Inventor · disambiguated record
John H. Zhang
Also filed as: ZHANG JOHN · ZHANG JOHN H · ZHANG JOHN HONGGUANG · ZHANG JOHN J
220 granted patents·29 pending applications·1,481 citations·filing 2002–2025
99Inventor score
Files withST MICROELECTRONICS INC128IBM39GLOBALFOUNDRIES INC32ZHANG JOHN H19HEFECHIP CORPORATION LTD7
Top patents by PatentIndex Score
249 records- 0199US9640636B1Methods of forming replacement gate structures and bottom and top source/drain regions on a vertical transistor deviceGLOBALFOUNDRIES INC·Filed 2016·Granted May 2, 2017·88 cites·24 claims
- 0299US9536793B1Self-aligned gate-first VFETs using a gate spacer recessGLOBALFOUNDRIES INC·Filed 2016·Granted Jan 3, 2017·74 cites·13 claims
- 0399US9385195B1Vertical gate-all-around TFETST MICROELECTRONICS INC·Filed 2015·Granted Jul 5, 2016·93 cites·8 claims
- 0498US11538720B2Stacked transistors with different channel widthsTESSERA LLC·Filed 2020·Granted Dec 27, 2022·5 cites·17 claims
- 0598US10516064B1Multiple width nanosheet devicesIBM·Filed 2018·Granted Dec 24, 2019·21 cites·20 claims
- 0698US10461186B1Methods of forming vertical field effect transistors with self-aligned contacts and the resulting structuresGLOBALFOUNDRIES INC·Filed 2018·Granted Oct 29, 2019·28 cites·20 claims
- 0798US9812365B1Methods of cutting gate structures on transistor devicesGLOBALFOUNDRIES INC·Filed 2016·Granted Nov 7, 2017·26 cites·18 claims
- 0898US9799751B1Methods of forming a gate structure on a vertical transistor deviceGLOBALFOUNDRIES INC·Filed 2016·Granted Oct 24, 2017·28 cites·30 claims
- 0998US9773708B1Devices and methods of forming VFET with self-aligned replacement metal gates aligned to top spacer post top source drain EPIGLOBALFOUNDRIES INC·Filed 2016·Granted Sep 26, 2017·75 cites·19 claims
- 1098US9660028B1Stacked transistors with different channel widthsIBM·Filed 2016·Granted May 23, 2017·93 cites·16 claims
- 1198US9653585B2Vertical gate-all-around TFETST MICROELECTRONICS INC·Filed 2016·Granted May 16, 2017·22 cites·25 claims
- 1298US9530863B1Methods of forming vertical transistor devices with self-aligned replacement gate structuresGLOBALFOUNDRIES INC·Filed 2016·Granted Dec 27, 2016·68 cites·19 claims
- 1398US9530866B1Methods of forming vertical transistor devices with self-aligned top source/drain conductive contactsGLOBALFOUNDRIES INC·Filed 2016·Granted Dec 27, 2016·128 cites·16 claims
- 1498US9466452B1Integrated cantilever switchST MICROELECTRONICS INC·Filed 2015·Granted Oct 11, 2016·26 cites·21 claims
- 1597US10629538B2Modular interconnects for gate-all-around transistorsST MICROELECTRONICS INC·Filed 2018·Granted Apr 21, 2020·16 cites·20 claims
- 1697US10431495B1Semiconductor device with local connectionIBM·Filed 2018·Granted Oct 1, 2019·18 cites·20 claims
- 1797US10217846B1Vertical field effect transistor formation with critical dimension controlGLOBALFOUNDRIES INC·Filed 2018·Granted Feb 26, 2019·21 cites·11 claims
- 1897US9922993B2Transistor with self-aligned source and drain contacts and method of making sameST MICROELECTRONICS INC·Filed 2016·Granted Mar 20, 2018·14 cites·17 claims
- 1997US9882025B1Methods of simultaneously forming bottom and top spacers on a vertical transistor deviceGLOBALFOUNDRIES INC·Filed 2016·Granted Jan 30, 2018·17 cites·15 claims
- 2097US9853163B2Gate all around vacuum channel transistorST MICROELECTRONICS INC·Filed 2016·Granted Dec 26, 2017·14 cites·20 claims
- 2197US9741609B1Middle of line cobalt interconnectionIBM·Filed 2016·Granted Aug 22, 2017·22 cites·14 claims
- 2297US9607893B1Method of forming self-aligned metal lines and viasGLOBALFOUNDRIES INC·Filed 2016·Granted Mar 28, 2017·22 cites·20 claims
- 2396US9761491B1Self-aligned deep contact for vertical FETGLOBALFOUNDRIES INC·Filed 2016·Granted Sep 12, 2017·16 cites·20 claims
- 2495US10431651B1Nanosheet transistor with robust source/drain isolation from substrateIBM·Filed 2018·Granted Oct 1, 2019·12 cites·15 claims
- 2595US9825055B2FinFETs suitable for use in a high density SRAM cellST MICROELECTRONICS INC·Filed 2015·Granted Nov 21, 2017·7 cites·22 claims
- 2695US9601630B2Transistors incorporating metal quantum dots into doped source and drain regionsST MICROELECTRONICS INC·Filed 2013·Granted Mar 21, 2017·9 cites·20 claims
- 2795US9209305B1Backside source-drain contact for integrated circuit transistor devices and method of making sameST MICROELECTRONICS INC·Filed 2014·Granted Dec 8, 2015·21 cites·33 claims
- 2894US10128327B2DRAM interconnect structure having ferroelectric capacitors exhibiting negative capacitanceST MICROELECTRONICS INC·Filed 2014·Granted Nov 13, 2018·12 cites·23 claims
- 2994US9997463B2Modular interconnects for gate-all-around transistorsST MICROELECTRONICS INC·Filed 2016·Granted Jun 12, 2018·9 cites·32 claims
- 3094US9916982B1Dielectric preservation in a replacement gate processGLOBALFOUNDRIES INC·Filed 2016·Granted Mar 13, 2018·10 cites·14 claims
- 3194US9911652B1Forming self-aligned vias and air-gaps in semiconductor fabricationIBM·Filed 2017·Granted Mar 6, 2018·7 cites·20 claims
- 3294US9865681B1Nanowire transistors having multiple threshold voltagesGLOBALFOUNDRIES INC·Filed 2017·Granted Jan 9, 2018·12 cites·20 claims
- 3394US9425213B1Stacked short and long channel FinFETsST MICROELECTRONICS INC·Filed 2015·Granted Aug 23, 2016·7 cites·19 claims
- 3494US9305997B1Method for making semiconductor device with stacked analog components in back end of line (BEOL) regionsST MICROELECTRONICS INC·Filed 2014·Granted Apr 5, 2016·10 cites·22 claims
- 3594US9305974B1High density resistive random access memory (RRAM)ST MICROELECTRONICS INC·Filed 2015·Granted Apr 5, 2016·8 cites·26 claims
- 3693US10199505B2Transistors incorporating metal quantum dots into doped source and drain regionsST MICROELECTRONICS INC·Filed 2017·Granted Feb 5, 2019·6 cites·20 claims
- 3793US9799776B2Semi-floating gate FETST MICROELECTRONICS INC·Filed 2015·Granted Oct 24, 2017·7 cites·19 claims
- 3893US9337087B1Multilayer structure in an integrated circuit for damage prevention and detection and methods of creating the sameST MICROELECTRONICS INC·Filed 2014·Granted May 10, 2016·13 cites·16 claims
- 3993US9111801B2Integrated circuit devices and fabrication techniquesST MICROELECTRONICS INC·Filed 2013·Granted Aug 18, 2015·8 cites·25 claims
- 4093US8859350B2Recessed gate field effect transistorST MICROELECTRONICS INC·Filed 2014·Granted Oct 14, 2014·13 cites·19 claims
- 4193US8829670B1Through silicon via structure for internal chip coolingST MICROELECTRONICS INC·Filed 2013·Granted Sep 9, 2014·17 cites·18 claims
- 4293US8476765B2Copper interconnect structure having a graphene capZHANG JOHN HONGGUANG·Filed 2010·Granted Jul 2, 2013·24 cites·25 claims
- 4392US10680112B2Gate all around vacuum channel transistorST MICROELECTRONICS INC·Filed 2017·Granted Jun 9, 2020·4 cites·20 claims
- 4492US10103245B2Embedded shape sige for strained channel transistorsST MICROELECTRONICS INC·Filed 2017·Granted Oct 16, 2018·6 cites·25 claims
- 4592US9837553B1Vertical field effect transistorGLOBALFOUNDRIES INC·Filed 2016·Granted Dec 5, 2017·8 cites·16 claims
- 4692US9748356B2Threshold adjustment for quantum dot array devices with metal source and drainST MICROELECTRONICS INC·Filed 2013·Granted Aug 29, 2017·8 cites·17 claims
- 4792US9543397B2Backside source-drain contact for integrated circuit transistor devices and method of making sameST MICROELECTRONICS INC·Filed 2015·Granted Jan 10, 2017·8 cites·23 claims
- 4892US9484535B1High density resistive random access memory (RRAM)ST MICROELECTRONICS INC·Filed 2015·Granted Nov 1, 2016·6 cites·16 claims
- 4992US8921976B2Using backside passive elements for multilevel 3D wafers alignment applicationsZHANG JOHN H·Filed 2011·Granted Dec 30, 2014·14 cites·13 claims
- 5092US8680577B2Recessed gate field effect transistorZHANG JOHN H·Filed 2012·Granted Mar 25, 2014·13 cites·9 claims
Showing the top 50 of 249 patent records by PatentIndex Score.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →