Inventor · disambiguated record
Jonathan K. Abrokwah
Also filed as: ABROKWAH JONATHAN · ABROKWAH JONATHAN K · ABROKWAH JONATHAN KWADWO
49 granted patents·2 pending applications·1,233 citations·filing 1984–2017
99Inventor score
Files withMOTOROLA INC30FREESCALE SEMICONDUCTOR INC8AVAGO TECHNOLOGIES GENERAL IP6HONEYWELL INC3ABROKWAH JONATHAN K2
Top patents by PatentIndex Score
51 records- 0195US7683733B2Balun transformer with improved harmonic suppressionFREESCALE SEMICONDUCTOR INC·Filed 2008·Granted Mar 23, 2010·29 cites·14 claims
- 0294US7305223B2Radio frequency circuit with integrated on-chip radio frequency signal couplerFREESCALE SEMICONDUCTOR INC·Filed 2004·Granted Dec 4, 2007·112 cites·12 claims
- 0392US5480829AMethod of making a III-V complementary heterostructure device with compatible non-gold ohmic contactsMOTOROLA INC·Filed 1993·Granted Jan 2, 1996·93 cites·12 claims
- 0488US8941218B1Passivation for group III-V semiconductor devices having a plated metal layer over an interlayer dielectric layerAVAGO TECHNOLOGIES GENERAL IP·Filed 2013·Granted Jan 27, 2015·13 cites·19 claims
- 0588US6113690AMethod of preparing crystalline alkaline earth metal oxides on a Si substrateMOTOROLA INC·Filed 1998·Granted Sep 5, 2000·61 cites·27 claims
- 0687US5606184AHeterostructure field effect device having refractory ohmic contact directly on channel layer and method for makingMOTOROLA INC·Filed 1995·Granted Feb 25, 1997·70 cites·20 claims
- 0786US6022410AAlkaline-earth metal silicides on siliconMOTOROLA INC·Filed 1998·Granted Feb 8, 2000·53 cites·22 claims
- 0886US5907792AMethod of forming a silicon nitride layerMOTOROLA INC·Filed 1997·Granted May 25, 1999·84 cites·14 claims
- 0985US5060031AComplementary heterojunction field effect transistor with an anisotype N+ ga-channel devicesMOTOROLA INC·Filed 1990·Granted Oct 22, 1991·63 cites·12 claims
- 1083US7961063B2Balun signal transformer and method of formingFREESCALE SEMICONDUCTOR INC·Filed 2008·Granted Jun 14, 2011·12 cites·18 claims
- 1182US5444016AMethod of making ohmic contacts to a complementary III-V semiconductor deviceFiled 1993·Granted Aug 22, 1995·51 cites·6 claims
- 1278US4814851AHigh transconductance complementary (Al,Ga)As/gas heterostructure insulated gate field-effect transistorHONEYWELL INC·Filed 1988·Granted Mar 21, 1989·37 cites·19 claims
- 1376US5614739AHIGFET and methodMOTOROLA INC·Filed 1995·Granted Mar 25, 1997·52 cites·7 claims
- 1475US6465297B1Method of manufacturing a semiconductor component having a capacitorMOTOROLA INC·Filed 2000·Granted Oct 15, 2002·18 cites·21 claims
- 1574US6368929B1Method of manufacturing a semiconductor component and semiconductor component thereofMOTOROLA INC·Filed 2000·Granted Apr 9, 2002·16 cites·12 claims
- 1670US8853743B2Pseudomorphic high electron mobility transistor comprising doped low temperature buffer layerAVAGO TECHNOLOGIES GENERAL IP·Filed 2012·Granted Oct 7, 2014·2 cites·20 claims
- 1770US6803248B2Chemistry for etching quaternary interface layers on InGaAsP mostly formed between GaAs and InxGa(1-x)P layersFREESCALE SEMICONDUCTOR INC·Filed 2001·Granted Oct 12, 2004·12 cites·35 claims
- 1870US5116774AHeterojunction method and structureMOTOROLA INC·Filed 1991·Granted May 26, 1992·29 cites·12 claims
- 1969US5937285AMethod of fabricating submicron FETs with low temperature group III-V materialMOTOROLA INC·Filed 1997·Granted Aug 10, 1999·38 cites·25 claims
- 2068US5597768AMethod of forming a Ga2 O3 dielectric layerMOTOROLA INC·Filed 1996·Granted Jan 28, 1997·32 cites·14 claims
- 2166US5514891AN-type HIGFET and methodMOTOROLA INC·Filed 1995·Granted May 7, 1996·22 cites·8 claims
- 2265US6030453AIII-V epitaxial wafer productionMOTOROLA INC·Filed 1997·Granted Feb 29, 2000·31 cites·10 claims
- 2365US5243206ALogic circuit using vertically stacked heterojunction field effect transistorsMOTOROLA INC·Filed 1991·Granted Sep 7, 1993·25 cites·15 claims
- 2464US5739557ARefractory gate heterostructure field effect transistorMOTOROLA INC·Filed 1995·Granted Apr 14, 1998·26 cites·16 claims
- 2563US6110840AMethod of passivating the surface of a Si substrateMOTOROLA INC·Filed 1998·Granted Aug 29, 2000·28 cites·25 claims
- 2663US6025281APassivation of oxide-compound semiconductor interfacesMOTOROLA INC·Filed 1997·Granted Feb 15, 2000·33 cites·10 claims
- 2763US4729000ALow power AlGaAs/GaAs complementary FETs incorporating InGaAs n-channel gatesHONEYWELL INC·Filed 1986·Granted Mar 1, 1988·20 cites·15 claims
- 2862US7842587B2III-V MOSFET fabrication and deviceFREESCALE SEMICONDUCTOR INC·Filed 2008·Granted Nov 30, 2010·3 cites·13 claims
- 2962US5945718ASelf-aligned metal-oxide-compound semiconductor device and method of fabricationMOTOROLA INC·Filed 1998·Granted Aug 31, 1999·24 cites·18 claims
- 3060US5142349ASelf-doped high performance complementary heterojunction field effect transistorMOTOROLA INC·Filed 1991·Granted Aug 25, 1992·20 cites·20 claims
- 3156US6159834AMethod of forming a gate quality oxide-compound semiconductor structureMOTOROLA INC·Filed 1998·Granted Dec 12, 2000·20 cites·27 claims
- 3256US5902130AThermal processing of oxide-compound semiconductor structuresMOTOROLA INC·Filed 1997·Granted May 11, 1999·20 cites·18 claims
- 3355US6094295AUltraviolet transmitting oxide with metallic oxide phase and method of fabricationMOTOROLA INC·Filed 1998·Granted Jul 25, 2000·18 cites·12 claims
- 3454US7935607B2Integrated passive device with a high resistivity substrate and method for forming the sameFREESCALE SEMICONDUCTOR INC·Filed 2007·Granted May 3, 2011·2 cites·17 claims
- 3554US4550031AControl of Si doping in GaAs, (Al,Ga)As and other compound semiconductors during MBE growthHONEYWELL INC·Filed 1984·Granted Oct 29, 1985·8 cites·12 claims
- 3650US9508661B2Moisture barrier for semiconductor structures with stress reliefAVAGO TECHNOLOGIES GENERAL IP·Filed 2014·Granted Nov 29, 2016·0 cites·45 claims
- 3750US5895929ALow subthreshold leakage current HFETMOTOROLA INC·Filed 1998·Granted Apr 20, 1999·12 cites·19 claims
- 3848US8105925B2Method for forming an insulated gate field effect deviceABROKWAH JONATHAN K·Filed 2008·Granted Jan 31, 2012·0 cites·16 claims
- 3947US9576920B2Moisture barrier for semiconductor structures with stress reliefAVAGO TECHNOLOGIES GENERAL IP·Filed 2016·Granted Feb 21, 2017·0 cites·28 claims
- 4046US8847280B2Insulated gate field effect transistorsABROKWAH JONATHAN K·Filed 2011·Granted Sep 30, 2014·0 cites·19 claims
- 4146US5904553AFabrication method for a gate quality oxide-compound semiconductor structureMOTOROLA INC·Filed 1997·Granted May 18, 1999·12 cites·10 claims
- 4244US5693544AN-type higfet and methodMOTOROLA INC·Filed 1996·Granted Dec 2, 1997·8 cites·17 claims
- 4343US10332805B2Semiconductor structure with strain reductionAVAGO TECHNOLOGIES GENERAL IP·Filed 2017·Granted Jun 25, 2019·0 cites·19 claims
- 4442US2007082505A1Method of forming an electrically insulating layer on a compound semiconductorFREESCALE SEMICONDUCTOR INC·Filed 2005·Application pending·0 cites
- 4539US6855965B2Method of manufacturing a semiconductor component and semiconductor component thereofFREESCALE SEMICONDUCTOR INC·Filed 2001·Granted Feb 15, 2005·0 cites·20 claims
- 4637US5539248ASemiconductor device with improved insulating/passivating layer of indium gallium fluoride (InGaF)MOTOROLA INC·Filed 1995·Granted Jul 23, 1996·6 cites·4 claims
- 4736US5512518AMethod of manufacture of multilayer dielectric on a III-V substrateMOTOROLA INC·Filed 1994·Granted Apr 30, 1996·8 cites·13 claims
- 4836US5478437ASelective processing using a hydrocarbon and hydrogenMOTOROLA INC·Filed 1994·Granted Dec 26, 1995·7 cites·22 claims
- 4936US2019006459A1High-Dielectric Constant Capacitor Structures on III-V SubstratesAVAGO TECHNOLOGIES GENERAL IP·Filed 2017·Application pending·0 cites
- 5035US8901606B2Pseudomorphic high electron mobility transistor (pHEMT) comprising low temperature buffer layerPERKINS NATE·Filed 2012·Granted Dec 2, 2014·0 cites·23 claims
Showing the top 50 of 51 patent records by PatentIndex Score.
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