductor laser deviceSHARP KK·Filed 1987·Granted Jun 7, 1988·41 cites·3 claims
- 0388US4745612ASeparate confinement heterostructure semiconductor laser deviceSHARP KK·Filed 1986·Granted May 17, 1988·41 cites·7 claims
- 0487US4567060AMethod of producing a semiconductor laser deviceSHARP KK·Filed 1984·Granted Jan 28, 1986·42 cites·10 claims
- 0584US5022036ASemiconductor laser deviceSHARP KK·Filed 1989·Granted Jun 4, 1991·31 cites·4 claims
- 0684US4890293ASemiconductor laser deviceSHARP KK·Filed 1988·Granted Dec 26, 1989·32 cites·2 claims
- 0784US4845724ASemiconductor laser device having optical guilding layers of unequal resistanceSHARP KK·Filed 1987·Granted Jul 4, 1989·32 cites·4 claims
- 0881US6594297B1Laser apparatus in which surface-emitting semiconductor is excited with semiconduct laser element and high-order oscillation modes are suppressedFUJI PHOTO FILM CO LTD·Filed 2000·Granted Jul 15, 2003·30 cites·24 claims
- 0979US6798804B2Laser apparatus including surface-emitting semiconductor excited with semiconductor laser element, and directly modulatedFUJI PHOTO FILM CO LTD·Filed 2001·Granted Sep 28, 2004·15 cites·10 claims
- 1078US6362515B2GaN substrate including wide low-defect region for use in semiconductor elementFUJI PHOTO FILM CO LTD·Filed 2001·Granted Mar 26, 2002·31 cites·29 claims
- 1176US5289484ALaser diodeEASTMAN KODAK CO·Filed 1992·Granted Feb 22, 1994·34 cites·2 claims
- 1276US4916708ASemiconductor light-emitting devicesEASTMAN KODAK CO·Filed 1989·Granted Apr 10, 1990·21 cites·7 claims
- 1374US6999486B2Semiconductor laser element and semiconductor laserFUJI PHOTO FILM CO LTD·Filed 2004·Granted Feb 14, 2006·9 cites·20 claims
- 1474US6738403B2Semiconductor laser element and semiconductor laserFUJI PHOTO FILM CO LTD·Filed 2001·Granted May 18, 2004·10 cites·10 claims
- 1572US7062311B1Fluorescence observing apparatusFUJI PHOTO FILM CO LTD·Filed 2000·Granted Jun 13, 2006·57 cites·27 claims
- 1672US6885687B2Semiconductor laser module having optical wavelength conversion element and semiconductor laser element which includes quantum-well sublayers having different thicknesses and/or compositionsFUJI PHOTO FILM CO LTD·Filed 2001·Granted Apr 26, 2005·11 cites·35 claims
- 1771US6567444B2High-power semiconductor laser device in which near-edge portions of active layer are removedFUJI PHOTO FILM CO LTD·Filed 2001·Granted May 20, 2003·10 cites·3 claims
- 1870US5260959ANarrow beam divergence laser diodeEASTMAN KODAK CO·Filed 1992·Granted Nov 9, 1993·26 cites·3 claims
- 1969US4835783ASemiconductor laserSHARP KK·Filed 1987·Granted May 30, 1989·16 cites·15 claims
- 2068US4852111ASemiconductor laser deviceSHARP KK·Filed 1987·Granted Jul 25, 1989·14 cites·6 claims
- 2167US7226175B2Image exposure device and laser exposure device applied theretoFUJIFILM CORP·Filed 2005·Granted Jun 5, 2007·2 cites·16 claims
- 2267US6625190B1Semiconductor laser device having thickened impurity-doped aluminum-free optical waveguide layersFUJI PHOTO FILM CO LTD·Filed 2000·Granted Sep 23, 2003·8 cites·6 claims
- 2366US4569721AMethod for the production of semiconductor lasersSHARP KK·Filed 1984·Granted Feb 11, 1986·14 cites·6 claims
- 2466US4545057AWindow structure of a semiconductor laserSHARP KK·Filed 1983·Granted Oct 1, 1985·14 cites·8 claims
- 2565US6977780B2Image exposure device and laser exposure device applied theretoFUJI PHOTO FILM CO LTD·Filed 2002·Granted Dec 20, 2005·5 cites·8 claims
- 2665US6778573B2Fundamental-transverse-mode index-guided semiconductor laser device having upper optical waveguide layer thinner than lower optical waveguide layerFUJI PHOTO FILM CO LTD·Filed 2001·Granted Aug 17, 2004·7 cites·15 claims
- 2765US6683324B2Semiconductor laser device in which thicknesses of optical guide region and AlGaN cladding layers satisfy predetermined conditionFUJI PHOTO FILM CO LTD·Filed 2001·Granted Jan 27, 2004·7 cites·6 claims
- 2863US6728285B2Stripe type semiconductor light emitting element having InGan active layer, combined with optical resonator including wavelength selection elementFUJI PHOTO FILM CO LTD·Filed 2003·Granted Apr 27, 2004·5 cites·7 claims
- 2963US4905246ASemiconductor laser deviceSHARP KK·Filed 1988·Granted Feb 27, 1990·13 cites·3 claims
- 3063US4787089AQuantum well semiconductor laser deviceSHARP KK·Filed 1987·Granted Nov 22, 1988·13 cites·2 claims
- 3163US4637029ASemiconductor laserSHARP KK·Filed 1984·Granted Jan 13, 1987·16 cites·7 claims
- 3260US7104704B2Transmission apparatus using a plastic fiberFUJI PHOTO FILM CO LTD·Filed 2003·Granted Sep 12, 2006·5 cites·20 claims
- 3360US5084892AWide gain region laser diodeEASTMAN KODAK CO·Filed 1991·Granted Jan 28, 1992·17 cites·15 claims
- 3460US4901326ASemiconductor laser deviceSHARP KK·Filed 1988·Granted Feb 13, 1990·12 cites·12 claims
- 3560US4694460AStripe geometry semiconductor laser deviceSHARP KK·Filed 1985·Granted Sep 15, 1987·12 cites·17 claims
- 3658US7095430B2Image exposing apparatus and image exposing methodFUJI PHOTO FILM CO LTD·Filed 2002·Granted Aug 22, 2006·3 cites·11 claims
- 3758US6433345B1Fluorescence observing apparatusFUJI PHOTO FILM CO LTD·Filed 2000·Granted Aug 13, 2002·16 cites·22 claims
- 3858US4887274ADeterioration-resistant superlattice semiconductor laser deviceSHARP KK·Filed 1987·Granted Dec 12, 1989·11 cites·3 claims
- 3957US7113530B2Gallium nitride based semiconductor laser and image exposure deviceFUJI PHOTO FILM CO LTD·Filed 2002·Granted Sep 26, 2006·6 cites·27 claims
- 4056US5856994ALaser-diode-pumped solid-state laser using index-guided type multi-transverse mode broad area laserFUJI PHOTO FILM CO LTD·Filed 1996·Granted Jan 5, 1999·18 cites·8 claims
- 4155US5299219AStripe-type laser diode used as a light sourceEASTMAN KODAK CO·Filed 1992·Granted Mar 29, 1994·14 cites·11 claims
- 4255US4894836ASemiconductor deviceSHARP KK·Filed 1988·Granted Jan 16, 1990·15 cites·2 claims
- 4354US6700912B2High-output semiconductor laser element, high-output semiconductor laser apparatus and method of manufacturing the sameFUJI PHOTO FILM CO LTD·Filed 2001·Granted Mar 2, 2004·3 cites·12 claims
- 4454US4860297AQuantum well semiconductor laser deviceSHARP KK·Filed 1987·Granted Aug 22, 1989·13 cites·5 claims
- 4553US4841533ASemiconductor laser device having a graded index waveguideSHARP KK·Filed 1986·Granted Jun 20, 1989·9 cites·3 claims
- 4653US4759024ASemiconductor laser device having an oscillation wavelength in the visible short-wavelength regionSHARP KK·Filed 1986·Granted Jul 19, 1988·9 cites·5 claims
- 4753US4746181AOptical semiconductor deviceSHARP KK·Filed 1985·Granted May 24, 1988·13 cites·5 claims
- 4851US6888875B2Light source apparatus equipped with a GaN type semiconductor laser, a method of eliminating stray light, and an image forming apparatusFUJI PHOTO FILM CO LTD·Filed 2002·Granted May 3, 2005·2 cites·22 claims
- 4951US6888165B2Light-emitting diodeFUJI PHOTO FILM CO LTD·Filed 2001·Granted May 3, 2005·3 cites·19 claims
- 5050US7161611B2Exposure systemFUJI PHOTO FILM CO LTD·Filed 2004·Granted Jan 9, 2007·4 cites·12 claims
Showing the top 50 of 81 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →