Inventor · disambiguated record
Amitabh Jain
Also filed as: JAIN AMITABH · JAIN AMITABH KUMAR
72 granted patents·16 pending applications·580 citations·filing 2001–2025
99Inventor score
Files withTEXAS INSTRUMENTS INC53ICERTIS INC8JAIN AMITABH6NANDAKUMAR MAHALINGAM3HINDUSTAN PETROLEUM CORP LTD2
Top patents by PatentIndex Score
88 records- 0196US10726374B1Risk prediction based on automated analysis of documentsICERTIS INC·Filed 2019·Granted Jul 28, 2020·57 cites·28 claims
- 0295US10162850B1Clause discovery for validation of documentsICERTIS INC·Filed 2018·Granted Dec 25, 2018·36 cites·26 claims
- 0395US7211516B2Nickel silicide including indium and a method of manufacture thereforTEXAS INSTRUMENTS INC·Filed 2005·Granted May 1, 2007·34 cites·16 claims
- 0493US7511350B2Nickel alloy silicide including indium and a method of manufacture thereforTEXAS INSTRUMENTS INC·Filed 2008·Granted Mar 31, 2009·20 cites·5 claims
- 0593US7344985B2Nickel alloy silicide including indium and a method of manufacture thereforTEXAS INSTRUMENTS INC·Filed 2006·Granted Mar 18, 2008·21 cites·14 claims
- 0692US7355255B2Nickel silicide including indium and a method of manufacture thereforTEXAS INSTRUMENTS INC·Filed 2007·Granted Apr 8, 2008·17 cites·6 claims
- 0790US7344929B2Method for manufacturing an integrated circuit using a capping layer having a degree of reflectivityTEXAS INSTRUMENTS INC·Filed 2005·Granted Mar 18, 2008·16 cites·24 claims
- 0889US8927385B2ZTCR poly resistor in replacement gate flowTEXAS INSTRUMENTS INC·Filed 2012·Granted Jan 6, 2015·11 cites·10 claims
- 0989US8558310B2Indium, carbon and halogen doping for PMOS transistorsNANDAKUMAR MAHALINGAM·Filed 2010·Granted Oct 15, 2013·9 cites·9 claims
- 1089US7678637B2CMOS fabrication processTEXAS INSTRUMENTS INC·Filed 2008·Granted Mar 16, 2010·13 cites·16 claims
- 1187US10409805B1Clause discovery for validation of documentsICERTIS INC·Filed 2018·Granted Sep 10, 2019·7 cites·17 claims
- 1287US7557022B2Implantation of carbon and/or fluorine in NMOS fabricationTEXAS INSTRUMENTS INC·Filed 2006·Granted Jul 7, 2009·13 cites·18 claims
- 1386US6677201B1Method of fabricating thermal CVD oxynitride and BTBAS nitride sidewall spacer for metal oxide semiconductor transistorsTEXAS INSTRUMENTS INC·Filed 2002·Granted Jan 13, 2004·34 cites·7 claims
- 1485US7247535B2Source/drain extensions having highly activated and extremely abrupt junctionsTEXAS INSTRUMENTS INC·Filed 2004·Granted Jul 24, 2007·27 cites·21 claims
- 1585US6797593B2Methods and apparatus for improved mosfet drain extension activationTEXAS INSTRUMENTS INC·Filed 2002·Granted Sep 28, 2004·33 cites·27 claims
- 1684US10936974B2Automated training and selection of models for document analysisICERTIS INC·Filed 2018·Granted Mar 2, 2021·8 cites·30 claims
- 1784US8877581B2Strain-engineered MOSFETs having rimmed source-drain recessesJAIN AMITABH·Filed 2010·Granted Nov 4, 2014·8 cites·20 claims
- 1883US8987748B2Drain induced barrier lowering with anti-punch-through implantTEXAS INSTRUMENTS INC·Filed 2012·Granted Mar 24, 2015·6 cites·20 claims
- 1982US8125035B2CMOS fabrication processNANDAKUMAR MAHALINGAM·Filed 2010·Granted Feb 28, 2012·5 cites·3 claims
- 2082US7932139B2Methodology of improving the manufacturability of laser annealTEXAS INSTRUMENTS INC·Filed 2007·Granted Apr 26, 2011·6 cites·22 claims
- 2181US6812073B2Source drain and extension dopant concentrationTEXAS INSTRUMENTS INC·Filed 2002·Granted Nov 2, 2004·26 cites·12 claims
- 2279US7163878B2Ultra-shallow arsenic junction formation in silicon germaniumTEXAS INSTRUMENTS INC·Filed 2005·Granted Jan 16, 2007·6 cites·18 claims
- 2378US7691714B2Semiconductor device having a dislocation loop located within a boundary created by source/drain regions and a method of manufacture thereforTEXAS INSTRUMENTS INC·Filed 2005·Granted Apr 6, 2010·6 cites·14 claims
- 2478US6808997B2Complementary junction-narrowing implants for ultra-shallow junctionsTEXAS INSTRUMENTS INC·Filed 2003·Granted Oct 26, 2004·17 cites·10 claims
- 2577US6713360B2System for reducing segregation and diffusion of halo implants into highly doped regionsTEXAS INSTRUMENTS INC·Filed 2002·Granted Mar 30, 2004·19 cites·2 claims
- 2676US8659112B2Carbon and nitrogen doping for selected PMOS transistor on an integrated circuitNANDAKUMAR MAHALINGAM·Filed 2010·Granted Feb 25, 2014·3 cites·19 claims
- 2776US7118980B2Solid phase epitaxy recrystallization by laser annealingTEXAS INSTRUMENTS INC·Filed 2004·Granted Oct 10, 2006·17 cites·28 claims
- 2875US8865549B2Recessed channel insulated-gate field effect transistor with self-aligned gate and increased channel lengthTEXAS INSTRUMENTS INC·Filed 2012·Granted Oct 21, 2014·3 cites·6 claims
- 2974US7666748B2Method of forming amorphous source/drain extensionsTEXAS INSTRUMENTS INC·Filed 2006·Granted Feb 23, 2010·4 cites·2 claims
- 3074US7371648B2Method for manufacturing a transistor device having an improved breakdown voltage and a method for manufacturing an integrated circuit using the sameTEXAS INSTRUMENTS INC·Filed 2006·Granted May 13, 2008·4 cites·16 claims
- 3173US8853042B2Carbon and nitrogen doping for selected PMOS transistors on an integrated circuitTEXAS INSTRUMENTS INC·Filed 2014·Granted Oct 7, 2014·2 cites·3 claims
- 3273US7902032B2Method for forming strained channel PMOS devices and integrated circuits therefromTEXAS INSTRUMENTS INC·Filed 2008·Granted Mar 8, 2011·3 cites·13 claims
- 3371US7615458B2Activation of CMOS source/drain extensions by ultra-high temperature annealsTEXAS INSTRUMENTS INC·Filed 2007·Granted Nov 10, 2009·3 cites·17 claims
- 3470US8691644B2Method of forming a CMOS device with a stressed-channel NMOS transistor and a strained-channel PMOS transistorSONG SEUNG-CHUL·Filed 2012·Granted Apr 8, 2014·3 cites·20 claims
- 3570US6847089B2Gate edge diode leakage reductionTEXAS INSTRUMENTS INC·Filed 2003·Granted Jan 25, 2005·12 cites·4 claims
- 3669US9960086B2Methods, apparatus and system for self-aligned retrograde well doping for finFET devicesGLOBALFOUNDRIES INC·Filed 2016·Granted May 1, 2018·1 cites·15 claims
- 3767US7173296B2Reduced hydrogen sidewall spacer oxideTEXAS INSTRUMENTS INC·Filed 2004·Granted Feb 6, 2007·9 cites·3 claims
- 3866US7795122B2Antimony ion implantation for semiconductor componentsTEXAS INSTRUMENTS INC·Filed 2007·Granted Sep 14, 2010·2 cites·23 claims
- 3965US6482688B2Utilizing amorphorization of polycrystalline structures to achieve T-shaped MOSFET gateTEXAS INSTRUMENTS INC·Filed 2001·Granted Nov 19, 2002·14 cites·28 claims
- 4064US11593440B1Representing documents using document keysICERTIS INC·Filed 2022·Granted Feb 28, 2023·0 cites·20 claims
- 4164US8772118B2Offset screen for shallow source/drain extension implants, and processes and integrated circuitsJAIN AMITABH·Filed 2012·Granted Jul 8, 2014·1 cites·8 claims
- 4264US7026218B2Use of indium to define work function of p-type doped polysiliconTEXAS INSTRUMENTS INC·Filed 2004·Granted Apr 11, 2006·9 cites·16 claims
- 4362US10068802B2Threshold mismatch and IDDQ reduction using split carbon co-implantationTEXAS INSTRUMENTS INC·Filed 2012·Granted Sep 4, 2018·1 cites·20 claims
- 4462US7670917B2Semiconductor device made by using a laser anneal to incorporate stress into a channel regionTEXAS INSTRUMENTS INC·Filed 2007·Granted Mar 2, 2010·1 cites·17 claims
- 4562US7345355B2Complementary junction-narrowing implants for ultra-shallow junctionsTEXAS INSTRUMENTS INC·Filed 2004·Granted Mar 18, 2008·6 cites·4 claims
- 4662US6743705B2Transistor with improved source/drain extension dopant concentrationTEXAS INSTRUMENTS INC·Filed 2002·Granted Jun 1, 2004·10 cites·18 claims
- 4761US11361034B1Representing documents using document keysICERTIS INC·Filed 2021·Granted Jun 14, 2022·0 cites·26 claims
- 4861US8124511B2Method of manufacturing a semiconductor device having reduced N/P or P/N junction crystal disorderJAIN AMITABH·Filed 2007·Granted Feb 28, 2012·1 cites·23 claims
- 4960US11151501B2Risk prediction based on automated analysis of documentsICERTIS INC·Filed 2020·Granted Oct 19, 2021·0 cites·20 claims
- 5059US12020130B2Automated training and selection of models for document analysisICERTIS INC·Filed 2021·Granted Jun 25, 2024·0 cites·14 claims
Showing the top 50 of 88 patent records by PatentIndex Score.
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →