Inventor · disambiguated record
Yoshimi Yamashita
Also filed as: YAMASHITA YOSHIMI
16 granted patents·2 pending applications·263 citations·filing 1980–2011
94Inventor score
Top patents by PatentIndex Score
18 records- 0192US6351410B1Ferromagnetic tunnel junction random access memory, spin valve random access memory, single ferromagnetic layer random access memory, and memory cell array using the sameFUJITSU LTD·Filed 2000·Granted Feb 26, 2002·70 cites·35 claims
- 0291US9125811B2Nanofiber laminate sheetTOJO TAKEHIKO·Filed 2011·Granted Sep 8, 2015·15 cites·9 claims
- 0386US7910955B2Semiconductor device having MIS structure and its manufacture methodFUJITSU LTD·Filed 2007·Granted Mar 22, 2011·15 cites·4 claims
- 0481US5276724AX-ray exposure apparatusFUJITSU LTD·Filed 1992·Granted Jan 4, 1994·46 cites·5 claims
- 0577US8642172B2Nanofiber sheetTOJO TAKEHIKO·Filed 2009·Granted Feb 4, 2014·3 cites·9 claims
- 0676US4601561AAutomatic housing type electronic flashlight device of a folding type cameraFUJI PHOTO FILM CO LTD·Filed 1984·Granted Jul 22, 1986·13 cites·6 claims
- 0775US4597656AFolding type cameraFUJI PHOTO FILM CO LTD·Filed 1984·Granted Jul 1, 1986·12 cites·7 claims
- 0867US7019336B2Semiconductor device and method for manufacturing the sameFUJITSU LTD·Filed 2004·Granted Mar 28, 2006·13 cites·20 claims
- 0960US8501665B2Method for manufacturing film catalystMATSUI KUNIO·Filed 2009·Granted Aug 6, 2013·1 cites·5 claims
- 1059US6936487B2Semiconductor device with ohmic electrode formed on compound semiconductor having wide band gap and its manufacture methodFUJITSU LTD·Filed 2003·Granted Aug 30, 2005·7 cites·12 claims
- 1156US4849368AMethod of producing a two-dimensional electron gas semiconductor deviceFUJITSU LTD·Filed 1988·Granted Jul 18, 1989·21 cites·5 claims
- 1251US4742379AHEMT with etch-stopFUJITSU LTD·Filed 1984·Granted May 3, 1988·15 cites·10 claims
- 1349US4996700AIrradiation equipment for applying synchrotron radiationFUJITSU LTD·Filed 1989·Granted Feb 26, 1991·11 cites·24 claims
- 1444US2005280027A1Semiconductor device with ohmic electrode formed on compound semiconductor having wide band gap and its manufacture methodFUJITSU LTD·Filed 2005·Application pending·0 cites
- 1541US2013125912A1NanofiberTOJO TAKEHIKO·Filed 2011·Application pending·0 cites
- 1640US4443704AMethod of electron beam exposureFUJITSU LTD·Filed 1982·Granted Apr 17, 1984·10 cites·5 claims
- 1732US4306762AReflecting apparatus in an optical systemTOKINA OPTICAL·Filed 1980·Granted Dec 22, 1981·7 cites·4 claims
- 1830US4578343AMethod for producing field effect type semiconductor deviceFUJITSU LTD·Filed 1985·Granted Mar 25, 1986·4 cites·9 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →