Inventor · disambiguated record
Roman W. Olac-Vaw
Also filed as: OLAC-VAW ROMAN · OLAC-VAW ROMAN W
22 granted patents·3 pending applications·38 citations·filing 2013–2024
93Inventor score
Files withINTEL CORP25
Top patents by PatentIndex Score
25 records- 0197US11335601B2Non-planar I/O and logic semiconductor devices having different workfunction on common substrateINTEL CORP·Filed 2020·Granted May 17, 2022·6 cites·24 claims
- 0297US10892192B2Non-planar I/O and logic semiconductor devices having different workfunction on common substrateINTEL CORP·Filed 2020·Granted Jan 12, 2021·5 cites·20 claims
- 0396US11823954B2Non-planar I/O and logic semiconductor devices having different workfunction on common substrateINTEL CORP·Filed 2022·Granted Nov 21, 2023·2 cites·24 claims
- 0491US10692771B2Non-planar I/O and logic semiconductor devices having different workfunction on common substrateINTEL CORP·Filed 2019·Granted Jun 23, 2020·4 cites·20 claims
- 0589US2025098275A1Non-planar i/o and logic semiconductor devices having different workfunction on common substrateINTEL CORP·Filed 2024·Application pending·0 cites
- 0685US12191207B2Non-planar I/O and logic semiconductor devices having different workfunction on common substrateINTEL CORP·Filed 2023·Granted Jan 7, 2025·0 cites·20 claims
- 0784US10229853B2Non-planar I/O and logic semiconductor devices having different workfunction on common substrateINTEL CORP·Filed 2013·Granted Mar 12, 2019·4 cites·14 claims
- 0883US9947585B2Multi-gate transistor with variably sized finINTEL CORP·Filed 2014·Granted Apr 17, 2018·5 cites·24 claims
- 0981US10756210B2Depletion mode gate in ultrathin FINFET based architectureINTEL CORP·Filed 2016·Granted Aug 25, 2020·3 cites·10 claims
- 1078US10192969B2Transistor gate metal with laterally graduated work functionINTEL CORP·Filed 2014·Granted Jan 29, 2019·4 cites·11 claims
- 1172US10950606B2Dual fin endcap for self-aligned gate edge (SAGE) architecturesINTEL CORP·Filed 2016·Granted Mar 16, 2021·2 cites·27 claims
- 1268US10964690B2Resistor between gates in self-aligned gate edge architectureINTEL CORP·Filed 2017·Granted Mar 30, 2021·1 cites·20 claims
- 1368US10892261B2Metal resistor and self-aligned gate edge (SAGE) architecture having a metal resistorINTEL CORP·Filed 2016·Granted Jan 12, 2021·1 cites·15 claims
- 1467US10811751B2Monolithic splitter using re-entrant poly silicon waveguidesINTEL CORP·Filed 2016·Granted Oct 20, 2020·1 cites·25 claims
- 1555US2019097057A1Non-linear fin-based devicesINTEL CORP·Filed 2018·Application pending·0 cites
- 1652US10761264B2Transmission lines using bending fins from local stressINTEL CORP·Filed 2016·Granted Sep 1, 2020·0 cites·25 claims
- 1752US10164115B2Non-linear fin-based devicesINTEL CORP·Filed 2014·Granted Dec 25, 2018·0 cites·22 claims
- 1851US11562999B2Cost effective precision resistor using blocked DEPOP method in self-aligned gate endcap (SAGE) architectureINTEL CORP·Filed 2018·Granted Jan 24, 2023·0 cites·11 claims
- 1949US10854757B2FINFET based junctionless wrap around structureINTEL CORP·Filed 2016·Granted Dec 1, 2020·0 cites·20 claims
- 2048US10763209B2MOS antifuse with void-accelerated breakdownINTEL CORP·Filed 2014·Granted Sep 1, 2020·0 cites·21 claims
- 2146US11075286B2Hybrid finfet structure with bulk source/drain regionsINTEL CORP·Filed 2016·Granted Jul 27, 2021·0 cites·21 claims
- 2244US10930729B2Fin-based thin film resistorINTEL CORP·Filed 2016·Granted Feb 23, 2021·0 cites·25 claims
- 2342US2019348516A1Work function material recess for threshold voltage tuning in finfetsINTEL CORP·Filed 2018·Application pending·0 cites
- 2440US10784378B2Ultra-scaled fin pitch having dual gate dielectricsINTEL CORP·Filed 2016·Granted Sep 22, 2020·0 cites·12 claims
- 2537US11967615B2Dual threshold voltage (VT) channel devices and their methods of fabricationINTEL CORP·Filed 2015·Granted Apr 23, 2024·0 cites·10 claims
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