Inventor · disambiguated record
Masami Koketsu
Also filed as: KOKETSU MASAMI
20 granted patents·67 citations·filing 2004–2017
94Inventor score
Files withRENESAS ELECTRONICS CORP8RENESAS TECH CORP6KATO KUNIHIKO2KOKETSU MASAMI2SYNAPTICS DISPLAY DEVICES GK1
Top patents by PatentIndex Score
20 records- 0189US8008788B2Semiconductor device and a method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2009·Granted Aug 30, 2011·11 cites·24 claims
- 0288US9536839B2Semiconductor device and a method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2015·Granted Jan 3, 2017·4 cites·20 claims
- 0383US10056336B2Semiconductor device and a method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2017·Granted Aug 21, 2018·2 cites·7 claims
- 0483US7514749B2Semiconductor device and a method of manufacturing the sameRENESAS TECH CORP·Filed 2008·Granted Apr 7, 2009·9 cites·7 claims
- 0583US7391083B2Semiconductor device and a method of manufacturing the sameRENESAS TECH CORP·Filed 2006·Granted Jun 24, 2008·9 cites·10 claims
- 0678US7393737B2Semiconductor device and a method of manufacturing the sameRENESAS TECH CORP·Filed 2006·Granted Jul 1, 2008·6 cites·7 claims
- 0774US8421250B2Semiconductor device and a method of manufacturing the sameKOKETSU MASAMI·Filed 2012·Granted Apr 16, 2013·2 cites·32 claims
- 0873US8314502B2Semiconductor device and a method of manufacturing the sameKOKETSU MASAMI·Filed 2011·Granted Nov 20, 2012·2 cites·24 claims
- 0971US8169047B2Semiconductor device comprising a schottky barrier diodeKATO KUNIHIKO·Filed 2008·Granted May 1, 2012·4 cites·10 claims
- 1065US7759763B2Semiconductor device and a method of manufacturing the sameRENESAS TECH CORP·Filed 2008·Granted Jul 20, 2010·2 cites·9 claims
- 1165US7259054B2Method of manufacturing a semiconductor device that includes a process for forming a high breakdown voltage field effect transistorRENESAS TECH CORP·Filed 2004·Granted Aug 21, 2007·11 cites·6 claims
- 1264US8324706B2Semiconductor device and a method of manufacturing the sameYOSHIZUMI KEIICHI·Filed 2010·Granted Dec 4, 2012·2 cites·25 claims
- 1362US8860169B2Semiconductor device comprising a Schottky barrier diodeRENESAS ELECTRONICS CORP·Filed 2013·Granted Oct 14, 2014·1 cites·9 claims
- 1460US9799609B2Semiconductor device and a method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2016·Granted Oct 24, 2017·0 cites·6 claims
- 1559US8952555B2Semiconductor device and a method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2013·Granted Feb 10, 2015·0 cites·11 claims
- 1659US7592669B2Semiconductor device with MISFET that includes embedded insulating film arranged between source/drain regions and channelRENESAS TECH CORP·Filed 2007·Granted Sep 22, 2009·1 cites·10 claims
- 1758US8633603B2Semiconductor device and a method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2013·Granted Jan 21, 2014·0 cites·15 claims
- 1857US9281291B2Semiconductor device and a method of manufacturing the sameRENESAS ELECTRONICS CORP·Filed 2015·Granted Mar 8, 2016·0 cites·8 claims
- 1957US9269672B2Semiconductor integrated device for display driveSYNAPTICS DISPLAY DEVICES GK·Filed 2014·Granted Feb 23, 2016·1 cites·20 claims
- 2049US8604583B2Semiconductor device comprising a Schottky barrier diodeKATO KUNIHIKO·Filed 2012·Granted Dec 10, 2013·0 cites·12 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →