Inventor · disambiguated record
Francois Rieutord
Also filed as: RIEUTORD FRANCOIS · RIEUTORD FRANÇOIS
15 granted patents·4 pending applications·29 citations·filing 2003–2023
87Inventor score
Files withCOMMISSARIAT ENERGIE ATOMIQUE11SOITEC SILICON ON INSULATOR5BENEYTON REMI1LIBRALESSO LAURE1
Top patents by PatentIndex Score
19 records- 0179US8318586B2Nitrogen-plasma surface treatment in a direct bonding methodLIBRALESSO LAURE·Filed 2009·Granted Nov 27, 2012·17 cites·17 claims
- 0278US9576843B2Process for bonding in an atmosphere of a gas having a negative Joule-Thomson coefficientCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2013·Granted Feb 21, 2017·4 cites·17 claims
- 0377US8530331B2Process for assembling substrates with low-temperature heat treatmentsBENEYTON REMI·Filed 2011·Granted Sep 10, 2013·3 cites·31 claims
- 0474US9935019B2Method of fabricating a transistor channel structure with uniaxial strainCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2016·Granted Apr 3, 2018·2 cites·10 claims
- 0566US11670540B2Substrates including useful layersSOITEC SILICON ON INSULATOR·Filed 2021·Granted Jun 6, 2023·0 cites·18 claims
- 0666US10497609B2Method for direct bonding of substrates including thinning of the edges of at least one of the two substratesCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2016·Granted Dec 3, 2019·1 cites·10 claims
- 0762US9201023B2System for measuring a spacing zone in a substrateCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2013·Granted Dec 1, 2015·2 cites·16 claims
- 0858US2009162991A1Process for assembling substrates with low-temperature heat treatmentsCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2007·Application pending·0 cites
- 0954US2025137928A1Method for monitoring embrittlement of an interface between a substrate and layer and a device enabling such monitoringCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2023·Application pending·0 cites
- 1052US10950491B2Method for transferring a useful layerCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2017·Granted Mar 16, 2021·0 cites·18 claims
- 1151US7688946B2Method and device for measuring bond energyCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2005·Granted Mar 30, 2010·0 cites·18 claims
- 1250US12417942B2Process for hydrophilically bonding substratesCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2020·Granted Sep 16, 2025·0 cites·15 claims
- 1350US12002697B2Method for detecting the splitting of a substrate weakened by implanting atomic speciesSOITEC SILICON ON INSULATOR·Filed 2019·Granted Jun 4, 2024·0 cites·20 claims
- 1449US2024010491A1Method for manufacturing a structure comprising a plurality of membranes overlooking cavitiesSOITEC SILICON ON INSULATOR·Filed 2023·Application pending·0 cites
- 1548US11587826B2Method for suspending a thin layer on a cavity with a stiffening effect obtained by pressurizing the cavity by implanted speciesCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2021·Granted Feb 21, 2023·0 cites·20 claims
- 1644US12469743B2Method for preparing a thin layer that includes forming a weakened zone in a central portion of a donor substrate that does not extend into a peripheral portion of the donor substrate and initiating and propagating a splitting wave in the weakened zone that does completely not propagate through the peripheral portionSOITEC SILICON ON INSULATOR·Filed 2021·Granted Nov 11, 2025·0 cites·20 claims
- 1741US7702072B2X-Ray or neutron monochromatorCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2006·Granted Apr 20, 2010·0 cites·20 claims
- 1838US9589830B2Method for transferring a useful layerSOITEC SILICON ON INSULATOR·Filed 2015·Granted Mar 7, 2017·0 cites·21 claims
- 1929US2004035353A1Manufacturing of organized molecular monolayers and adapted substrateFiled 2003·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →