Inventor · disambiguated record
Roberto Bez
Also filed as: BEZ ROBERTO
40 granted patents·6 pending applications·1,039 citations·filing 1996–2017
98Inventor score
Top patents by PatentIndex Score
46 records- 0197US6972430B2Sublithographic contact structure, phase change memory cell with optimized heater shape, and manufacturing method thereofOVONYX INC·Filed 2003·Granted Dec 6, 2005·158 cites·16 claims
- 0296US7422926B2Self-aligned process for manufacturing phase change memory cellsST MICROELECTRONICS SRL·Filed 2006·Granted Sep 9, 2008·65 cites·18 claims
- 0396US7110289B1Method and system for controlling MRAM write current to reduce power consumptionST MICROELECTRONICS SRL·Filed 2004·Granted Sep 19, 2006·154 cites·8 claims
- 0496US7012832B1Magnetic memory cell with plural read transistorsST MICROELECTRONICS SRL·Filed 2003·Granted Mar 14, 2006·160 cites·30 claims
- 0595US8546231B2Memory arrays and methods of forming memory cellsPELLIZZER FABIO·Filed 2011·Granted Oct 1, 2013·21 cites·31 claims
- 0693US8975148B2Memory arrays and methods of forming memory cellsMICRON TECHNOLOGY INC·Filed 2013·Granted Mar 10, 2015·8 cites·20 claims
- 0791US6891747B2Phase change memory cell and manufacturing method thereof using minitrenchesOVONYX INC·Filed 2003·Granted May 10, 2005·52 cites·20 claims
- 0890US7259040B2Process for manufacturing a phase change memory array in Cu-damascene technology and phase change memory array manufactured therebyST MICROELECTRONICS SRL·Filed 2004·Granted Aug 21, 2007·40 cites·29 claims
- 0989US6567296B1Memory deviceST MICROELECTRONICS SRL·Filed 2001·Granted May 20, 2003·54 cites·20 claims
- 1086US7227171B2Small area contact region, high efficiency phase change memory cell and fabrication method thereofOVONYX INC·Filed 2002·Granted Jun 5, 2007·43 cites·43 claims
- 1185US9779805B2Phase change memory deviceMICRON TECHNOLOGY INC·Filed 2015·Granted Oct 3, 2017·5 cites·20 claims
- 1285US9064565B2Phase change memory deviceMICRON TECHNOLOGY INC·Filed 2013·Granted Jun 23, 2015·6 cites·20 claims
- 1385US8553453B2Phase change memory devicePELLIZZER FABIO·Filed 2007·Granted Oct 8, 2013·11 cites·19 claims
- 1485US6734490B2Nonvolatile memory cell with high programming efficiencyST MICROELECTRONICS SRL·Filed 2001·Granted May 11, 2004·54 cites·6 claims
- 1584US10482954B2Phase change memory deviceMICRON TECHNOLOGY INC·Filed 2017·Granted Nov 19, 2019·4 cites·20 claims
- 1683US5990526AMemory device with a cell array in triple well, and related manufacturing processST MICROELECTRONICS SRL·Filed 1998·Granted Nov 23, 1999·51 cites·10 claims
- 1779US7993957B2Phase change memory cell and manufacturing method thereof using minitrenchesMICRON TECHNOLOGY INC·Filed 2005·Granted Aug 9, 2011·8 cites·14 claims
- 1875US7446011B2Array of cells including a selection bipolar transistor and fabrication method thereofPELLIZZER FABIO·Filed 2006·Granted Nov 4, 2008·5 cites·26 claims
- 1974US8410527B2Electrical fuse device based on a phase-change memory element and corresponding programming methodPELLIZZER FABIO·Filed 2011·Granted Apr 2, 2013·3 cites·19 claims
- 2074US7307451B2Field programmable gate array deviceST MICROELECTRONICS SRL·Filed 2004·Granted Dec 11, 2007·16 cites·25 claims
- 2173US8384148B2Method of making a floating gate non-volatile MOS semiconductor memory device with improved capacitive couplingMICRON TECHNOLOGY INC·Filed 2005·Granted Feb 26, 2013·3 cites·11 claims
- 2273US7227765B2Content addressable memory cellOVONYX INC·Filed 2004·Granted Jun 5, 2007·19 cites·23 claims
- 2371US6537879B2Process for manufacturing a non-volatile memory cell with a floating gate region autoaligned to the isolation and with a high coupling coefficientST MICROELECTRONICS SRL·Filed 2001·Granted Mar 25, 2003·12 cites·29 claims
- 2470US5784319AMethod for erasing an electrically programmable and erasable non-volatile memory cellSGS THOMSON MICROELECTRONICS·Filed 1997·Granted Jul 21, 1998·30 cites·23 claims
- 2569US7875513B2Self-aligned bipolar junction transistorsPELLIZZER FABIO·Filed 2006·Granted Jan 25, 2011·3 cites·6 claims
- 2668US7606056B2Process for manufacturing a phase change memory array in Cu-damascene technology and phase change memory array thereby manufacturedST MICROELECTRONICS SRL·Filed 2005·Granted Oct 20, 2009·6 cites·28 claims
- 2764US6222245B1High capacity capacitor and corresponding manufacturing processSGS THOMSON MICROELECTRONICS·Filed 1996·Granted Apr 24, 2001·23 cites·13 claims
- 2861US9136467B2Phase change memory cells and methods of forming phase change memory cellsVAN GERPEN DAMON E·Filed 2012·Granted Sep 15, 2015·1 cites·11 claims
- 2961US7772084B2Process for self-aligned manufacture of integrated electronic devicesBEZ ROBERTO·Filed 2008·Granted Aug 10, 2010·2 cites·16 claims
- 3057US7135756B2Array of cells including a selection bipolar transistor and fabrication method thereofOVONYX INC·Filed 2003·Granted Nov 14, 2006·6 cites·31 claims
- 3152US6750505B2Non-volatile memory cell with floating gate region autoaligned to the isolation and with a high coupling coefficientST MICROELECTRONICS SRL·Filed 2003·Granted Jun 15, 2004·4 cites·9 claims
- 3251US6294431B1Process of manufacture of a non-volatile memory with electric continuity of the common source linesST MICROELECTRONICS SRL·Filed 2000·Granted Sep 25, 2001·4 cites·22 claims
- 3349US2007189053A1Electrical fuse device based on a phase-change memory element and corresponding programming methodST MICROELECTRONICS SRL·Filed 2007·Application pending·0 cites
- 3448US6974734B2Process for manufacturing a memory device, in particular a phase change memory, including a silicidation stepOVONYX INC·Filed 2004·Granted Dec 13, 2005·3 cites·18 claims
- 3548US2015144864A1Memory Arrays and Methods of Forming Memory CellsMICRON TECHNOLOGY INC·Filed 2015·Application pending·0 cites
- 3647US9876166B2Phase change memory cell and manufacturing method thereof using minitrenchesBEZ ROBERTO·Filed 2011·Granted Jan 23, 2018·0 cites·19 claims
- 3747US9773977B2Phase change memory cellsMICRON TECHNOLOGY INC·Filed 2015·Granted Sep 26, 2017·0 cites·2 claims
- 3846US7566610B2Process for manufacturing integrated resistive elements with silicidation protectionGROSSI ALESSANDRO·Filed 2006·Granted Jul 28, 2009·0 cites·28 claims
- 3945US2009014709A1Process for manufacturing an array of cells including selection bipolar junction transistors with projecting conduction regionsST MICROELECTRONICS SRL·Filed 2008·Application pending·0 cites
- 4044US2011084247A1Self-Aligned Bipolar Junction TransistorsPELLIZZER FABIO·Filed 2010·Application pending·0 cites
- 4143US7176553B2Integrated resistive elements with silicidation protectionST MICROELECTRONICS SRL·Filed 2003·Granted Feb 13, 2007·1 cites·18 claims
- 4243US2006202245A1Phase-change memory device and manufacturing process thereofST MICROELECTRONICS SRL·Filed 2006·Application pending·0 cites
- 4342US2005024933A1Process for manufacturing device having selector transistors for storage elements and memory device fabricated therebyST MICROELECTRONICS SRL·Filed 2004·Application pending·0 cites
- 4440US7372166B2Sublithographic contact structure, phase change memory cell with optimized heater shape, and manufacturing method thereofST MICROELECTRONICS SRL·Filed 2005·Granted May 13, 2008·0 cites·36 claims
- 4537US7468535B2Self-aligned integrated electronic devicesBEZ ROBERTO·Filed 2003·Granted Dec 23, 2008·0 cites·17 claims
- 4637US6071778AMemory device with a memory cell array in triple well, and related manufacturing processST MICROELECTRONICS SRL·Filed 1999·Granted Jun 6, 2000·4 cites·7 claims
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