Inventor · disambiguated record
Lance Scudder
Also filed as: SCUDDER LANCE · SCUDDER LANCE S
18 granted patents·3 pending applications·112 citations·filing 2010–2018
93Inventor score
Top patents by PatentIndex Score
21 records- 0194US8569156B1Reducing or eliminating pre-amorphization in transistor manufactureSCUDDER LANCE·Filed 2012·Granted Oct 29, 2013·25 cites·18 claims
- 0293US9112057B1Semiconductor devices with dopant migration suppression and method of fabrication thereofMIE FUJITSU SEMICONDUCTOR LTD·Filed 2012·Granted Aug 18, 2015·17 cites·19 claims
- 0393US8796048B1Monitoring and measurement of thin film layersTHOMPSON SCOTT E·Filed 2012·Granted Aug 5, 2014·16 cites·19 claims
- 0491US8614128B1CMOS structures and processes based on selective thinningTHOMPSON SCOTT E·Filed 2012·Granted Dec 24, 2013·10 cites·18 claims
- 0589US9299698B2Semiconductor structure with multiple transistors having various threshold voltagesMIE FUJITSU SEMICONDUCTOR LTD·Filed 2013·Granted Mar 29, 2016·7 cites·9 claims
- 0688US8877619B1Process for manufacture of integrated circuits with different channel doping transistor architectures and devices therefromSUVOLTA INC·Filed 2013·Granted Nov 4, 2014·12 cites·5 claims
- 0783US8937005B2Reducing or eliminating pre-amorphization in transistor manufactureSUVOLTA INC·Filed 2013·Granted Jan 20, 2015·4 cites·20 claims
- 0881US9041126B2Deeply depleted MOS transistors having a screening layer and methods thereofSUVOLTA INC·Filed 2013·Granted May 26, 2015·6 cites·19 claims
- 0979US8999861B1Semiconductor structure with substitutional boron and method for fabrication thereofSCUDDER LANCE·Filed 2012·Granted Apr 7, 2015·5 cites·6 claims
- 1076US8778786B1Method for substrate preservation during transistor fabricationSCUDDER LANCE·Filed 2012·Granted Jul 15, 2014·4 cites·19 claims
- 1176US8637955B1Semiconductor structure with reduced junction leakage and method of fabrication thereofWANG LINGQUAN·Filed 2012·Granted Jan 28, 2014·5 cites·20 claims
- 1267US9391076B1CMOS structures and processes based on selective thinningMIE FUJITSU SEMICONDUCTOR LTD·Filed 2014·Granted Jul 12, 2016·1 cites·7 claims
- 1362US10217838B2Semiconductor structure with multiple transistors having various threshold voltagesMIE FUJITSU SEMICONDUCTOR LTD·Filed 2018·Granted Feb 26, 2019·0 cites·9 claims
- 1459US9812550B2Semiconductor structure with multiple transistors having various threshold voltagesMIE FUJITSU SEMICONDUCTOR LTD·Filed 2017·Granted Nov 7, 2017·0 cites·1 claims
- 1558US9793172B2Reducing or eliminating pre-amorphization in transistor manufactureMIE FUJITSU SEMICONDUCTOR LTD·Filed 2016·Granted Oct 17, 2017·0 cites·6 claims
- 1657US10014387B2Semiconductor structure with multiple transistors having various threshold voltagesMIE FUJITSU SEMICONDUCTOR LTD·Filed 2016·Granted Jul 3, 2018·0 cites·10 claims
- 1754US9514940B2Reducing or eliminating pre-amorphization in transistor manufactureMIE FUJITSU SEMICONDUCTOR LTD·Filed 2015·Granted Dec 6, 2016·0 cites·17 claims
- 1854US9105711B2Semiconductor structure with reduced junction leakage and method of fabrication thereofMIE FUJITSU SEMICONDUCTOR LTD·Filed 2013·Granted Aug 11, 2015·0 cites·18 claims
- 1951US2016307907A1CMOS Structures and Processes Based on Selective ThinningMIE FUJITSU SEMICONDUCTOR LTD·Filed 2016·Application pending·0 cites
- 2047US2015340460A1Advanced transistors with threshold voltage set dopant structuresMIE FUJITSU SEMICONDUCTOR LTD·Filed 2015·Application pending·0 cites
- 2146US2011079861A1Advanced Transistors with Threshold Voltage Set Dopant StructuresSHIFREN LUCIAN·Filed 2010·Application pending·0 cites
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