Inventor · disambiguated record
Hideki Yasuoka
Also filed as: YASUOKA HIDEKI
21 granted patents·1 pending application·181 citations·filing 1983–2013
95Inventor score
Top patents by PatentIndex Score
22 records- 0183US7514749B2Semiconductor device and a method of manufacturing the sameRENESAS TECH CORP·Filed 2008·Granted Apr 7, 2009·9 cites·7 claims
- 0283US7391083B2Semiconductor device and a method of manufacturing the sameRENESAS TECH CORP·Filed 2006·Granted Jun 24, 2008·9 cites·10 claims
- 0381US6780717B2Semiconductor integrated circuit device and method of manufacturing the sameRENESAS TECH CORP·Filed 2001·Granted Aug 24, 2004·25 cites·38 claims
- 0478US7393737B2Semiconductor device and a method of manufacturing the sameRENESAS TECH CORP·Filed 2006·Granted Jul 1, 2008·6 cites·7 claims
- 0574US4529456AMethod of forming bifets by forming isolation regions connected by diffusion in semiconductor substrate and epitaxial layerHITACHI LTD·Filed 1983·Granted Jul 16, 1985·41 cites·11 claims
- 0671US8169047B2Semiconductor device comprising a schottky barrier diodeKATO KUNIHIKO·Filed 2008·Granted May 1, 2012·4 cites·10 claims
- 0765US7759763B2Semiconductor device and a method of manufacturing the sameRENESAS TECH CORP·Filed 2008·Granted Jul 20, 2010·2 cites·9 claims
- 0865US7259054B2Method of manufacturing a semiconductor device that includes a process for forming a high breakdown voltage field effect transistorRENESAS TECH CORP·Filed 2004·Granted Aug 21, 2007·11 cites·6 claims
- 0964US8324706B2Semiconductor device and a method of manufacturing the sameYOSHIZUMI KEIICHI·Filed 2010·Granted Dec 4, 2012·2 cites·25 claims
- 1062US8860169B2Semiconductor device comprising a Schottky barrier diodeRENESAS ELECTRONICS CORP·Filed 2013·Granted Oct 14, 2014·1 cites·9 claims
- 1160US5017996ASemiconductor device and production method thereofHITACHI LTD·Filed 1989·Granted May 21, 1991·18 cites·31 claims
- 1259US7592669B2Semiconductor device with MISFET that includes embedded insulating film arranged between source/drain regions and channelRENESAS TECH CORP·Filed 2007·Granted Sep 22, 2009·1 cites·10 claims
- 1355US5256893ASemiconductor integrated circuit device with power MOSFET incorporatedHITACHI LTD·Filed 1992·Granted Oct 26, 1993·17 cites·20 claims
- 1452US7790554B2Method of manufacturing semiconductor integrated circuit device with high and low breakdown-voltage MISFETsRENESAS TECH CORP·Filed 2009·Granted Sep 7, 2010·0 cites·6 claims
- 1552US6803644B2Semiconductor integrated circuit device and method of manufacturing the sameRENESAS TECH CORP·Filed 2001·Granted Oct 12, 2004·5 cites·20 claims
- 1651US7064090B2Method of manufacturing a semiconductor integrated circuit deviceHITACHI LTD·Filed 2004·Granted Jun 20, 2006·4 cites·24 claims
- 1751US4616405ASemiconductor device and manufacturing method thereofHITACHI LTD·Filed 1985·Granted Oct 14, 1986·13 cites·33 claims
- 1849US8604583B2Semiconductor device comprising a Schottky barrier diodeKATO KUNIHIKO·Filed 2012·Granted Dec 10, 2013·0 cites·12 claims
- 1948US7541661B2Semiconductor integrated circuit device with high and low breakdown-voltage MISFETsRENESAS TECH CORP·Filed 2006·Granted Jun 2, 2009·0 cites·23 claims
- 2046US7224037B2Semiconductor integrated circuit device with high and low breakdown-voltage MISFETsRENESAS TECH CORP·Filed 2004·Granted May 29, 2007·2 cites·21 claims
- 2139US4662057AMethod of manufacturing a semiconductor integrated circuit deviceHITACHI LTD·Filed 1985·Granted May 5, 1987·11 cites·9 claims
- 2236US2003104671A1Semiconductor integrated circuit device and method of manufacturing the sameHITACHI LTD·Filed 2002·Application pending·0 cites
Join the waitlist — get patent alerts
Get an alert when Hideki Yasuoka files or is granted a new patent.
We store only your email — no account needed. See our privacy policy.
Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →