Inventor · disambiguated record
Beth R. Cook
Also filed as: COOK BETH · COOK BETH R
29 granted patents·8 pending applications·85 citations·filing 2012–2024
95Inventor score
Top patents by PatentIndex Score
37 records- 0197US10879344B2Memory cells comprising ferroelectric material and including current leakage paths having different total resistancesMICRON TECHNOLOGY INC·Filed 2020·Granted Dec 29, 2020·4 cites·28 claims
- 0297US10396145B2Memory cells comprising ferroelectric material and including current leakage paths having different total resistancesMICRON TECHNOLOGY INC·Filed 2017·Granted Aug 27, 2019·19 cites·29 claims
- 0397US9231206B2Methods of forming a ferroelectric memory cellMICRON TECHNOLOGY INC·Filed 2013·Granted Jan 5, 2016·21 cites·20 claims
- 0495US10650978B2Methods of incorporating leaker devices into capacitor configurations to reduce cell disturbMICRON TECHNOLOGY INC·Filed 2017·Granted May 12, 2020·7 cites·11 claims
- 0593US11170834B2Memory cells and methods of forming a capacitor including current leakage paths having different total resistancesMICRON TECHNOLOGY INC·Filed 2019·Granted Nov 9, 2021·9 cites·16 claims
- 0690US12336185B2Memory device assembly with non-impinged leaker devicesMICRON TECHNOLOGY INC·Filed 2022·Granted Jun 17, 2025·1 cites·25 claims
- 0790US10403630B2Semiconductor devices including ferroelectric materialsMICRON TECHNOLOGY INC·Filed 2018·Granted Sep 3, 2019·3 cites·20 claims
- 0890US2025098175A1Electronic devices including ferroelectric materials, and related memory devicesMICRON TECHNOLOGY INC·Filed 2024·Application pending·0 cites
- 0989US9306162B2Interfacial cap for electrode contacts in memory cell arraysSONY CORP·Filed 2014·Granted Apr 5, 2016·5 cites·31 claims
- 1087US9698343B2Semiconductor device structures including ferroelectric memory cellsMICRON TECHNOLOGY INC·Filed 2015·Granted Jul 4, 2017·3 cites·16 claims
- 1178US10833092B2Methods of incorporating leaker-devices into capacitor configurations to reduce cell disturb, and capacitor configurations incorporating leaker-devicesMICRON TECHNOLOGY INC·Filed 2019·Granted Nov 10, 2020·1 cites·23 claims
- 1278US10090462B2Resistive memory devicesMICRON TECHNOLOGY INC·Filed 2015·Granted Oct 2, 2018·2 cites·15 claims
- 1378US10062703B2Methods of forming a ferroelectric memory cellMICRON TECHNOLOGY INC·Filed 2017·Granted Aug 28, 2018·1 cites·23 claims
- 1477US12167610B2Semiconductor devices including ferroelectric materialsMICRON TECHNOLOGY INC·Filed 2021·Granted Dec 10, 2024·0 cites·19 claims
- 1577US11711924B2Methods of forming structures containing leaker-devices and memory configurations incorporating leaker-devicesMICRON TECHNOLOGY INC·Filed 2022·Granted Jul 25, 2023·0 cites·20 claims
- 1677US9224945B2Resistive memory devicesRAMASWAMY DURAI VISHAK NIRMAL·Filed 2012·Granted Dec 29, 2015·3 cites·13 claims
- 1773US9431606B1Memory cellsMICRON TECHNOLOGY INC·Filed 2015·Granted Aug 30, 2016·2 cites·6 claims
- 1872US11600691B2Memory cells comprising ferroelectric material and including current leakage paths having different total resistancesMICRON TECHNOLOGY INC·Filed 2020·Granted Mar 7, 2023·0 cites·13 claims
- 1972US11315939B2Methods of incorporating leaker-devices into capacitor configurations to reduce cell disturb, and capacitor configurations incorporating leaker-devicesMICRON TECHNOLOGY INC·Filed 2020·Granted Apr 26, 2022·0 cites·20 claims
- 2072US8633084B1Methods of forming a memory cell having programmable material that comprises a multivalent metal oxide portion and an oxygen containing dielectric portionMICRON TECHNOLOGY INC·Filed 2012·Granted Jan 21, 2014·2 cites·35 claims
- 2171US11676768B2Methods of incorporating leaker devices into capacitor configurations to reduce cell disturb, and capacitor configurations incorporating leaker devicesMICRON TECHNOLOGY INC·Filed 2022·Granted Jun 13, 2023·0 cites·18 claims
- 2270US11043502B2Semiconductor devices including ferroelectric materialsMICRON TECHNOLOGY INC·Filed 2019·Granted Jun 22, 2021·0 cites·18 claims
- 2370US10903218B2Methods of incorporating leaker-devices into capacitor configurations to reduce cell disturb, and capacitor configurations incorporating leaker-devicesMICRON TECHNOLOGY INC·Filed 2020·Granted Jan 26, 2021·0 cites·22 claims
- 2470US9691976B2Interfacial cap for electrode contacts in memory cell arraysSONY SEMICONDUCTOR SOLUTIONS CORP·Filed 2016·Granted Jun 27, 2017·1 cites·32 claims
- 2566US11404217B2Methods of incorporating leaker devices into capacitor configurations to reduce cell disturb, and capacitor configurations incorporating leaker devicesMICRON TECHNOLOGY INC·Filed 2020·Granted Aug 2, 2022·0 cites·20 claims
- 2664US10680057B2Methods of forming a capacitor comprising ferroelectric material and including current leakage paths having different total resistancesMICRON TECHNOLOGY INC·Filed 2019·Granted Jun 9, 2020·0 cites·14 claims
- 2764US8797784B2Filamentary memory devices and methodsBI LEI·Filed 2012·Granted Aug 5, 2014·1 cites·25 claims
- 2863US2025063737A1Electronic devices including capacitors, and related methodsMICRON TECHNOLOGY INC·Filed 2024·Application pending·0 cites
- 2962US11935574B2Memory cells and methods of forming a capacitor including current leakage paths having different total resistancesMICRON TECHNOLOGY INC·Filed 2021·Granted Mar 19, 2024·0 cites·13 claims
- 3060US8809157B2Methods of forming a programmable region that comprises a multivalent metal oxide portion and an oxygen containing dielectric portionMICRON TECHNOLOGY INC·Filed 2013·Granted Aug 19, 2014·0 cites·31 claims
- 3157US2020227423A1Ferroelectric Devices and Methods of Forming Ferroelectric DevicesMICRON TECHNOLOGY INC·Filed 2020·Application pending·0 cites
- 3256US9324943B2Filamentary memory devices and methodsMICRON TECHNOLOGY INC·Filed 2014·Granted Apr 26, 2016·0 cites·20 claims
- 3354US2017271587A1Capped electrode contact for rram cells and memory cell arraysSONY CORP·Filed 2017·Application pending·0 cites
- 3451US2024045604A1Self-aligned techniques for forming connections in a memory deviceMICRON TECHNOLOGY INC·Filed 2022·Application pending·0 cites
- 3549US2017345831A1Ferroelectric Devices and Methods of Forming Ferroelectric DevicesMICRON TECHNOLOGY INC·Filed 2016·Application pending·0 cites
- 3641US2014306172A1Integrated circuit system with non-volatile memory and method of manufacture thereofSONY CORP·Filed 2013·Application pending·0 cites
- 3739US2016104840A1Resistive memory with a thermally insulating regionCOOK BETH·Filed 2014·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →