Inventor · disambiguated record
Vishnu Khemka
Also filed as: KHEMKA VISHNU · KHEMKA VISHNU K
71 granted patents·3 pending applications·786 citations·filing 2000–2024
99Inventor score
Top patents by PatentIndex Score
74 records- 0196US10103257B1Termination design for trench superjunction power MOSFETNXP USA INC·Filed 2017·Granted Oct 16, 2018·17 cites·12 claims
- 0295US8134222B2MOS capacitor structuresKHAN TAHIR A·Filed 2010·Granted Mar 13, 2012·26 cites·20 claims
- 0393US10811502B1Method of manufacture of super-junction power semiconductor deviceNXP USA INC·Filed 2019·Granted Oct 20, 2020·14 cites·19 claims
- 0492US7466006B2Structure and method for RESURF diodes with a current diverterFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Dec 16, 2008·24 cites·15 claims
- 0592US6882023B2Floating resurf LDMOSFET and method of manufacturing sameMOTOROLA INC·Filed 2002·Granted Apr 19, 2005·70 cites·22 claims
- 0691US7282386B2Schottky device and method of formingFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Oct 16, 2007·22 cites·13 claims
- 0790US8338872B2Electronic device with capcitively coupled floating buried layerKHEMKA VISHNU K·Filed 2010·Granted Dec 25, 2012·17 cites·20 claims
- 0890US8330220B2LDMOS with enhanced safe operating area (SOA) and method thereforKHAN TAHIR A·Filed 2010·Granted Dec 11, 2012·13 cites·11 claims
- 0990US8278710B2Guard ring integrated LDMOSKHEMKA VISHNU K·Filed 2010·Granted Oct 2, 2012·18 cites·20 claims
- 1090US6528849B1Dual-gate resurf superjunction lateral DMOSFETMOTOROLA INC·Filed 2000·Granted Mar 4, 2003·59 cites·19 claims
- 1189US10600911B2Field-effect transistor and method thereforNXP USA INC·Filed 2017·Granted Mar 24, 2020·7 cites·12 claims
- 1289US7851889B2MOSFET device including a source with alternating P-type and N-type regionsFREESCALE SEMICONDUCTOR INC·Filed 2007·Granted Dec 14, 2010·16 cites·20 claims
- 1389US7439584B2Structure and method for RESURF LDMOSFET with a current diverterFREESCALE SEMICONDUCTOR INC·Filed 2006·Granted Oct 21, 2008·18 cites·15 claims
- 1488US8969958B1Integrated MOS power transistor with body extension region for poly field plate depletion assistKHEMKA VISHNU·Filed 2012·Granted Mar 3, 2015·12 cites·9 claims
- 1587US8946851B1Integrated MOS power transistor with thin gate oxide and low gate chargeMCGREGOR JOEL MONTGOMERY·Filed 2012·Granted Feb 3, 2015·11 cites·18 claims
- 1687US6693339B1Semiconductor component and method of manufacturing sameMOTOROLA INC·Filed 2003·Granted Feb 17, 2004·43 cites·28 claims
- 1786US10431678B2Termination design for trench superjunction power MOSFETNXP USA INC·Filed 2018·Granted Oct 1, 2019·4 cites·5 claims
- 1886US8963241B1Integrated MOS power transistor with poly field plate extension for depletion assistKHEMKA VISHNU·Filed 2012·Granted Feb 24, 2015·10 cites·14 claims
- 1986US8623732B2Methods of making laterally double diffused metal oxide semiconductor transistors having a reduced surface field structureGROTE BERNHARD H·Filed 2010·Granted Jan 7, 2014·9 cites·16 claims
- 2086US8193585B2Semiconductor device with increased snapback voltageGROTE BERNHARD H·Filed 2009·Granted Jun 5, 2012·15 cites·20 claims
- 2185US6573562B2Semiconductor component and method of operationMOTOROLA INC·Filed 2001·Granted Jun 3, 2003·42 cites·27 claims
- 2284US8987818B1Integrated MOS power transistor with thin gate oxide and low gate chargeMCGREGOR JOEL MONTGOMERY·Filed 2011·Granted Mar 24, 2015·9 cites·11 claims
- 2384US7777257B2Bipolar Schottky diode and methodFREESCALE SEMICONDUCTOR INC·Filed 2007·Granted Aug 17, 2010·11 cites·20 claims
- 2484US7732274B2High voltage deep trench capacitorFREESCALE SEMICONDUCTOR INC·Filed 2007·Granted Jun 8, 2010·9 cites·15 claims
- 2584US7180158B2Semiconductor device and method of manufactureFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Feb 20, 2007·11 cites·5 claims
- 2684US7095092B2Semiconductor device and method of forming the sameFREESCALE SEMICONDUCTOR INC·Filed 2004·Granted Aug 22, 2006·30 cites·22 claims
- 2782US11329150B2Termination for trench field plate power MOSFETNXP USA INC·Filed 2020·Granted May 10, 2022·1 cites·18 claims
- 2882US7851857B2Dual current path LDMOSFET with graded PBL for ultra high voltage smart power applicationsFREESCALE SEMICONDUCTOR INC·Filed 2008·Granted Dec 14, 2010·10 cites·20 claims
- 2982US7791161B2Semiconductor devices employing poly-filled trenchesFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Sep 7, 2010·11 cites·15 claims
- 3082US7723204B2Semiconductor device with a multi-plate isolation structureFREESCALE SEMICONDUCTOR INC·Filed 2006·Granted May 25, 2010·11 cites·12 claims
- 3182US7511319B2Methods and apparatus for a stepped-drift MOSFETFREESCALE SEMICONDUCTOR INC·Filed 2006·Granted Mar 31, 2009·9 cites·16 claims
- 3281US7608908B1Robust deep trench isolationFREESCALE SEMICONDUCTOR INC·Filed 2008·Granted Oct 27, 2009·12 cites·20 claims
- 3380US7405128B1Dotted channel MOSFET and methodFREESCALE SEMICONDUCTOR INC·Filed 2007·Granted Jul 29, 2008·8 cites·7 claims
- 3479US7141860B2LDMOS transistorFREESCALE SEMICONDUCTOR INC·Filed 2004·Granted Nov 28, 2006·24 cites·10 claims
- 3578US10153357B1Superjunction power semiconductor device and method for formingNXP USA INC·Filed 2017·Granted Dec 11, 2018·3 cites·19 claims
- 3678US8188543B2Electronic device including a conductive structure extending through a buried insulating layerROGGENBAUER TODD C·Filed 2006·Granted May 29, 2012·12 cites·11 claims
- 3777US7550804B2Semiconductor device and method for forming the sameFREESCALE SEMICONDUCTOR INC·Filed 2006·Granted Jun 23, 2009·7 cites·19 claims
- 3876US8384184B2Laterally diffused metal oxide semiconductor deviceFREESCALE SEMICONDUCTOR INC·Filed 2010·Granted Feb 26, 2013·3 cites·15 claims
- 3976US6734524B1Electronic component and method of manufacturing sameMOTOROLA INC·Filed 2002·Granted May 11, 2004·21 cites·33 claims
- 4074US8816434B2Laterally double diffused metal oxide semiconductor transistors having a reduced surface field structuresFREESCALE SEMICONDUCTOR INC·Filed 2013·Granted Aug 26, 2014·3 cites·16 claims
- 4173US6750524B2Trench MOS RESURF super-junction devicesMOTOROLA FREESCALE SEMICONDUCT·Filed 2002·Granted Jun 15, 2004·23 cites·16 claims
- 4271US8344472B2Semiconductor device and methodFREESCALE SEMICONDUCTOR INC·Filed 2010·Granted Jan 1, 2013·3 cites·20 claims
- 4371US7309638B2Method of manufacturing a semiconductor componentFREESCALE SEMICONDUCTOR INC·Filed 2005·Granted Dec 18, 2007·4 cites·10 claims
- 4470US7436025B2Termination structures for super junction devicesFREESCALE SEMICONDUCTOR INC·Filed 2006·Granted Oct 14, 2008·4 cites·20 claims
- 4569US9196681B1Metal oxide semiconductor field effect transistor with reduced surface field foldingMAXIM INTEGRATED PRODUCTS·Filed 2014·Granted Nov 24, 2015·2 cites·20 claims
- 4669US7820519B2Process of forming an electronic device including a conductive structure extending through a buried insulating layerFREESCALE SEMICONDUCTOR INC·Filed 2006·Granted Oct 26, 2010·5 cites·18 claims
- 4769US6930027B2Method of manufacturing a semiconductor componentFREESCALE SEMICONDUCTOR INC·Filed 2003·Granted Aug 16, 2005·17 cites·27 claims
- 4867US11631763B2Termination for trench field plate power MOSFETNXP USA INC·Filed 2022·Granted Apr 18, 2023·0 cites·18 claims
- 4967US8907419B2LDMOS with enhanced safe operating area (SOA) and method thereforKHAN TAHIR A·Filed 2012·Granted Dec 9, 2014·2 cites·6 claims
- 5066US10644146B1Vertical bi-directional switches and method for making sameNXP USA INC·Filed 2018·Granted May 5, 2020·1 cites·20 claims
Showing the top 50 of 74 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →