Inventor · disambiguated record
Han-Guan Chew
Also filed as: CHEW HAN GUAN
12 granted patents·1 pending application·48 citations·filing 2008–2013
88Inventor score
Top patents by PatentIndex Score
13 records- 0191US8304831B2Method and apparatus of forming a gateZHU MING·Filed 2010·Granted Nov 6, 2012·15 cites·20 claims
- 0288US8835294B2Method for improving thermal stability of metal gateCHEW HAN-GUAN·Filed 2010·Granted Sep 16, 2014·10 cites·20 claims
- 0386US8304842B2Interconnection structure for N/P metal gatesCHEW HAN-GUAN·Filed 2010·Granted Nov 6, 2012·7 cites·20 claims
- 0480US8586428B2Interconnection structure for N/P metal gatesCHEW HAN-GUAN·Filed 2012·Granted Nov 19, 2013·4 cites·20 claims
- 0572US9105692B2Method of fabricating an interconnection structure in a CMOS comprising a step of forming a dummy electrodeTAIWAN SEMICONDUCTOR MFG·Filed 2013·Granted Aug 11, 2015·2 cites·21 claims
- 0672US8378428B2Metal gate structure of a semiconductor deviceTAIWAN SEMICONDUCTOR MFG·Filed 2010·Granted Feb 19, 2013·3 cites·20 claims
- 0767US8609484B2Method for forming high-K metal gate deviceTAO LEE-WEE·Filed 2009·Granted Dec 17, 2013·6 cites·20 claims
- 0855US8668833B2Method of forming a nanostructureCHEW HAN GUAN·Filed 2008·Granted Mar 11, 2014·1 cites·24 claims
- 0951US8415236B2Methods for reducing loading effects during film formationCHEW HAN GUAN·Filed 2009·Granted Apr 9, 2013·0 cites·20 claims
- 1048US8664079B2Method of fabricating semiconductor device by thinning hardmask layers on frontside and backside of substrateCHEW HAN-GUAN·Filed 2011·Granted Mar 4, 2014·0 cites·10 claims
- 1148US2010096695A1High stress filmCHARTERED SEMICONDUCTOR MFG·Filed 2008·Application pending·0 cites
- 1247US8143137B2Method of fabricating semiconductor device by thinning hardmask layers on frontside and backside of substrateCHEW HAN-GUAN·Filed 2010·Granted Mar 27, 2012·0 cites·7 claims
- 1341US9355874B2Silicon nitride etching in a single wafer apparatusYU WEIBO·Filed 2011·Granted May 31, 2016·0 cites·16 claims
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Identity basis: PatentsView inventor disambiguation (2025Q4-odp release). How scoring works →