Inventor · disambiguated record
Mark Visokay
Also filed as: VISOKAY MARK · VISOKAY MARK R · VISOKAY MARK ROBERT
111 granted patents·37 pending applications·3,962 citations·filing 1992–2023
99Inventor score
Top patents by PatentIndex Score
148 records- 0199US6544906B2Annealing of high-k dielectric materialsTEXAS INSTRUMENTS INC·Filed 2001·Granted Apr 8, 2003·602 cites·24 claims
- 0298US6936508B2Metal gate MOS transistors and methods for making the sameTEXAS INSTRUMENTS INC·Filed 2003·Granted Aug 30, 2005·173 cites·30 claims
- 0398US6211035B1Integrated circuit and methodTEXAS INSTRUMENTS INC·Filed 1999·Granted Apr 3, 2001·370 cites·4 claims
- 0497US7229873B2Process for manufacturing dual work function metal gates in a microelectronics deviceTEXAS INSTRUMENTS INC·Filed 2005·Granted Jun 12, 2007·71 cites·23 claims
- 0597US6852645B2High temperature interface layer growth for high-k gate dielectricTEXAS INSTRUMENTS INC·Filed 2003·Granted Feb 8, 2005·130 cites·28 claims
- 0697US6835639B2Multiple work function gatesTEXAS INSTRUMENTS INC·Filed 2002·Granted Dec 28, 2004·130 cites·5 claims
- 0797US6696332B2Bilayer deposition to avoid unwanted interfacial reactions during high K gate dielectric processingTEXAS INSTRUMENTS INC·Filed 2002·Granted Feb 24, 2004·145 cites·12 claims
- 0897US6596583B2Methods for forming and integrated circuit structures containing ruthenium and tungsten containing layersMICRON TECHNOLOGY INC·Filed 2001·Granted Jul 22, 2003·96 cites·9 claims
- 0996US6518610B2Rhodium-rich oxygen barriersMICRON TECHNOLOGY INC·Filed 2001·Granted Feb 11, 2003·104 cites·23 claims
- 1095US7018902B2Gate dielectric and methodTEXAS INSTRUMENTS INC·Filed 2002·Granted Mar 28, 2006·78 cites·8 claims
- 1195US6821873B2Anneal sequence for high-κ film property optimizationTEXAS INSTRUMENTS INC·Filed 2002·Granted Nov 23, 2004·106 cites·22 claims
- 1295US6750126B1Methods for sputter deposition of high-k dielectric filmsTEXAS INSTRUMENTS INC·Filed 2003·Granted Jun 15, 2004·83 cites·52 claims
- 1394US7226830B2Semiconductor CMOS devices and methods with NMOS high-k dielectric formed prior to core PMOS dielectric formationTEXAS INSTRUMENTS INC·Filed 2005·Granted Jun 5, 2007·33 cites·24 claims
- 1494US7135361B2Method for fabricating transistor gate structures and gate dielectrics thereofTEXAS INSTRUMENTS INC·Filed 2003·Granted Nov 14, 2006·62 cites·40 claims
- 1594US7045456B2MOS transistor gates with thin lower metal silicide and methods for making the sameTEXAS INSTRUMENTS INC·Filed 2003·Granted May 16, 2006·124 cites·14 claims
- 1694US6770521B2Method of making multiple work function gates by implanting metals with metallic alloying additivesTEXAS INSTRUMENTS INC·Filed 2002·Granted Aug 3, 2004·63 cites·14 claims
- 1794US6380080B2Methods for preparing ruthenium metal filmsMICRON TECHNOLOGY INC·Filed 2000·Granted Apr 30, 2002·67 cites·19 claims
- 1893US7176076B2Semiconductor CMOS devices and methods with NMOS high-k dielectric present in core region that mitigate damage to dielectric materialsTEXAS INSTRUMENTS INC·Filed 2005·Granted Feb 13, 2007·40 cites·11 claims
- 1993US6511896B2Method of etching a substantially amorphous TA2O5 comprising layerMICRON TECHNOLOGY INC·Filed 2001·Granted Jan 28, 2003·48 cites·13 claims
- 2093US6492241B1Integrated capacitors fabricated with conductive metal oxidesMICRON TECHNOLOGY INC·Filed 2000·Granted Dec 10, 2002·64 cites·32 claims
- 2193US6444542B2Integrated circuit and methodTEXAS INSTRUMENTS INC·Filed 2001·Granted Sep 3, 2002·51 cites·2 claims
- 2292US7351632B2Semiconductor CMOS devices and methods with NMOS high-k dielectric formed prior to core PMOS silicon oxynitride dielectric formation using direct nitridation of siliconTEXAS INSTRUMENTS INC·Filed 2005·Granted Apr 1, 2008·24 cites·24 claims
- 2392US7105891B2Gate structure and methodTEXAS INSTRUMENTS INC·Filed 2002·Granted Sep 12, 2006·69 cites·3 claims
- 2492US6809370B1High-k gate dielectric with uniform nitrogen profile and methods for making the sameTEXAS INSTRUMENTS INC·Filed 2003·Granted Oct 26, 2004·81 cites·15 claims
- 2591US7148546B2MOS transistor gates with doped silicide and methods for making the sameTEXAS INSTRUMENTS INC·Filed 2003·Granted Dec 12, 2006·44 cites·5 claims
- 2691US6617250B2Methods of depositing a layer comprising tungsten and methods of forming a transistor gate lineMICRON TECHNOLOGY INC·Filed 2002·Granted Sep 9, 2003·38 cites·40 claims
- 2790US7612422B2Structure for dual work function metal gate electrodes by control of interface dipolesTEXAS INSTRUMENTS INC·Filed 2006·Granted Nov 3, 2009·19 cites·17 claims
- 2890US6979623B2Method for fabricating split gate transistor device having high-k dielectricsTEXAS INSTRUMENTS INC·Filed 2003·Granted Dec 27, 2005·52 cites·17 claims
- 2990US6090697AEtchstop for integrated circuitsTEXAS INSTRUMENTS INC·Filed 1998·Granted Jul 18, 2000·117 cites·16 claims
- 3090US5972722AAdhesion promoting sacrificial etch stop layer in advanced capacitor structuresTEXAS INSTRUMENTS INC·Filed 1998·Granted Oct 26, 1999·107 cites·11 claims
- 3189US7115530B2Top surface roughness reduction of high-k dielectric materials using plasma based processesTEXAS INSTRUMENTS INC·Filed 2003·Granted Oct 3, 2006·40 cites·24 claims
- 3287US8021990B2Gate structure and methodTEXAS INSTRUMENTS INC·Filed 2009·Granted Sep 20, 2011·11 cites·6 claims
- 3387US7045431B2Method for integrating high-k dielectrics in transistor devicesTEXAS INSTRUMENTS INC·Filed 2003·Granted May 16, 2006·42 cites·19 claims
- 3487US6482736B1Methods for forming and integrated circuit structures containing enhanced-surface-area conductive layersMICRON TECHNOLOGY INC·Filed 2000·Granted Nov 19, 2002·30 cites·5 claims
- 3586US7291890B2Gate dielectric and methodTEXAS INSTRUMENTS INC·Filed 2006·Granted Nov 6, 2007·9 cites·1 claims
- 3685US10249621B2Dummy contacts to mitigate plasma charging damage to gate dielectricsTEXAS INSTRUMENTS INC·Filed 2016·Granted Apr 2, 2019·5 cites·20 claims
- 3784US6833576B2Methods for forming and integrated circuit structures containing ruthenium and tungsten containing layersMICRON TECHNOLOGY INC·Filed 2001·Granted Dec 21, 2004·20 cites·13 claims
- 3883US8377790B2Method of fabricating an embedded polysilicon resistor and an embedded eFuse isolated from a substrateIBM·Filed 2011·Granted Feb 19, 2013·7 cites·22 claims
- 3981US7601577B2Work function control of metalsTEXAS INSTRUMENTS INC·Filed 2007·Granted Oct 13, 2009·7 cites·10 claims
- 4081US7470577B2Dual work function CMOS devices utilizing carbide based electrodesTEXAS INSTRUMENTS INC·Filed 2005·Granted Dec 30, 2008·7 cites·5 claims
- 4181US7291527B2Work function control of metalsTEXAS INSTRUMENTS INC·Filed 2005·Granted Nov 6, 2007·8 cites·7 claims
- 4281US6902939B2Integrated circuit and methodTEXAS INSTRUMENTS INC·Filed 2002·Granted Jun 7, 2005·18 cites·3 claims
- 4381US6159835AEncapsulated low resistance gate structure and method for forming sameTEXAS INSTRUMENTS INC·Filed 2000·Granted Dec 12, 2000·30 cites·2 claims
- 4480US6642094B2Complementary transistors having respective gates formed from a metal and a corresponding metal-silicideTEXAS INSTRUMENTS INC·Filed 2001·Granted Nov 4, 2003·26 cites·13 claims
- 4579US7361599B2Integrated circuit and methodTEXAS INSTRUMENTS INC·Filed 2005·Granted Apr 22, 2008·6 cites·5 claims
- 4679US6797599B2Gate structure and methodTEXAS INSTRUMENTS INC·Filed 2002·Granted Sep 28, 2004·20 cites·8 claims
- 4779US6211034B1Metal patterning with adhesive hardmask layerTEXAS INSTRUMENTS INC·Filed 1998·Granted Apr 3, 2001·55 cites·12 claims
- 4877US7812401B2MOS device and process having low resistance silicide interface using additional source/drain implantTEXAS INSTRUMENTS INC·Filed 2010·Granted Oct 12, 2010·3 cites·8 claims
- 4977US7528024B2Dual work function metal gate integration in semiconductor devicesTEXAS INSTRUMENTS INC·Filed 2004·Granted May 5, 2009·21 cites·15 claims
- 5077US6869877B2Integrated capacitors fabricated with conductive metal oxidesMICRON TECHNOLOGY INC·Filed 2002·Granted Mar 22, 2005·17 cites·21 claims
Showing the top 50 of 148 patent records by PatentIndex Score.
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