Inventor · disambiguated record
Frédéric Mazen
Also filed as: MAZEN FREDERIC · MAZEN FRÉDÉRIC
24 granted patents·8 pending applications·55 citations·filing 2003–2025
93Inventor score
Files withCOMMISSARIAT ENERGIE ATOMIQUE19SOITEC SILICON ON INSULATOR8COMMINSSARIAT A L EN ATOMIQUE1COMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALT1SIGNAMARCHEIX THOMAS1
Top patents by PatentIndex Score
32 records- 0183US9246006B2Recrystallization of source and drain blocks from aboveCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2014·Granted Jan 26, 2016·6 cites·7 claims
- 0282US9343375B2Method for manufacturing a transistor in which the strain applied to the channel is increasedCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2015·Granted May 17, 2016·4 cites·19 claims
- 0379US9966453B2Method for doping source and drain regions of a transistor by means of selective amorphisationCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2016·Granted May 8, 2018·3 cites·13 claims
- 0477US11195711B2Healing method before transfer of a semiconducting layerCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2020·Granted Dec 7, 2021·1 cites·16 claims
- 0575US9698289B2Detachment of a self-supporting layer of silicon <100>COMMISSARIAT ENERGIE ATOMIQUE·Filed 2013·Granted Jul 4, 2017·5 cites·14 claims
- 0675US9427948B2Manufacturing a flexible structure by transfers of layersCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2012·Granted Aug 30, 2016·4 cites·14 claims
- 0773US6946369B2Method for forming, by CVD, nanostructures of semi-conductor material of homogenous and controlled size on dielectric materialCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2003·Granted Sep 20, 2005·17 cites·23 claims
- 0871US9761607B2Method for producing strained semi-conductor blocks on the insulating layer of a semi-conductor on insulator substrateCOMMISSARIAT A L'ENERGIE ATOMIQUE ET AUX ENE ALT·Filed 2014·Granted Sep 12, 2017·2 cites·10 claims
- 0968US8778775B2Method for preparing thin GaN layers by implantation and recycling of a starting substrateTAUZIN AURÉLIE·Filed 2007·Granted Jul 15, 2014·6 cites·24 claims
- 1066US11670540B2Substrates including useful layersSOITEC SILICON ON INSULATOR·Filed 2021·Granted Jun 6, 2023·0 cites·18 claims
- 1165US9105688B2Process for forming a crack in a materialTAUZIN AURELIE·Filed 2012·Granted Aug 11, 2015·2 cites·15 claims
- 1262US9201023B2System for measuring a spacing zone in a substrateCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2013·Granted Dec 1, 2015·2 cites·16 claims
- 1361US7943402B2Ion implantation process characterization methodCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2010·Granted May 17, 2011·1 cites·12 claims
- 1460US8293620B2Method of making multiple implantations in a substrateSIGNAMARCHEIX THOMAS·Filed 2009·Granted Oct 23, 2012·2 cites·21 claims
- 1558US12327719B2Semiconductor substrate polishing methodCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2021·Granted Jun 10, 2025·0 cites·15 claims
- 1658US2025391702A1Method for oxidising a silicon layerCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2025·Application pending·0 cites
- 1754US2023193511A1Method for transferring a useful layer of crystalline diamond onto a supporting substrateCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2022·Application pending·0 cites
- 1854US2025137928A1Method for monitoring embrittlement of an interface between a substrate and layer and a device enabling such monitoringCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2023·Application pending·0 cites
- 1953US11769687B2Method for layer transfer with localised reduction of a capacity to initiate a fractureCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2020·Granted Sep 26, 2023·0 cites·12 claims
- 2052US10950491B2Method for transferring a useful layerCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2017·Granted Mar 16, 2021·0 cites·18 claims
- 2152US2025210410A1Method for transferring a thin film onto a support substrateSOITEC SILICON ON INSULATOR·Filed 2023·Application pending·0 cites
- 2252US2025201625A1Method for transferring a thin film onto a support substrateSOITEC SILICON ON INSULATOR·Filed 2022·Application pending·0 cites
- 2351US2025391704A1Method for transferring a thin layer onto a support substrateSOITEC SILICON ON INSULATOR·Filed 2022·Application pending·0 cites
- 2450US12002697B2Method for detecting the splitting of a substrate weakened by implanting atomic speciesSOITEC SILICON ON INSULATOR·Filed 2019·Granted Jun 4, 2024·0 cites·20 claims
- 2548US11587826B2Method for suspending a thin layer on a cavity with a stiffening effect obtained by pressurizing the cavity by implanted speciesCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2021·Granted Feb 21, 2023·0 cites·20 claims
- 2647US11056340B2Direct bonding processCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2018·Granted Jul 6, 2021·0 cites·14 claims
- 2744US12469743B2Method for preparing a thin layer that includes forming a weakened zone in a central portion of a donor substrate that does not extend into a peripheral portion of the donor substrate and initiating and propagating a splitting wave in the weakened zone that does completely not propagate through the peripheral portionSOITEC SILICON ON INSULATOR·Filed 2021·Granted Nov 11, 2025·0 cites·20 claims
- 2839US11189519B2Masking a zone at the edge of a donor substrate during an ion implantation stepSOITEC SILICON ON INSULATOR·Filed 2018·Granted Nov 30, 2021·0 cites·13 claims
- 2939US2007104888A1Method for the organised growth of nanostructuresCOMMINSSARIAT A L EN ATOMIQUE·Filed 2004·Application pending·0 cites
- 3038US9589830B2Method for transferring a useful layerSOITEC SILICON ON INSULATOR·Filed 2015·Granted Mar 7, 2017·0 cites·21 claims
- 3136US7736919B2Method of producing a light-emitting diode comprising a nanostructured PN junction and diode thus obtainedCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2006·Granted Jun 15, 2010·0 cites·13 claims
- 3231US2018315644A1Method of eliminating faults in a semiconductor film comprising the formation of a hydrogen trapping layerCOMMISSARIAT ENERGIE ATOMIQUE·Filed 2016·Application pending·0 cites
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →