Inventor · disambiguated record
Andre Rainer Stegner
Also filed as: STEGNER ANDRE · STEGNER ANDRE RAINER · STEGNER ANDRÉ RAINER
20 granted patents·2 pending applications·29 citations·filing 2012–2024
90Inventor score
Top patents by PatentIndex Score
22 records- 0189US9685504B2Semiconductor to metal transition for semiconductor devicesINFINEON TECHNOLOGIES AG·Filed 2016·Granted Jun 20, 2017·6 cites·17 claims
- 0288US8853774B2Semiconductor device including trenches and method of manufacturing a semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2012·Granted Oct 7, 2014·14 cites·25 claims
- 0387US9443971B2Semiconductor to metal transitionINFINEON TECHNOLOGIES AG·Filed 2015·Granted Sep 13, 2016·5 cites·20 claims
- 0481US11063142B2Semiconductor device including silicon carbide body and method of manufacturingINFINEON TECHNOLOGIES AG·Filed 2019·Granted Jul 13, 2021·2 cites·20 claims
- 0575US11094779B2Semiconductor device having an edge termination region comprising a first edge termination region of a second conductivity type adjacent to a second edge termination region of a first conductivity typeINFINEON TECHNOLOGIES AG·Filed 2017·Granted Aug 17, 2021·2 cites·1 claims
- 0674US12107141B2Semiconductor device having a silicon carbide drift zone over a silicon carbide field stop zoneINFINEON TECHNOLOGIES AG·Filed 2022·Granted Oct 1, 2024·0 cites·21 claims
- 0767US11302795B2Method of manufacturing a semiconductor device and semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2020·Granted Apr 12, 2022·0 cites·14 claims
- 0860US10497801B2Method of manufacturing a semiconductor device having an undulated profile of net doping in a drift zoneINFINEON TECHNOLOGIES AG·Filed 2019·Granted Dec 3, 2019·0 cites·20 claims
- 0960US10475911B2Semiconductor device having a source region with chalcogen atomsINFINEON TECHNOLOGIES AG·Filed 2019·Granted Nov 12, 2019·0 cites·20 claims
- 1058US2025079275A1Package with transistor chip between carrier and conductive structure and with thermally conductive electrically insulating layerINFINEON TECHNOLOGIES AG·Filed 2024·Application pending·0 cites
- 1157US2023299147A1Method for producing a sic superjunction deviceINFINEON·Filed 2023·Application pending·0 cites
- 1255US10211325B2Semiconductor device including undulated profile of net doping in a drift zoneINFINEON TECHNOLOGIES AG·Filed 2014·Granted Feb 19, 2019·0 cites·14 claims
- 1353US11264464B2Silicon carbide devices and methods for forming silicon carbide devicesINFINEON TECHNOLOGIES AG·Filed 2019·Granted Mar 1, 2022·0 cites·23 claims
- 1453US10665687B2Method for processing a semiconductor device and semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2017·Granted May 26, 2020·0 cites·19 claims
- 1552US10205011B2Method for forming a semiconductor device with implanted chalcogen atomsINFINEON TECHNOLOGIES AG·Filed 2016·Granted Feb 12, 2019·0 cites·13 claims
- 1652US9653296B2Method for processing a semiconductor device and semiconductor deviceINFINEON TECHNOLOGIES AG·Filed 2014·Granted May 16, 2017·0 cites·23 claims
- 1748US11282926B2Semiconductor device with a semiconductor body of silicon carbideINFINEON TECHNOLOGIES AG·Filed 2020·Granted Mar 22, 2022·0 cites·22 claims
- 1845US10943979B2Semiconductor device having a semiconductor body composed of silicon carbideINFINEON TECHNOLOGIES AG·Filed 2019·Granted Mar 9, 2021·0 cites·17 claims
- 1942US9647100B2Semiconductor device with auxiliary structure including deep level dopantsINFINEON TECHNOLOGIES AG·Filed 2015·Granted May 9, 2017·0 cites·25 claims
- 2041US10424636B2Power semiconductor devices, semiconductor devices and a method for adjusting a number of charge carriersINFINEON TECHNOLOGIES AG·Filed 2016·Granted Sep 24, 2019·0 cites·18 claims
- 2140US9293524B2Semiconductor device with a field ring edge termination structure and a separation trench arranged between different field ringsINFINEON TECHNOLOGIES AG·Filed 2014·Granted Mar 22, 2016·0 cites·24 claims
- 2235US9954068B2Method of forming a transistor, method of patterning a substrate, and transistorINFINEON TECHNOLOGIES AG·Filed 2015·Granted Apr 24, 2018·0 cites·18 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →